n-GaAs
Spin Injection, Transport, and Detection in a Lateral Spin Transport Devices with Co2FeAl0 5Si0 5/n GaAs, Co2FeSi/MgO/n Si, and CoFe/MgO/n Si Junctions
... To investigate the spin injection/detection efficiency from CFAS to n-GaAs, we also performed 4T nonlocal Hanle mea- surements. Figure 4 shows magnetoresistance curve for four terminal nonlocal Hanle ...
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Electroluminescence on off ratio control off n−i−n GaAs/AlGaAs based resonant tunneling structures
... bulk GaAs and the QW ...the GaAs layer after the double barrier is enhanced due to a high electric field in this region, leaving less electrons available to reach the AlGaAs layer with energies above the ...
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Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes
... Schottky diodes are the basic building component in many semiconductor devices (field effect transistors, solar cells, photodetectors, Gunn diodes, microwave diodes, etc...) and integrated circuits, hence the intense ...
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ABSTRACTS: July 1992165-171
... The reduction in the contact resistivity is explained by formation of a n + GaAs surface layer via solid-phase regrowth. The modified contacts show uniform surface a[r] ...
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Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures
... perature, relative to the lattice temperature, will start to open this channel of heat dissipation into the lattice—but this need not be excessive, because the electrical power input is still small. At larger biases, ...
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Subject Index To Volume 42187-192
... Pd/Co multilayer thin films, magnetic properties, a PdGaN Schottky diode, a. Pd/Ge/Pd interlayers, between n-GaAs and Si, a Pd/Pt/AdPd ohmic contacts, a[r] ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were ...grown n + ...
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Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode
... p-i- n diode was determined to exhibit a threshold voltage of ...Ti-Au/n-type GaAs Schottky diode is required for the determination of dominant current conduction mechanism and nature of barrier ...
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n Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
... on n -GaAs is known to be challenging specially at low annealing temperatures due to the already mentioned Fermi level pinning and high density of surface states ...high-doped n-GaAs ...given ...
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Nano structure fabrication of GaAs using AFM tip induced local oxidation method: different doping types and plane orientations
... plane orientations. The loading forces are changed from 60 to 180 nN. It can be seen that the oxide height almost linearly increases as when the loading force is increased. The slope, from the oxide height versus load- ...
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Effects of Annealing on GaAs/GaAsSbN/GaAs Core Multi shell Nanowires
... (111) GaAs peak and did not exhibit any other distinct peak as reported previously [11] on as- grown nitride core-shell ...lattice-matched GaAs/GaAsSbN/ GaAs core-shell structure, which suggests that ...
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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... In summary, vertical energy transfer for InAs/GaAs QD pair structures with and without an AlGaAs barrier was compared. Low-temperature PL measurements show that the QD peaks shift to the blue and the relative PL ...
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Rolled Up Nanotech: Illumination Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers
... The ESE was used to position and control the roll up of tubes from strained InGaAs/GaAs bilayers. The patterning allowed us to create well-defined starting edges suitable for the illumination experiment (as in ...
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Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111)
... has ABAC stacking along the c-axis (A = transition metal, B,C = pnictogen). The structure of the cubic (c-) TMP polymorphs are predicted to be signi¯cantly less energetically favorable than the n-polymorphs under ...
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Absorption coefficients in AlGaInP lattice-matched to GaAs
... sitions in these samples are shown in Table 2. Circular mesa diodes (35 – 210 µm radii) with annular top contacts were fabricated using standard photolithography and wet chemical etching as detailed in [12]. To min- ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... High-growth-temperature GaAs spacer layers were used to sup- press the formation of threading dislocations [18,19]. The surface morphology of the solar cell samples was characterised by a Veeco Nanoscope V atomic ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... to 1 + mβ and non-linearities vanish. For quantitative analysis we combine Eqs. 1, 3 and the spin temperature hypothesis of Eq. 2 (see derivation in Methods) and use kA product as the sole fitting parameter. For QD B1 ...
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Suppression of cross-hatched polariton disorder in GaAs/AlAs microcavities by strain compensation
... In conclusion, we have proposed and demonstrated the suppression of the cross-hatch disorder in GaAs/AlAs micro- cavities by strain compensation, which was realized by incorporating thin AlP layers into the AlAs ...
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Performance assessment of multijunction solar cells incorporating GaInNAsSb
... GaInP/ GaAs/GaInNAs triple-junction SCs operated at a concen- tration of 300 times have up to 3- to 6-percentage point higher efficiencies than GaInP/GaAs/Ge ...
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Characterization of 6 1 Å III V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy
... and dark current measurements, GaSb p-i-n structures grown on GaAs and Si substrates using IMF.. arrays were compared with an equivalent structure grown lattice matched on native GaSb..[r] ...
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