InGaN-GaN quantum-well structures
Quantum well engineering in InGaN/GaN core-shell nanorod structures
... using three-pixel wide linescans, which are highlighted in figure 1. The resulting CL intensity profiles are shown in fig- ure 2. Specific regions on the nanorods were selected using a cursor three pixels in diameter, ...
7
Study of GaN-based Materials for Light-emitting Applications
... the quantum-confined Stark effect (QCSE) [22], and is quite beneficial to LED structures because it allows InGaN-based structures to achieve longer emission wavelengths than would be possible ...
198
Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures
... of GaN near ...and GaN emission intensity maps are shown in ...the GaN emission. The GaN has pronounced stripes of high and low intensity perpendicular to the chev- ron, which are not so ...
6
InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates
... between GaN and sapphire, the main substrate for commercial LEDs, is 13% ...emissions, InGaN QWs’ immunity to the structural defects drew much research attention in the last ...as quantum dot ...
116
Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
... between InGaN/GaN and GaN/AlGaN wells. While in InGaN/GaN heterostructures in general the overall polarization vector field is dominated by piezoelectric effects, in GaN/AlGaN ...
24
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
... epitaxial structures on the 700-nm-period GaN gratings with the grating width W of approximately 500, approximately 350, and approxi- mately 250-nm, ...unpatterned GaN substrate, grating ...
7
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
... The InGaN/GaN blue emission MQW structures were grown on (0001) planar sapphire substrates by metal- organic chemical vapor deposition ...undoped GaN layer, and six pairs of ...
7
Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... multiple quantum well (MQW) structures grown on silicon substrates instead on conventional sapphire have attracted growing attentions for their po- tential applications in low-cost solid-state ...
7
Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure
... (b)] InGaN/ GaN QW ...the GaN bandgap (325 nm) with the Xe lamp coupled with a monochromator, similarly to the results obtained using the He-Cd laser (Figs 1 and 2), the YB and BB emissions are ...
7
Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells
... In order to distinguish between these two possibilities nanorods containing only a SQW were fabricated in much the same way, apart from using ICP etch conditions optimised to form almost vertically sided ...
5
Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
... the InGaN well, keeping the other conditions exactly the ...the InGaN well, the indium content of which was approximately 10%, was stronger compared with that on the unmasked ...the ...
6
InGaN/GaN Multiple Quantum Well Light-Emitting Diodes Grown on Polar, Semi-polar and Non-Polar Orientations.
... the GaN NWs to a structure after annealing and few minutes of ...The GaN NWs broaden in diameter and reduce in number as seen in the SEM image of ...the GaN NWs look to reduce their large surface ...
177
Finite-Difference Time-Domain Simulations on Overgrown InGaN/GaN Multiple Quantum Well (MQW) Light Emitting Diode (LED).
... Perhaps one of the frequent tasks performed using this software package is to compute the transmission or scattering spectra from a finite arbitrary structure in response to some stimulus as a function of input ...
86
Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers
... the InGaN/GaN MQW layer is usually performed at a reactor temperature as low as 800850 C because of the low sticking coefficient of In atoms at high growth ...the InGaN and GaN crystals ...
5
The effect of free standing GaN substrate on carrier localization in ultraviolet InGaN light emitting diodes
... the quantum- dot-like structures in traditional InGaN/AlGaN MQWs could be responsible for the surprisingly high quantum efficiencies ...of InGaN/AlGaN will procure the formation of ...
7
Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
... high-aspect-ratio GaN nano- rods is an essential first step in the growth and fabrication of a broad range of devices such as GaN/InGaN core-shell light-emitting diodes, 1–6 solar-cells, 7 and ...
11
Electronic and Photonic Band Engineering for Novel Optoelectronic and Nanophotonic Devices
... wurtzite InGaN/GaN- based quantum-well structures are calculated based on the Rashba-Sheka-Pikus (RSP) Hamiltonian in the vicinity of the Γ point since the simple parabolic model is ...
115
Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
... the well-known V-pits are observed, which act as centres for non-radiative recombination and therefore appear as dark spots in the CL intensity ...the GaN–sapphire ...
7
Phosphor Free Apple White LEDs with Embedded Indium Rich Nanostructures Grown on Strain Relaxed Nano epitaxy GaN
... from InGaN/GaN multiple quantum wells (MQWs) grown on different GaN templates and to achieve enhanced indium incorporation in the InGaN nanostructures embedded in the well layer, ...
7
InGaN/GaN multilayer quantum dots yellow green light emitting diode with optimized GaN barriers
... the well-known ‘green gap’ ...internal quantum efficiency (IQE) of InGaN/GaN multi-quantum wells (MQWs) with high indium ...between InGaN and GaN act as nonradiative ...
8