• No results found

ion implantation-induced defects

Ion Implantation Induced Martensite Nucleation in SUS301 Steel

Ion Implantation Induced Martensite Nucleation in SUS301 Steel

... the induced phase was different depending on ion ...and defects calculated by TRIM code in the ...the induced martensite phases observed were not coincident with those calculated (see ...

7

Ion Radiation Detection Using Implanted Ultrahigh Molecular Weight Polyethylene Structures (UHMWPE)

Ion Radiation Detection Using Implanted Ultrahigh Molecular Weight Polyethylene Structures (UHMWPE)

... after ion implantation for UHMWPE samples with a thickness of 1 ...the ion dose, a consequent enhancement in the intensity of the absorption was ...The implantation induced alteration ...

13

Formation of Anomalous Defect Structure on GaSb Surface
by Low Temperature Sn Ion Implantation*

Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion Implantation*

... similar defects which have been observed in ion-implanted ...the implantation induced point defects is ...of implantation. The point defects created on the hills do not ...

7

New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro  and Nanoelectronic Devices

New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro and Nanoelectronic Devices

... charged defects start discharging na- ...of defects can be used for characterization of charge carrier traps in micro and nanoelectronic ...the defects or ...

7

The ion implantation induced properties of one dimensional nanomaterials

The ion implantation induced properties of one dimensional nanomaterials

... Damages induced by ion implantation in an irradiated material are very different; they are related to the ion species, energy, fluences, beam current, and target ma- ...the implantation ...

13

Optimization of Manufacturing of Operational Amplifier Manufactured by Using Field effect Heterotransistor to Decrease Their Dimensions

Optimization of Manufacturing of Operational Amplifier Manufactured by Using Field effect Heterotransistor to Decrease Their Dimensions

... and ion types of doping, ...radiation defects after ion ...radiation defects, it is practicably to additionally anneal the ...time ion type of doping gives us possibility to decrease ...

11

Investigation of defects formed by ion implantation of H2+ into silicon

Investigation of defects formed by ion implantation of H2+ into silicon

... electronic defects induced by ion implantation, including hydrogen decorated monovacancies and hydrogen decorated ...point defects were analyzed using Multiple Internal Transmission ...

120

Continuous and Localized Mn Implantation of ZnO

Continuous and Localized Mn Implantation of ZnO

... of defects and vacancies are key factors for the magnetic behavior of doped ZnO [3, ...Zn defects, the last ones detected by RBS, induced by the ion implantation process in ZnO, plays ...

10

A preparation approach of exploring cluster ion implantation: from ultra thin carbon film to graphene

A preparation approach of exploring cluster ion implantation: from ultra thin carbon film to graphene

... by ion implantation consisting of different cluster sizes at 20 ...and defects in the structures performing sp 3 hybridization of carbon atoms, while sp 2 hybridization induced by the in- plan ...

6

Defects and gas sensing properties of carbon nanotube-based devices

Defects and gas sensing properties of carbon nanotube-based devices

... et al., 2014; Scuderi et al., 2012a), as reported in the scanning electron microscopy (SEM) image in Fig. 1a and b. In Fig. 1c and d, transmission electron microscopy (TEM) images are reported for both kinds of ...

6

Tantalum/ Nitrogen and n-type WO3 semiconductor/FTO structures as a cathode for the future of nano devices

Tantalum/ Nitrogen and n-type WO3 semiconductor/FTO structures as a cathode for the future of nano devices

... Moreover, TaN can also be manipulated in a spacious variety of applications such as corrosion- resistant materials and high-speed thermal printing head as well as thin film resistors. While Tantalum nitride deposition ...

11

Channeling in Semiconductors and its Application to the Study of Ion Implantation

Channeling in Semiconductors and its Application to the Study of Ion Implantation

... The influence of channeling on particle trajectories is most strikingly observed in the significant reduction in the energy loss of the particles passing through [r] ...

119

Ion-implantation and analysis for doped silicon slot waveguides

Ion-implantation and analysis for doped silicon slot waveguides

... uses ion implantation in both the fabrication and analysis of erbium-doped slot waveguides, including anneals at different temperatures to investigate the evo- lution of erbium ...

5

Surface Property Modification of Polylactic Acid by Ion Implantation

Surface Property Modification of Polylactic Acid by Ion Implantation

... acid surfaces causes surface roughness and an increase in contact angle, and, in turn, the increased.. 44.[r] ...

10

Size evolution of ion beam synthesized Pb nanoparticles in Al

Size evolution of ion beam synthesized Pb nanoparticles in Al

... fluence implantation of an insoluble elem- ent in a crystalline matrix proved to be suitable in obtaining NP-based ...during implantation and subsequent annealing is one of the challenging issues of this ...

7

Electrochemical Deposition of Calcium Phosphate/Chitosan/Gentamicin on a Titanium Alloy for Bone Tissue Healing

Electrochemical Deposition of Calcium Phosphate/Chitosan/Gentamicin on a Titanium Alloy for Bone Tissue Healing

... Figure 4 shows the in vitro cumulative release of gentamicin from our developed film with varying feed ratios of CS to gentamicin over a range of 1.0:1.0 to 3.0:10. The corresponding release profile exhibited three ...

9

Chemical Modification of Titanium Nitride Films via Ion Implantation

Chemical Modification of Titanium Nitride Films via Ion Implantation

... is induced when the implanted materials are subjected to severe ...to ion implantation to accommo- date the self-protection of original matrix materials and the self-lubrication of contact ...

9

Ion processing apparatus including plasma ion source and mass spectrometer for ion deposition, ion implantation, or isotope separation

Ion processing apparatus including plasma ion source and mass spectrometer for ion deposition, ion implantation, or isotope separation

... plasma ion source is preferably an inductively coupled plasma ion source, and the mass spectrometer is preferably a quadrupole mass ...an ion beam having a desired ...plasma ion source and ...

9

Radiation Enhanced Diffusion of Nickel in Silicon Diodes

Radiation Enhanced Diffusion of Nickel in Silicon Diodes

... It has been shown, that the classical diffusion of the nickel has a smaller influence on the carrier lifetime in a power diode than that of the palladium and platinum. The Radiation Enhanced Diffusion of the nickel was ...

7

Ion Implantation As A Route To Enhancing Osseointegration On Modified Titanium Surfaces

Ion Implantation As A Route To Enhancing Osseointegration On Modified Titanium Surfaces

... during implantation has been shown to remove the thin oxide film leading to a Ti implantation substrate, which is rapidly re­ oxidised upon removal from the implanter UHV ...

395

Show all 10000 documents...

Related subjects