n-p junction device
"Leakage Current Reduction Causes Due to Sub-Threshold Conduction in Parasitic p-n Junction"
... This work reviewed circuit optimization design techniques for controlling the OFF current of CMOS circuits in both standby and active modes of circuit operation. The sub- threshold leakage control techniques that do not ...
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One sided rectifying p n junction diodes fabricated from n CdS and p ZnTe:Te semiconductors
... one-sided p-n hetero-junction diodes have been successfully carried out using both p-type ZnTe and n-CdS ...of n-CdS and p-ZnTe layers ...one-sided p-n ...
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A detailed study of p n junction solar cells by means of collection efficiency
... The cell parameters chosen for the simulation for the present model and PC1D are summarized in Table 2. It should be noted that the results obtained from our calculation are in good agreement with the simulated result ...
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Influence of Adsorption of Dopant on Distribution of the Dopant in A P N Junction
... of p-n-junction and homogeneity of dopant distribution in enriched ...of p-n-junction gives us possibility to decrease switching time of the ...of ...
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Effect of Various Radiations on the Working of P-N Junction Diode
... the p-n junction diode as its component and are capable of working in the environmental conditions effected by the various kind of radiations that are discussed ...the p-n ...
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Investigation of electrically active defects in InGaAs quantum wire intermediate band solar cells using deep level transient spectroscopy (DLTS) technique
... semiconductor device, the inability to absorb light with energy less than the bandgap and the loss of photons with energies exceeding the bandgap as heat are considered to be the main fundamental effects that ...
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Study on the Theoretical Limitation of the Mid Infrared PbSe N+ P Junction Detectors at High Operating Temperature
... It is well known that Auger coefficient in IV-VI semiconductors [5] [6] [7] is about an order of magnitude lower than those in Sb-based type-II QWs, [8] [9] [10] which are in turn significantly suppressed relative to ...
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Design and Construction of Solar Operated Thermo-Electric Heating and Cooling System
... the p-n ...the device. The TEC consists of a p-n material ...the p-n junction theory used in diodes - the most simple semiconductor ...In p- material, the ...
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Effects of substrate temperature of window layer on the performance of SnxSey/ZnO:A1 P-N junction solar cell
... A solar cell is a device that is highly embraced both in rural and urban areas to provide an alternative source of electrical power to the ever increasing demand.Thetechnologies applied in the manufacture of solar ...
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Electrical characteristics of silicon-doped GaAs lateral p-n junctions
... lateral p-n ...of junction compared to all others, pointing to an additional recombination or carrier loss mechanism at the GaAs/AIGaAs ...As device layer, where they recombined as ...active ...
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Effect of disorder on a graphene p n junction
... this device, the suggested setup should be some- what ...density n共x兲, which would shift the location of the p-n interface away from the x= 0 point and closer to the edge of either one of the ...
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Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate
... (Si) device down-scaling is facing a big challenge to maintain its high drive current capability along with lower leakage ...shallow n + /p junction in ...
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Optoelectronic devices based on graded bandgap structures utilising electroplated semiconductors
... As shown in Figure 5.17, the visual appearance of ZnTe layers differ from each other due to the variation in growth duration. Figure 5.17 (a) and 5.17 (b) show the visual appearance of ZnTe layers grown for 0.50 and 2.00 ...
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Electrochemical Preparation of Bilayer p-n Junction of n-CdS / p-P3HT
... its n-type behaviour which can form heterojunctions with p-type ...Since p-type CdS is very difficult to be fabricated because of strong self-compensation effect due to the sulfur vacancies and the ...
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Effect the Thickness on the Electrical Properties and (I-V) Character of the (CdTe) Thin Films and Find the Efficiency of Solar Cell CdTe/CdS Ramiz Ahmed Mohamed| Dhuha Kareem Harfash| Fallah Ibrahim Mustafa|
... both n- and p- type materials using a large number of preparation methods / techniques such as vacuum deposition (5), electro-deposition (6), (7), metal- organic chemical vapor deposition (8), (9), close- ...
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Characterization of SnxSey /SnO2: Co p-n junction deposited by spray pyrolysis for photovoltaic application
... The photovoltaic effect was first discovered in 1839 by French physicist A.E Becquerel (Greg, 2002). However, it was not until 1883 that the first photovoltaic cell was built, by Charles Fritts (Chapin et al., 1954), who ...
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Effect of Substrate Temperature on the Optical Properties of SnxSey/ZnO:Al P-N Junction Solar Cell
... Tin and selenium which are group four and group six elements were used to make the P- layer. Tin (99%) purity and selenium (99.5%) purity samples were synthesized in specific ratios by mass ranging from 0.4 to 1.2 ...
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Study On Noise Attenuation Of Multi-Cylinder Diesel Engine With Existing And Modified Muffler
... JUNCTIONS There are two types of junctions used in bond graph viz.a S-Junction 1 junction b P- Junction 0 Junction aS- JUNCTION shown in the following figure Fig.. The constitutive law f[r] ...
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Utilization of Embedded Metal Nanostructures for Solar Cells
... External view of the prepared samples is shown in figure 2. The sample represents a multilayer system grown on the single-crystalline substrate of p-type. The front surface of the substrate is coated in series by ...
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EMF of Hot Charge Carriers Arising at the p n Junction under the Influence of the Microwave Field and Light
... asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading ...
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