sapphire(0001) substrates
Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN based LEDs
... This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown ...
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Large scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV nanoimprint lithography
... GaN substrates, sapphire is most commonly used as the substrate for LEDs due to its high-temperature stability and physical ...underneath sapphire substrate, high threading dislocation densities with ...
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Modulus and Hardness Change of Silicon and Sapphire Substrates by TiC/VC Multilayer Coatings
... So far, a wide variety of MuL coatings have been studied to improve the resistance of various metallic or nonmetallic bulk material (cf., e.g., Abadias et al. [9]). The aim of the present work was to study the nanohard- ...
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Enhancement of InGaN Based Light Emitting Diodes Performance Grown on Cone Shaped Pattern Sapphire Substrates
... patterned sapphire substrates (PSS) technique as a maskless and growth interruption-free means has proved to be another feasible approach to reducing the TD density and the percentage of total internal ...
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Nanoscratch Characterization of GaN Epilayers on c and a Axis Sapphire Substrates
... We employed a combination of nanoindentation and AFM techniques to investigate the contact-induced deformation behavior of GaN films on c- and a-axis sapphire substrates. We observed three separate scratch ...
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Effect of Annealing Temperature and Atmosphere to Surface Solid Phase Reaction of Sapphire Substrates and Spin Coated Copper Nitrate Gel Films
... A copper source solution was prepared by dissolving 2.42 g of copper(II) nitrate trihydrate in 25 mL of 2-methoxyethanol. The solution was stirred for 24 h to produce a light blue and homogenous solution. The solution ...
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Micromorphology of AlN Epilayers on Sapphire Substrates
... Magnetron sputtering was used for preparation of the AlN films. For the target material aluminum target was used. Nitrogen component was compensated from HF-activated plasma. The sapphire substrates were ...
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Characterization of hydrogen etched 6h-sic(0001) substrates and subsequently grown AlN films.
... on substrates such as sapphire or 6H–SiC. The 共 0001 兲 surfaces of as-polished wafers of the latter substrate contain steps that are one Si/C bilayer in ...关 0001 兴 ...共 0001 兲 ...
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Structure and Properties of VO2 and TiO2 Based Epitaxial Heterostructures Integrated with Silicon and Sapphire Substrates.
... large categories for epitaxy, namely homoepitaxy and heteroepitaxy. In the former, the film and the substrate are the same material. Epitaxial silicon films deposited on silicon wafers using vapor-phase epitaxy (VPE) is ...
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Interfactant action of an amphiphilic polymer upon directing graphene oxide layer formation on sapphire substrates
... Quality assured surface pre‑treatment may greatly enhance adhesive interactions and, thus, the performance and durability of material joints. This holds true as well for substrates used in coating processes as for ...
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Effects of substrate annealing on the gold catalyzed growth of ZnO nanostructures
... c-plane sapphire substrates and their characteristic parameters are shown in Figure 1 andTable 1 ...received substrates and those annealed at 1,000°C exhi- bit a rough surface morphology with ...
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High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire
... on substrates of up to 3 ...SiC substrates with sizes ranging from 10 10 mm 2 up to ...on sapphire at substrate temperatures between 1000 and 1650 C (thermocouple ...of sapphire and h-BN ...
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Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire
... 1650 °C was 0.49 nm. Figure 4 shows the FWHMs of the (a) (0002)- and (b) ( 1012 )-plane XRCs for the AlN bu ff er layers after annealing at various temperatures. The dotted line shows the FWHM of the XRC for the AlN bu ff ...
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High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire
... on substrates of up to 3 ...SiC substrates with sizes ranging from 10 10 mm 2 up to ...on sapphire at substrate temperatures between 1000 and 1650 C (thermocouple ...of sapphire and h-BN ...
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Investigation of Europium Doped Wide Band Gap Oxides and an Annealing Study of the Amorphous Oxide Semiconductor - Indium Gallium Zinc Oxide
... The electronic, optical and luminescent properties of europium doped wide band gap oxide thin films and the electronic properties of indium gallium zinc oxide (IGZO), a novel amorphous oxide semiconductor were ...
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High electron mobility and low carrier concentration of hydrothermally grown ZnO thin films on seeded a plane sapphire at low temperature
... ZnO-seeded substrates [7,11,17,19-21], catalyzed substrates [22], or seed/catalyst-free substrates ...ZnO-seeded substrates are mostly in the form of one- dimensional (1D) nanostructures ...
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Epitaxy of Polar Oxides and Semiconductors.
... The anomalous x-ray scattering experiment is accomplished in Bragg-Brentano geometry with a PANalytical Empyrean x-ray diffractometer. The Ni-filters were removed from the diffracted beam optics to ensure the continuous ...
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Growth and Characterization of ZnO and ZnO-Based Alloys MgxZn1-xO and MnxZn1-xO
... The light-emitting diodes (LEDs) with high brightness and durability have the applications in display devices. Similarly, laser diodes (LDs) have been fabricated for applications ranging from optical communication ...
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Growth and Characterization of Epitaxial ZnO Thin Films on GaN(0001) Epilayers and ZnO{0001} Substrates Using Metalorganic Chemical Vapor Depositon
... Oxygen, the most obvious source of this reactant has also been studied while utilizing DEZ as the zinc source. In one report, a comparison of films grown varying the total chamber pressure from 0.05 torr to 6 torr while ...
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Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate
... Electroluminescence (EL) measurements were carried out after the fabrication of LEDs at a current of 100 mA. The EL spectra for the LEDs fabricated on SSP and PSS substrates is shown in Figure 3. The EL spectra ...
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