InGaN/GaN multiple quantum wells
Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
... of InGaN/GaN multiple quantum wells (MQWs) grown by metal- organic vapor-phase epitaxy (MOVPE), epitaxial lateral overgrowth (ELO) on a patterned sapphire substrate was employed and the ...
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Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
... of InGaN/GaN multiple quantum wells ...and GaN result in the gener- ation of several kinds of defects, such as alloy disor- dering, misfit dislocations, and stacking faults, ...
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Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2 Grown GaN Barrier
... of InGaN layer [11, ...the quantum well (QW) can allevi- ate indium atom desorption to obtain high indium content, these methods also deteriorate the optical performance of InGaN/GaN ...
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Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... work, InGaN/GaN MQW LED struc- tures were deposited on crystalline silicon ...doped GaN or periodic Si δ-doped GaN working as n-type GaN layer was grown for ...n-type GaN layers, ...
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Temporally and spatially resolved photoluminescence investigation of (11(2)over-bar2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates
... Figure 1(a) gives the time-integrated PL (TIPL) spectra of all samples measured under identical conditions at 7 K, showing that the peak emission wavelength increases from 425 to 505 nm with increasing the indium ...
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Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
... example, the measured PL decay curves may deviate from single-exponential decay. It is worth noted that neither shallow nor deep localized states are located in single energy level but have certain distribution with a ...
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Reduction of Polarization Field Strength in Fully Strained c Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD
... thickness of our QWs is larger than the reported critical layer thickness of InGaN, the averaged composition is far below. As is shown in Fig. 5, there is no sign of lattice relaxation in all the samples measured. ...
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Phosphor Free Apple White LEDs with Embedded Indium Rich Nanostructures Grown on Strain Relaxed Nano epitaxy GaN
... 2]. InGaN/GaN, multiple quantum wells (MQWs) are often employed as the active layers due to their relatively high recombination efficiency and blue to green III-Nitride LEDs are com- ...
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Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects
... of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral ...
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Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing
... InGaN/GaN multiple quantum wells (MQWs) are the basis of many modern optoelectronic devices, including bright light emitting diodes, laser diodes, light displays, solar cells, ...
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Finite-Difference Time-Domain Simulations on Overgrown InGaN/GaN Multiple Quantum Well (MQW) Light Emitting Diode (LED).
... on GaN (wurtzite) nanostructures because the facets of GaN nanostructures expose their semi-polar and non-polar planes for the active layer ...Specifically, InGaN/GaN multiple ...
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Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures
... Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural, and elec- trical properties ...
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Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells
... Figure 7 shows the calculated near field pattern of the magnetic field component (in dB) along the vertical axis of the nanorods at a point 250 nm above the SQW for the cases of (a) air, (b) SiO 2 and (c) Si 3 N 4 filling ...
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Effect of electric and magnetic fields on impurity binding energy in zinc-blend symmetric InGaN/GaN multiple quantum dots
... confined quantum systems has been the interesting subject of investigation since the beginning of quantum ...confined quantum systems such as quantum wells, wires, and dots, has ...
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Intersubband absorption properties of high Al content Alx Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
... reported by several groups in AlGaN/GaN MQW struc- tures [4-7] and coupled QWs [8]; ISB absorption at tele- communication wavelengths has also been observed at room temperature in self-organized GaN/AlN ...
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Electronic and Photonic Band Engineering for Novel Optoelectronic and Nanophotonic Devices
... in GaN, AlN and their compounds results in a low intrinsic carrier density which in turn leads to low voltage and low dark current, especially important for photodetectors and high-temperature elec- ...
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Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
... CL hyperspectral imaging and Monte Carlo simulations of the electron excitation volume have been performed on an InGaN SQD embedded in GaN nanorods formed by post- growth nanoimprint lithography and ICP ...
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Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni Au bi metal catalysts
... the InGaN layers in our CVD sys- tem. For this study, the InGaN shell is deposited to a thickness of 50 nm on the GaN nanowires for the con- venience of the compositional analysis of the shell by TEM ...
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InGaN/GaN multilayer quantum dots yellow green light emitting diode with optimized GaN barriers
... as InGaN quantum dots (QDs) grown as the alternative active region [13,14] and InGaN QWs grown on nonpolar or semipolar planes ...In-content InGaN quantum dots using a growth interrup- ...
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Quantum well engineering in InGaN/GaN core-shell nanorod structures
... using three-pixel wide linescans, which are highlighted in figure 1. The resulting CL intensity profiles are shown in fig- ure 2. Specific regions on the nanorods were selected using a cursor three pixels in diameter, ...
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