InGaN-GaN quantum well samples
Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... work, InGaN/GaN MQW LED struc- tures were deposited on crystalline silicon ...doped GaN or periodic Si δ-doped GaN working as n-type GaN layer was grown for ...control samples ...
7
Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
... current samples are governed by trench defects of more diverse types, each having a different impact on the ...current samples also show narrower trench loops (labelled ‘2’, ‘4’, and ‘5’), which show a ...
7
InGaN/GaN multilayer quantum dots yellow green light emitting diode with optimized GaN barriers
... 1.5-nm GaN capping layer was grown in period III, whose growth parameters are the same with the growth carrier gas and temperature of InGaN ...The InGaN QD growth temperature is lower than that of ...
8
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
... The InGaN/GaN blue emission MQW structures were grown on (0001) planar sapphire substrates by metal- organic chemical vapor deposition ...undoped GaN layer, and six pairs of InGaN/GaN ...
7
The effect of free standing GaN substrate on carrier localization in ultraviolet InGaN light emitting diodes
... strained GaN epilayer and the strain-free GaN epi- layer and C is the biaxial strain co-efficient, which is ...sapphire samples, the UV-LEDs on FS-GaN showed a quite uniform Raman peak ...
7
InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates
... nonpolar GaN substrates, reduced (relative to c-plane LEDs) or negligible blue-shift with increased drive currents is one of the most common observations leading to the claim that the internal field is ...control ...
116
Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure
... HTHP-1000 samples, consequently, the BB can be attributed to a free-exciton transition in the InGaN/GaN QW ...both samples, a slope of ...in GaN accordingly with the aforementioned ...
7
Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures
... of GaN microrods in a regular array. GaN over- growth begins from the sidewalls of the microrods, along the [0001] direction and the ½11 20 ...of InGaN/ GaN QWs, and was finished with a 150 nm ...
6
Selective area epitaxy of ultra high density InGaN quantum dots by diblock copolymer lithography
... uniform InGaN-based QDs on the nano-pat- terned GaN template realized by diblock copolymer ...on GaN templates grown on c- plane sapphire ...are well controlled, and the presence of the ...
10
Quantum well engineering in InGaN/GaN core-shell nanorod structures
... the samples were investigated using an FEI Quanta 250 FEG scanning electron microscope, modified to capture room temperature cathodoluminescence (CL) spectra as well as a range of other information ...
7
Evolution of the m-plane quantum well morphology and composition within a GaN/InGaN core–shell structure
... min InGaN uncapped sample (Figure 4d) reveals a clear delineation between the initial 2D InGaN layer having a thickness of 50 nm and the 3D striated features, in good correlation with TEM (Figure ...2D ...
9
Phosphor Free Apple White LEDs with Embedded Indium Rich Nanostructures Grown on Strain Relaxed Nano epitaxy GaN
... from InGaN/GaN multiple quantum wells (MQWs) grown on different GaN templates and to achieve enhanced indium incorporation in the InGaN nanostructures embedded in the well layer, ...
7
Enhanced Light Emission due to Formation of Semi polar InGaN/GaN Multi quantum Wells
... The sample ’ s microstructure properties are measured by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The electron and hole quantized energy levels and wave functions of the two kinds of QWs ...
6
Reversed Effects of Quantum Well Numbers and Temperature on Optical Power and Wavelength of a Designed Ultraviolet Semiconductor Laser Based on GaN/InGaN
... in quantum well numbers more than a limited number in semiconductor lasers with p-n junction (laser diodes) leads to some undesirable results such as optical power reduction and rise in threshold ...in ...
6
InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Grown on Polar, Semi-polar and Non-Polar Orientations.
... the two cases of positions of the dipole source previously mentioned. In the first case shown in fig. 4-17(b), it can be seen that the electric field intensity is quite high within the waveguide just below the dipole ...
177
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
... of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy ...Various GaN gratings are defined by electron beam lithography and realized on GaN-on- silicon ...
7
Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
... of InGaN/GaN multiple quantum wells (MQWs) grown by metal- organic vapor-phase epitaxy (MOVPE), epitaxial lateral overgrowth (ELO) on a patterned sapphire substrate was employed and the MQWs were ...
6
Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells
... The PL intensity falls with diameter as the volume of the emissive material decreases, tending to saturate when the nanorod diameter is 100 nm, indicating that the external quantum efficiency has increased. The ...
5
Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
... include well width fluctuations in the ...the well/barrier ...wider well when compared to systems with a narrower well ...wider well when compared to the narrower ...the ...
24
Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
... unpassivated samples taken from the same etched nanorod wafer were simultaneously regrown for either 30 or 60 min, giving an increase in diameter of approximately 20% and 30%, ...unpassivated samples, ...
11