InGaAs(P)-InP
Optimization of MBE Growth Conditions of In 0.52 Al 0.48 As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
... The QCL structures used in these studies are based on 4-well 2-phonon resonance AR design described in [15]. The waveguide from the bottom side was formed by a low doped InP substrate and from the top by 2.5 μm ...
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The structural and optical properties of GaSb/InGaAs type II quantum dots grown on InP (100) substrate
... approximately 40 nm. The results indicate that the rectan- gular-shaped GaSb/InGaAs QDs are well developed in the SK growth mode, but no nanodash-like structures which are easily found in the InAs/InP QD ...
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Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s
... In this work we report anomalies observed on output characteristics of InAlAs / InGaAs HEMTs on InP substrate (degradation in drain current, Kink effect, Hysteresis effect, etc.). Defects analysis performed ...
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Controlling the optical properties of a laser pulse at λ = 1.55μm in InGaAs\InP double coupled quantum well nanostructure
... In Fig. 1 we consider a compact double coupled quantum well nanostructure which is fabricated using InGaAs/ InP nanostructures in material grown by an attractive growth technique i.e. organometallic vapor ...
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Self Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires
... of InGaAs/InP core – shell nanowires on Si – (111) substrates by metal-organic chemical vapor deposition ...the InGaAs core and InP shell materials has strong influence on the growth behavior ...
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Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
... the InGaAs, and the InAlAs reference samples, as well as an InP(100) substrate measured at 10 K with a laser inten- sity of ...confined InGaAs/InAlAs QW system and allows the discrete energy level to ...
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Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes
... Basic device characteristics like band diagram, dark and photo current I-V characteristic, gain, breakdown voltage, multiplication noise and gain-bandwidth product were evaluated. The [r] ...
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Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes
... Pre-irradiation transmission line measurement (TLM), dark J-V, and C-V measurements were taken before irradiation with an Agilent B1500 semiconductor analyzer. The contact resis- tances were characterized by TLM method ...
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Defect engineering of InP and InGaAs for optoelectronic applications
... When the conditions for dominant group V interdiffusion were created, as in the case for Si02 or undoped SOG treatment of the InGaAs capped quantum wells where a great deal of compressiv[r] ...
229
Formation Mechanism of Low Contact Resistance PdZn based Ohmic Contacts for p type InP
... Zn-doped p-InP substrates with no contact metallization before and after an- nealing were determined from the voltage dependence of the Schottky-contact capacitance, using a HCl solution as an elec- trolyte ...
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Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications
... the InP core and ...first InP to InGaAs (direct) interface is sharp while the second InGaAs-InP (inverted) interface is diffused compared to the ...in InGaAs-InP QWs grown ...
183
Radial tunnel diodes based on InP/InGaAs core shell nanowires
... valley current ratios (PVCR) up to 14 are observed in the forward bias region at room.. temperature.[r] ...
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Theoretical Analysis of InGaAs/InAlAs Single Photon Avalanche Photodiodes
... of InP-based SPADs are more compre- hensive [2, ...of InP-based APDs as they can improve performance both in APDs and SPADs ...in InP, thereby resulting in a low excess noise factor and high ...
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Optimization of InGaAs/InAlAs Avalanche Photodiodes
... Figure 1 shows the schematic cross-section of a top- illuminated SAGCM InGaAs/InAlAs APD with 400 μ m 2 mesa structure. From the top to the bottom, these layers are sequentially named as contact layer, window ...
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Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications
... compositional homogeneity. An increase in V/III ratio allows more Ga to be incorporated into the nanowires and at the same time increases the probability for ZB phase to nucleate. At high V/III ratio pure ZB phase of ...
182
Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes
... three InP APD designs considered the InP APD1 struc- ture has the highest field across the InGaAs ...three InP APD designs, calculated excluding ionization in the InGaAs layer, ...
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Testing read once formula satisfaction
... Given a property P , that is a set of objects P ⊆ Σ∗ , an integer q, and a farness parameter > 0, an -test for P with query complexity q is an algorithm that is allowed access to an inp[r] ...
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Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials
... Co/porous InP magnetic semiconductor nanocomposite based on electro- chemical deposition technique in ethanol solution of cobalt ...the InP templates, which is different from the “bottom-up” mechanism of ...
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Voltammetric Study and Determination of Phenylephrine Hydrochloride at INP-Nafion-Modified CPE Sensor Employing Differential Pulse Voltammetry
... the INP- Nafion-modified CPE by DPV, the peak currents of (n= 5) successive detections in a solution of 50 µM PHE was ...the INP-Nafion-modified CPE has good ...the INP-Nafion-modified CPE was also ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... High-growth-temperature GaAs spacer layers were used to sup- press the formation of threading dislocations [18,19]. The surface morphology of the solar cell samples was characterised by a Veeco Nanoscope V atomic force ...
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