InGaAs/InGaAs
Chirped InGaAs quantum dot molecules for broadband applications
... All InGaAs QDM samples are grown on (001)-GaAs sub- strates by solid source molecular beam epitaxy (MBE). After oxide desorption at 610°C, 300-nm GaAs is grown at 580°C, followed by a QDM layer and 100-nm GaAs. ...
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Formation Mechanisms of InGaAs Nanowires Produced by a Solid Source Two Step Chemical Vapor Deposition
... Based on the highly magnified TEM images (Fig. 3a, b), two distinct morphologies are seen in the InGaAs NWs. Figure 3a demonstrates the NW has a smooth surface and a dark Au catalytic seed. The diameter of both ...
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Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
... with InGaAs and great avalanche breakdown characteristics; therefore, they are the suitable multi- plication layer materials of InGaAs APDs in the traditional ...
15
Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111)
... Both GaAs wafers (moderately n-doped, exactly oriented) and 400 nm thick In 0:5 Ga 0:5 As virtual substrates were used. The latter were grown in a separate Varian MBE system on 50 mm (2 inch) GaAs(111)A wafers. In 0:5 Ga ...
9
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... Optical properties and characteristics of charge carrier’s transport in quantum-dimensional heterostructures based on semiconductor III–V materials are widely studied by scientists in recent years [1]. Such an interest ...
7
Thermal effects in InGaAs/AlAsSb quantum-cascade lasers
... than InGaAs) [2] and thick gold layers electroplated on top of the laser ridge to help remove waste heat [3] as well as buried heterostructures [4] and epilayer down mounting [5], has led to several reports of ...
8
Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes
... the InGaAs absorption layer and the InAlAs multiplication layer, the ionization coefficients are more dissimilar in InGaAs ( at high multiplication factors), leading to lower associated excess noise, than ...
6
An InGaAlAs-InGaAs two-color photodetector for ratio thermometry
... From Fig. 5, it can be seen that the SNR values are similar for both sets of diode despite our diodes having much higher dark current than their commercial counterparts. This is attributed to the dominance of our ...
7
Aspects of the internal physics of InGaAs/InAlAs quantum cascade lasers
... of InGaAs/ InAlAs QCLs, our simulations including a self-consistent treatment of the subband population rate equations and ac- counting for all electron-longitudinal-optical phonon and electron-electron scattering ...
7
Strained GaAs/InGaAs Core Shell Nanowires for Photovoltaic Applications
... and a single GaAs NW PV device [10] with η ≈ 40 % have been reported, showing the real potential of NW solar cells to compete directly with other thin-film solar cell technologies. Another direction worth exploring for ...
7
An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown
... the pin and nip diodes compared [10]. An added benefit of incorporating AlAsSb is its very low excess noise corresponding to k 0:05 [13] in the local ionization model, where k represents the Beffective[ ionization ...
8
A Low Noise Op Amp Transimpedance Amplifier for InGaAs Photodetectors
... Photodiodes and InGaAs Photodiode convert optical signals into current signal. These signals are usually small in magnitude (nA to μA in LIDAR applications [1], FBG sensor applications [2]) and are commonly ...
5
Molecular beam epitaxy growth of peak wavelength controlled InGaAs/AlGaAs quantum wells for 4 3 μm mid wavelength infrared detection
... the InGaAs well finished for growing the whole AlGaAs ...the InGaAs well was grown, a thin 5-nm AlGaAs barrier was pre- deposited at the InGaAs growth temperature (500°C), and then the substrate ...
5
Self Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires
... the InGaAs nanowire with Xv of 35% is composed of a polytype of wurtzite (WZ) and zinc- blende (ZB) structures with a large number of stacking faults (SFs) along its growth direction, and due to the coexistence of ...
7
Theoretical Analysis of InGaAs/InAlAs Single Photon Avalanche Photodiodes
... the InGaAs/InAlAs SPADs are operated under the linear model (APDs), the electric field in the ab- sorption layer and multiplication layer increases linearly with increased bias ...with InGaAs/InAlAs APDs ...
8
InGaAs APD thermometry
... the InGaAs APD for use within aperture limited instrumentation, we integrated the InGaAs APD, with its PCB, glare stop and filter, into a micro- electro-mechanical systems (MEMS) mirror scanning ...the ...
10
Optimization of InGaAs/InAlAs Avalanche Photodiodes
... for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of ...
6
Integrated sensitive on chip ion field effect transistors based on wrinkled InGaAs nanomembranes
... The improved REBOLA technique uses small strained InGaAs membranes on mesa structures which allows for the exact on-chip placement of the nanochannels. In order to have an accurate and reproducible channel ...
8
Defect engineering of InP and InGaAs for optoelectronic applications
... When the conditions for dominant group V interdiffusion were created, as in the case for Si02 or undoped SOG treatment of the InGaAs capped quantum wells where a great deal of compressiv[r] ...
229
Dynamic vibronic coupling in InGaAs quantum dots
... self-assembled InGaAs quantum dots is relatively weak at low light intensities, which means that the zero-phonon line in emission is strong compared to the phonon ...
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