• No results found

Schottky diode

Fabrication and characterization of planar dipole antenna integrated with gaas based schottky diode for on chip electronic device application

Fabrication and characterization of planar dipole antenna integrated with gaas based schottky diode for on chip electronic device application

... and Schottky diode designed on the same substrate is illustrated in Figure ...and Schottky diode presented in ...and Schottky diode can be achieved without any matching ...and ...

11

Piezoelectric response to coherent longitudinal and transverse acoustic phonons in a semiconductor Schottky diode

Piezoelectric response to coherent longitudinal and transverse acoustic phonons in a semiconductor Schottky diode

... GaAs Schottky diode with compressive and shear acoustic phonons, generated by the femtosecond optical excitation of an Al film transducer and mode conversion at the Al-GaAs ...the Schottky device on ...

6

High Voltage β Ga2O3 Schottky Diode with Argon Implanted Edge Termination

High Voltage β Ga2O3 Schottky Diode with Argon Implanted Edge Termination

... the thermionic emission (TE) model [31, 32]. With the temperature increasing, the n decreases from 1.06 to 1.02 and the barrier height reduces slightly but is almost constant at 1.21 ± 0.01 eV over the temperature range, ...

8

Optimal Electric Wave Propagation Parameters on a Transmission Line --- Schottky Diode System

Optimal Electric Wave Propagation Parameters on a Transmission Line --- Schottky Diode System

... Abstract—This paper explores the optimal conditions for wave propagation on a microstrip line loaded by a Schottky diode. Investigations are undertaken by studying the transmitted power versus frequency, ...

8

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

... type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating ...type diode were carried out in the frequency range from 12 Hz to 100 kHz using an ...

5

ITO/PEDOT: PSS/MEH: PPV/Alq3/LiF/Au as a
schottky diode

ITO/PEDOT: PSS/MEH: PPV/Alq3/LiF/Au as a schottky diode

... of Schottky diodes are similar to ordinary p-n junction ...organic Schottky diode depends on characteristics of the metal/organic semiconductor ...of Schottky diodes to be non-ideal [5], ...

7

Design of Non-Volatile Cache Memory Using Spin Orbit Torque MRAM and Schottky Diode

Design of Non-Volatile Cache Memory Using Spin Orbit Torque MRAM and Schottky Diode

... with schottky diode offers too many benefits such as non-volatility nature, small in size, higher density, low power consumption, scalability and infinite times of ...with schottky diode at ...

10

380 GHz
 Sub-Harmonically Pumped Mixer Based on Anti-Parallel Planar Schottky Diode

380 GHz Sub-Harmonically Pumped Mixer Based on Anti-Parallel Planar Schottky Diode

... anti-parallel diode pair are key components for millimeter and sub-millimeter wave heterodyne receivers ...different diode based mixers have been demonstrated at THz ...the Schottky diode ...

6

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e beam evaporation

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e beam evaporation

... local Schottky barrier ...a Schottky diode is obtained by integrating the thermionic current expression with an individual SBH and weighted using the Gaussian distribution function across all ...

7

I  Fundamental limitations in microelectronics  II  Power Schottky diode design and comparison with the junction diode  III  Permittivity of strontium titanate

I Fundamental limitations in microelectronics II Power Schottky diode design and comparison with the junction diode III Permittivity of strontium titanate

... For the present work we shall arbitrarily choose the maximum allowable oxide electric field in a practical device to be The minimtnn size of a MOS transistor, for a given drain voltage a[r] ...

135

Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode

Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode

... The Schottky junction is one of the fundamental structures in electronics and finds application in electronic devices like low- voltage, high-current rectifiers ...the Schottky junction decrease almost ...

5

Design, fabrication and characterization of gallium nitridebased circular schottky diode for hydrogen sensing

Design, fabrication and characterization of gallium nitridebased circular schottky diode for hydrogen sensing

... MOS capacitors or FETs using Si-based material can be made as a gas sensor by using catalytically active materials as Schottky gate contacts [8]. However, in view of practical applications, there is a severe ...

22

Growth of low temperature silicon nano structures for electronic and electrical energy generation applications

Growth of low temperature silicon nano structures for electronic and electrical energy generation applications

... Schottky diodes made of bulk materials do not dis- sipate heat quickly; hence, performance and lifespan of the device are reduced. Recently, one-dimensional (1D) nano-structures and their incorporation into ...

8

Electrically active defects in novel Group IV semiconductors

Electrically active defects in novel Group IV semiconductors

... for Schottky diode fabrication by immersing the sample in OO3+H 2SO4 at 443K for 3 minutes, and then rinsing in a 1:1 boiling solution of H 2O2 (30 %) and NH 4OH (70 ...diamond Schottky diodes ...

246

Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes

Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes

... (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 ...The Schottky diodes parameters were then extracted from these ...unrealistic Schottky diode ...

18

Investigation of vertically stacked hybrid devices

Investigation of vertically stacked hybrid devices

... (i.e. Schottky contacts) can be used for a w ide variety o f device ...applications. Schottky contacts can also be used as test vehicles for investigating the physical and electrical properties o f a sem ...

152

Subject Index To Volume 42187-192

Subject Index To Volume 42187-192

... Pd/Co multilayer thin films, magnetic properties, a PdGaN Schottky diode, a. Pd/Ge/Pd interlayers, between n-GaAs and Si, a Pd/Pt/AdPd ohmic contacts, a[r] ...

6

Analysis of Punch-Through Breakdown Voltages in 3C-Sic Schottky Barrier Diode Using Gaussian Profile for 200µm Thick Wafer

Analysis of Punch-Through Breakdown Voltages in 3C-Sic Schottky Barrier Diode Using Gaussian Profile for 200µm Thick Wafer

... of Schottky diodes is larger than that of p–n junction ...a Schottky diode requires less forward bias voltage to obtain a given current than p–n junction ...diode. Schottky diodes based ...

11

Design and development of harvester rectenna at GSM band for battery 
		charging applications

Design and development of harvester rectenna at GSM band for battery charging applications

... This paper describes the design of the harvester RECTENNA for charging mobile applications. A rectenna (RECtifying anTENNA) is a combination of a receiving antenna and a rectifying circuit which converts RF signal to ...

7

Schottky Barriers on Layered Anisotropic Semiconductor – WSe2 – with 1000 Å Indium Metal Thickness

Schottky Barriers on Layered Anisotropic Semiconductor – WSe2 – with 1000 Å Indium Metal Thickness

... the diode parameters were effectively construed in terms of the contribution of these multi- ple charge transport mechanisms across the interface of the fabricated ...Various Schottky diode ...

7

Show all 1148 documents...

Related subjects