Metal Silicide
Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles
... ding metal silicide nanoparticles into an ultrathin a-Si film ...that silicide films exhibit high absorption co- efficient in the range of 5 × 10 5 –10 × 10 5 cm −1 in the vis- ible light region, ...
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Formation of Metal Silicide and Metal Germanosilicide Contacts to Si[subscript 1-x]subscript Ge[subscript x] Alloys
... of metal silicide and metal germanosilicide thin films on both Si and Si Ge 1 − x x has been extensively ...these metal silicide and germanosilicide compounds on Si Ge 1 − x x ...
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Novel Metal Silicide Thin Films by Design via Controlled Solid-State Diffusion
... and PtSi films. These two routes to adjust the silicide stoi- chiometry, crystal structure and properties will also be applicable to other metal silicides (e.g. Ti, Ni, W, Co, Mo, and Cr silicides) and may ...
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Metal silicide/poly Si Schottky diodes for uncooled microbolometers
... However, we attribute all the above barriers to the Ni silicide/poly-Si interface. Our reasoning is as follows. The band structure of a polysilicon film is known to be spatially inhomogeneous: A strong potential ...
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Electrical Characterization of Transition Metal Silicide Nanostructures Using Variable Temperature Scanning Probe Microscopy
... Also essential for achieving atomic resolution is a high quality vibration isolation system [8-9]. Initially, vibration isolation was achieved using magnetic levitation of a superconducting bowl cooled by liquid helium ...
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Corrosion Behavior of Mo5Si3-Based Metal Silicide Alloy
... Although the austenitic stainless steel has a wide passivation region, the present alloy has considerably higher corrosion potential and much lower corrosion current density compared wit[r] ...
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Synthesis of silicide nanomaterials using chemical vapour deposition method
... transition metal silicide NWs by silicidation of silicon nanowires ...in silicide NW formation, material delivery and 1-D anisotropic growth, were overcome independently using this ...
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Ultra low silicon substrate noise crosstalk using metal Faraday cages in a silicon on insulator technology
... buried metal ground plane, metal-lined trenches, and layers beneath buried oxide layer) so as to act as a control to which the other structures could be com- ...buried metal silicide ground ...
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The Ratio Growth In Profile Of Cobalt Silicide And Titanium Silicide And The Effect Of Them On Electrical Characterization For Nano Nmos Devices
... temperature metal such as tungsten, titanium, cobalt, and more recently nickel, is alloyed with the top layers of the ...called silicide. The silicide-polysilicon combination has better electrical ...
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Application of Taguchi Method in Optimization of Gate Oxide and Silicide Thickness for 45nm NMOS Device
... of metal silicide in integrated circuits as a contact material has been widely ...This metal reacts with polysilicon to form the metal silicide layer that posses better physical and ...
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Anode Properties of Composite Thick-Film Electrodes Consisted of Si and Various Metal Silicides
... composite silicide powder was studied by using an X-ray diffractometer (XRD-6000 Shimadzu ...composite metal silicide powders under a uniaxial press of 55 MPa using a two probes method in Ar ...
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Microstructure and composition evolution of a fused slurry silicide coating on MoNbTaTiW refractory high-entropy alloy in high-temperature oxidation environment
... and silicide layers, as shown in ...and silicide layers, though there are also many holes and cracks were formed in the silicide ...other metal elements, but no oxides of Mo and Ta were ...the ...
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Carbon or boron modified titanium silicide
... A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 ...
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Silicide formation and the interaction of metals with polycrystalline Si
... Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of crsi [r] ...
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Electrical properties of magnesium silicide and magnesium germanide
... Extensive room temperature measurements lead to the conclusion that the high resistivity region of the sample was homogeneous with respect to charge carrier density to within about 10 pe[r] ...
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Development of nickel silicide for integrated circuit technology
... Phu Do MS Thesis List Tables of Table Description 2.1 Desired Properties 2.2 Comparison 2.3 Phase Formation Temperature 2.4 Crystal Parameters 2.5 Mechanical Properties 2.6 Electrical Pr[r] ...
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Crystal structure of the ternary silicide Gd2Re3Si5
... Crystal structure of the ternary silicide Gd2Re3Si5 Vitaliia Fedyna, Roksolana Kozak and Roman Gladyshevskii Computing details Data collection: CrysAlis PRO Agilent, 2012; cell refinemen[r] ...
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Carbon or boron modified titanium silicide
... A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 ...
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Carbon or boron modified titanium silicide
... A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 ...
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Boron modified molybdenum silicide and products
... molybdenum silicide material having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about ...molybdenum silicide material is fabricated into such products ...
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