p-n junction voltage
"Leakage Current Reduction Causes Due to Sub-Threshold Conduction in Parasitic p-n Junction"
... 215 The device can become susceptible to unwanted device turn-on and premature breakdown by parasitic BJT. The base resistance Rb must be minimized through careful design of the doping and distance under the source ...
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PHYSICAL-TECHNOLOGICAL ASPECTS OF A MULTIFUNCTIONAL SENSOR BASED ON A FIELD-EFFECT TRANSISTOR
... the p-n- junction is due to the fact that for large thicknesses the field-effect transistor sensitivity to external actions decreases and for smaller ones there is a possibility of hysteresis ...
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Effect of Various Radiations on the Working of P-N Junction Diode
... of p-n junction diode. A number of p-n junction diodes have been exposed to various ...on voltage) of these p-n junction diodes have been measured ...
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Influence of Deformation on CVC p n Junction in a Strong Microwave Field
... of p-n-junction in a strong microwave (MW) field and shows that the deformation increases the current generated in the p-n- ...of p-n-junction in which ...
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Design and Construction of Solar Operated Thermo-Electric Heating and Cooling System
... controlling voltage is send to the battery for storing purpose battery store that electric current in the form of chemical as we know battery storing by electric energy that will converted in to the chemical ...
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EMF of Hot Charge Carriers Arising at the p n Junction under the Influence of the Microwave Field and Light
... asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading ...
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The Effect of Light on the CVC of Strained p n Junction in a Strong Microwave Field
... silicon p-n-junctions in a microwave ...of p-n-junction in a strong microwave field, reducing the barrier illuminated p-n-junction, is proportional to the height of ...
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Effect of disorder on a graphene p n junction
... gradients n ⬘ and higher mobilities to satisfy the condition ...on n ⬘ becomes less stringent for substrates of high dielectric constant ...hand, n ⬘ is larger for the same gate voltage and, ...
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Electrochemical Preparation of Bilayer p-n Junction of n-CdS / p-P3HT
... with white light (300 W). The light was manually chopped to better delineate dark and photocurrent. The formation of an electron-hole pair resulted when semiconductor absorbs light. Photocurrent will be produced when the ...
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One sided rectifying p n junction diodes fabricated from n CdS and p ZnTe:Te semiconductors
... one-sided p-n hetero-junction diodes have been successfully carried out using both p-type ZnTe and n-CdS ...of n-CdS and p-ZnTe layers ...one-sided p-n ...
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Electrical characteristics of silicon-doped GaAs lateral p-n junctions
... the voltage range over which the excess current dominates, the band-tails must extend to the centre of the band-gap, whilst possessing a sufficiently high density of states to sustain the measured current ...the ...
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A detailed study of p n junction solar cells by means of collection efficiency
... The analysis of solar cell performance in terms of material and microscopic device parameters is the key to understanding device performance and efficiency. In general, two principal sets of electrical characteristics are ...
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The Effects of Fabrication Prameters and Electroforming Phenomenon on CdTe/Si (p) Heterojunction Photovoltaic Solar Cell
... a p-type crystalline silicon substrate. The open circuit voltage increases proportionally to the band gap, whereas the number of absorbed photons, ...of voltage and current, has a maximum value at ...
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Effects of substrate temperature of window layer on the performance of SnxSey/ZnO:A1 P-N junction solar cell
... Solar cells are classified into three generations which indicates the order of emergence. The first generation solar cells consist of large area, high quality and single junction devices. They involve high energy ...
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Investigation of electrically active defects in InGaAs quantum wire intermediate band solar cells using deep level transient spectroscopy (DLTS) technique
... In a photovoltaic semiconductor device, the inability to absorb light with energy less than the bandgap and the loss of photons with energies exceeding the bandgap as heat are considered to be the main fundamental ...
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Effect of Substrate Temperature on the Optical Properties of SnxSey/ZnO:Al P-N Junction Solar Cell
... Tin and selenium which are group four and group six elements were used to make the P- layer. Tin (99%) purity and selenium (99.5%) purity samples were synthesized in specific ratios by mass ranging from 0.4 to 1.2 ...
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Study On Noise Attenuation Of Multi-Cylinder Diesel Engine With Existing And Modified Muffler
... JUNCTIONS There are two types of junctions used in bond graph viz.a S-Junction 1 junction b P- Junction 0 Junction aS- JUNCTION shown in the following figure Fig.. The constitutive law f[r] ...
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Growth and Characterization of Jet Nebulizer Spray Deposited N-type WO3 Thin films for Junction Diode Application
... junction diode was prepared using JNSP technique. The diode parameters of ideality factor (n) values were measured as 5.8 in darkness and under illumination as 3.9.The photoconduction nature of the prepared ...
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Fabrication and characterization of solar cells based on silicon nanowire homojunctions
... fabricated p-n junction solar cells catalyzed with Zn exhibited a range of efficiencies from ...the p-n junction cells catalyzed with Au ranged between ...the p-n ...
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Characterization of SnxSey /SnO2: Co p-n junction deposited by spray pyrolysis for photovoltaic application
... efficient absorber layers in solar cells for an optical band gap of 1 – 2.7eV and electrical conductivity of 0.01-0.25 Ω -1 cm -1 . Madelung (1992) reported that SnSe had a drift hole mobility of of 0.7m 2 V -1 s -1 . ...
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