minority carrier lifetime measurements
Competitive gettering of iron in silicon photovoltaics : oxide precipitates versus phosphorus diffusion
... Injection-dependent minority carrier lifetime measurements are analysed to provide quantitative information on the degree to which the precipitates and associated defects are decorated with ...
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Defect and Impurity Distributions in Traditionally Cast Multicrystalline and Cast Monocrystalline Silicon for Solar Substrates
... reduced minority carrier lifetimes and diffusion lengths, two measurements that relate to how well free charge carriers can reach solar cell ...2005). Minority carrier lifetime ...
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Minority carrier lifetime in silicon photovoltaics : the effect of oxygen precipitation
... injection-dependent minority carrier lifetime measurements to give a full parameterisation of the recombination activity in terms of Shockley–Read–Hall ...
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Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cell
... the lifetime of commercially manufactured FZ ...bulk lifetime after heat treatments at moderate tem- peratures (450 ‐ ...bulk lifetime against future thermal ...the carrier lifetime. ...
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Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma enhanced atom layer deposition
... effective minority carrier lifetime were ...conductance-voltage measurements were used to investigate the interface defect density of state ( D it ) of Al 2 O 3 ...
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Silicon Ingot Characterization using Photoconductance Lifetime Techniques
... imaging measurements to eliminate the reflected signal while capturing the significantly weaker luminescence ...high-resolution minority carrier lifetime images on passivated silicon wafers ...
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Increasing minority carrier lifetime in as grown multicrystalline silicon by low temperature internal gettering
... local minority carrier ...bulk lifetime measurements in Figure 3(a), with the average PL intensity lowest at the bottom of the ingot, highest in the middle, and somewhere in between at the ...
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... the minority carrier lifetime in silicon by the photoconductive decay method using as the light source the Holobeam Model 655 Double-Pulsed Holographic system, which consists of a Q-switched, pulsed ...
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Electrical Characterization of Continuous-Czochralski Grown Silicon for Photovoltaic Applications.
... the carrier concentration behaves in a steady-state manner as long as the time constant of the flash lamp is larger than the carrier ...excess carrier concentration continuously measured by the ...
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The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity n-type Silicon.
... The detrimental effects and electrical properties of transition-metal impurities, e.g., iron, and its complexes, such as FeB, in p-type silicon are well-known [1]. However, in n-type silicon wafers, the impact of ...
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The effect of oxide precipitates on minority carrier lifetime in n type silicon
... ity carrier lifetime in p-type silicon than in n-type ...photovoltage measurements were made at low injection and hence this conclusion about doping type and lifetime is only valid at ...
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Minority carrier lifetime in indium doped silicon for photovoltaics
... the minority carrier life- time (henceforth just “ lifetime ” ) in indium doped silicon for PV appli- ...effect measurements to determine the concentration of ionized indium, and make ...
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Optical and Other Measurement Techniques of Carrier Lifetime in Semiconductors
... charge carrier lifetime are reviewed and an optical technique is described in ...upon measurements of free carrier absorption transients by an infrared probe beam following electron-hole pair ...
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CatingSubramanian_unc_0153D_18146.pdf
... recombination lifetime or diffusion length of photogenerated charge carriers; however, it significantly impacts the thermal relaxation properties of the ...
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Low temperature gettering in multicrystalline silicon materials for photovoltaics
... improving minority carrier lifetime in multicrystalline silicon materials without incorporating an additional layer on the surface and explicitly gettering at defective regions in the bulk material ...
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Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium
... 2DHG carrier density in biaxial strained Ge QW is isotropic at low temperatures, whereas the resistivity of the quantum well exhibits ...quantum carrier lifetimes increase by a factor of approximately ...
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Micro spectroscopy on silicon wafers and solar cells
... the carrier diffusion length has to be in the order of the spatial resolution or ...Shockley-Read-Hall lifetime by μPLS is to measure the depth profile of the injection density and to compare the ...
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Advanced surface texturing for silicon solar cells
... However, the minority carrier lifetime results reported in Chapter 4 showed that oxygen less SF6 plasma texturing also causes significant defects in silicon substrates and results in a d[r] ...
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Optimization of the Surface Structure on Black Silicon for Surface Passivation
... minority carrier lifetime of polished wafer was only 10 μs before annealing, and increased to 413 μs ...effective minority carrier ...effective minority carrier ...
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Combining low temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon
... the lifetime have been demonstrated [1], ...gives lifetime improvements of >40% in relatively low lifetime samples from the top and bottom of the ...
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