InGaAs-GaAs quantum well laser
Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... Moreover, e-h energies as well as the valence and conduction bands are drawn in Fig. 7 as a function of QD size. The interesting result of this article is that QD size makes a nonlinear effect on recombination ...
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Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... conventional InGaAs material, the lattice-matched conditions for InGaNAs quantum well materials are determined from experimental results published in the ...of InGaAs QWs. It is shown that an ...
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Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... a laser-field, the exciton-phonon interaction leads to non-exponential pure-dephasing of the excitonic dipole, as observed in time-resolved four-wave mixing experiments ...strong laser, both dressed states ...
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Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... as well as through off-resonant coupling of excitons to nano-cavities[15, ...single InGaAs/GaAs QD under strong laser pumping at positive detuning with the driving laser to higher ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... High-growth-temperature GaAs spacer layers were used to sup- press the formation of threading dislocations ...external quantum ef fi ciency (EQE) was measured at room temperature and zero ...reference ...
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Exciton Dynamics in Stacked InGaAs/GaAs Quantum Rings Under Resonant Excitation
... ductor quantum nanostructures like quantum dots (QDs) and quantum rings (QRs) for the development of room temperature operating hetero-structure lasers and high-speed optoelectronic devices, the ...
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... Microlasers were optically pumped with the second harmonic of CW-operating YAG:Nd laser (λ = 532 nm, 10 to 200 mW). An excitation power can be varied down to sub-microwatt level using absorptive neutral density ...
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Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors
... self-assembled quantum dots 共QDs兲, their application to high performance optoelectronic devices, such as QD laser diodes and QD infrared photodetectors, have been successfully demon- ...the ...
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Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot in well structure
... a laser spot diameter of less than 100 μ ...the quantum dots are now in the high excitation power regime when the temperature-dependent experi- ments are ...
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Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots
... delity quantum logic operations will not be achieved by sim- ply using faster laser pulses, but by optimizing the coherent control scheme to minimize dephasing based upon an under- standing of a driven ...
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The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... the laser behaviors and it is found that for a self-assembled InGaAs-GaAs quantum dot Laser, the laser coverage factor increment can increases the laser threshold current, ...
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Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...
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InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... the quantum dot and wetting ...same laser (532 nm) intensity, stronger light emission indicates a larger amount of radiative ...the quantum dot and wetting layer states by electrons, which will ...
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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... The PR/PT spectra were measured using a double- monochromator system, as depicted in Fig. 1, which pro- vided better signal-to-noise ratios under measurement condi- tions (compared to the conventional use of a low-pass ...
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Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... by laser circular polarization (optically ex- cited holes rapidly lose their polarization during energy relaxation, while electrons maintain their spin resulting in optical orientation of dark excitons evidenced ...
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Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots
... 共 Received 27 November 2007; revised manuscript received 9 January 2008; published 6 March 2008 兲 Nuclear polarization dynamics are measured in the nuclear spin bistability regime in a single optically pumped ...
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Effects of an intense, high frequency laser field on bound states in Ga1 − xInx Ny As1 − y/GaAs double quantum well
... GaInNAs/GaAs quantum well (QW) lasers have been attracting significant scientific interest mainly due to their applications in 1.3- or 1.55-μm optical fiber communica- tion [6-12]. These lasers are ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... fiber laser pump [4], or the use of InAs/GaAs quantum dot based PCA wafers with compact semiconductor lasers fabricated from identical QD based superlattices [5], [6], have been ...InAs ...
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Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As2 and As4 sources
... It should be noted that the strong anisotropy in the (001) plane cannot be explained purely in terms of the in-plane elongated shape of the QR along the [ 110] direction which is normally up to about 30%. Other possible ...
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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... plex quantum-level system, composed by the QDs, WL, InGaAs embedding layer, and n-doped ...thick InGaAs MB on the substrate, we have achieved a strong suppression of the impact of the interface on ...
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