Schottky contact
Deep Traps and Parasitic Effects in Al0 25Ga0 75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces
... different Schottky contact surfaces [(200 µm × 200 µm), (2 µm × 100 µm) and (1 µm × 100 µm)] revealed the presence of two defects; one negative peak corresponding to a hole trap labeled H1 having an ...
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Electrical Properties and Carrier Transport Mechanism of Au/n GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer
... n-GaN Schottky recti fi er incorporating a copper pthalocyanine (CuPc) interlayer using current voltage (I V), capacitance voltage (C V) and conductance voltage (G V) ...n-GaN Schottky ...
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Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β Ga2O3 Thin Film
... mechanical exfoliation has a large number of dangling bonds and surface states which will capture electrons to deplete the carriers from anode to cathode under reverse bias [33]. Taken the negative surface charge into ...
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Indium tin oxide (ITO) deposition, patterning and Schottky contact fabrication
... Since 1907, when reports of transparent and conductive cadmium oxide films first appeared, interest in transparent conductors has rapidly increased [1]. Indium Tin Oxide (ITO) is one of the most attractive of these ...
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Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si on Insulator
... Ti Schottky structure on the Si-on-insulator (SOI) in the temperature range of 175 375 K by steps of 25 ...SOI Schottky contact were found to be decreased and increased, respectively, indicating a ...
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Dependence of charge carrier injection on the interface energy barrier in short channel polymeric field effect transistors
... of contact materials on the electrical characteristics of field-effect transistors made from poly(3-hexylthiophene) with short-channel lengths of 80 nm is ...the contact metal. A Schottky ...
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Improved Simultaneous Estimation of Location and System Reliability via Shrinkage Ideas
... (Ru) Schottky barrier was developed for operation in harsh ...metal contact for such ...Ru contact by RF sputtering, followed by ...Ru/4H-SiC Schottky contact was found to be of ...the ...
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Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n Type Si
... Si Schottky contact whilst as ...Si Schottky contacts rapid-thermal- annealed at 100, 150 and 200°C, respectively, as represented in Table ...high Schottky barrier height patches at the ...
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Metal aluminium gallium nitride Schottky contacts formation
... for Schottky contact to ...pinning. Schottky barrier heights o f metal- AlxGai_xN are expected to show a dependence on the ...Hence, Schottky contacts can be classified in two distinct ...
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Electrical Measurements of N-Type 4H- Silicon Carbide Metal Contacts
... of n greater than 2.. For large bias voltage the ideality factor had very large values. Such a behavior is commonly associated with series resistance. Despite the removal of the oxide layer and other contaminants from ...
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Solution processed germanium nanowire positioned Schottky solar cells
... The Schottky contact of the metal- semiconductor has attracted huge interests for applica- tions, such as the UV detectors, nanogenerators, and solar cells [8-10] because of the ease of junction forma- tion ...
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nnano.2012.187.pdf
... rectifying Schottky contact, to a photoconductor under illumination with an ohmic contact, as shown by the dark current and photocurrent traces in ...
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Annealing Effects on Electrical Properties and Interfacial Reactions of Ni/Cu Schottky Rectifiers on n Type InP
... (100) Schottky barrier ...Au/Ni Schottky con- tacts exhibits high barrier height and low reverse leakage current than the annealed ...Ni/V Schottky contacts to n-InP after rapid thermal ...
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Investigation of vertically stacked hybrid devices
... a Schottky contact with various sem iconducting ...iconductor Schottky contact structure has recently been em ployed in graphene-based devices such as solar c e l l s , b a r r i s t o r s ' ^ ...
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Design, Fabrication and Characterization of High Voltage (>10 kV) 4H-SiC MPS Diodes.
... the Schottky contact on n-type drift region and Ohmic contact on p-type region at the same time by Nickel was applied to fabricate a high voltage (>10 kV) SiC MPS diode ...High Schottky ...
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Effect of Schottky Barrier and Amorphous Structure of Sno2 Thin Film
... The I-V curves are shown the non-linear Schottky contact. The reduction of gradient of I-V causes the depletion layer, which was increased with increasing the annealing temperature. That is, the depletion ...
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Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode
... the Schottky contact affected the evaluation of barrier height, Norde function evaluates the values even for high series ...of contact resistance and semiconductor device’s resistance (Bouiadjra et ...
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Junction investigation of graphene/silicon Schottky diodes
... We developed chemical vapor deposition approach to the synthesis of graphene at large scale and low cost, which makes the wide applications of graphene possible. The gra- phene coating on n-Si wafer forms Schottky ...
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Evaluation of SiC Schottky diodes using pressure contacts
... SiC Schottky diodes is interesting, given that Schottky diodes exhibit better electrothermal characteristics compared to PiN ...SiC Schottky diodes, unlike PiN diodes, have no reverse recovery ...
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Modelling the inhomogeneous SiC Schottky interface
... and fully fit, incorporating the effects of interface inhomogeneity, patch pinch-off and resistance, and ideality factors that are both heavily temperature and voltage dependent. A Ni/SiC Schottky diode is ...
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