self-assembled InAs/GaAs quantum dots
Temperature dependence of the photoluminescence of self assembled InAs/GaAs quantum dots in pulsed magnetic fields
... of self-assembled InAs / GaAs quantum dots as a function of temperature 共 T 兲 ...by dots with a lower PL ...low-energy dots are larger in size only in the growth ...
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Symmetry of k·p Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure
... pyramidal self-assembled InAs/GaAs quantum dots for different values of the period of the structure and in the presence of an external axial magnetic ...
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Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
... Semiconductor quantum dots (QDs) have a great poten- tial for applications in a wide variety of novel devices ...especially InAs/GaAs(Sb), have been drawing great interest due to their promise ...
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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... atomic-like quantum confinement, self-assembled semiconductor quantum dots (QDs) are par- ticularly attractive from a fundamental research perspective and also for their industrial ...
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Optically pumped intersublevel midinfrared lasers based on InAs-GaAs quantum dots
... in InAs–GaAs pyramidal self-assembled quantum ...investigated dots, laser emission in the spectral range 13–21 m is ...on quantum wells, an advantage of the proposed type ...
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Probing the carrier transfer processes in a self assembled system with In0 3Ga0 7As/GaAs quantum dots by photoluminescence excitation spectroscopy
... of InAs QDs [12]; (v) growth on high-index-oriented GaAs substrate [13]; (vi) growth of InGaAs/GaAs quantum dot chains [14,15]; (vii) growth of strongly elongated InAs QDs on InP ...
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Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... 2.5 GHz at 50°C would give a thermal-limited band- width of 10 GHz and 3.9 GHz (squares in Figure 4), respectively. This suggests that the main limitation on the bandwidth might be due to the decrease in differen- tial ...
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Quantum box energies as a route to the ground state levels of self-assembled InAs pyramidal dots
... of InAs/GaAs quantum confined structures is ...shaped dots are calculated using a single-band, constant-confining-potential model that in former applications has proved to reproduce well both ...
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Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots
... an InAs/GaAs self-assembled ...driven quantum dot and its phononic environment, and present experiments showing how the LA-phonons modify the absorption spectrum of a picosecond laser ...
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In situ accurate control of 2D 3D transition parameters for growth of low density InAs/GaAs self assembled quantum dots
... and 5a show a series of micro-PL of decreasing △ from samples 1 to 6. We can find that the micro-PL spectra are multiple lines when △ > 0 and become a sharp single line when △ ≤ 0. As shown in Figure 5a,b, under the ...
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Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots
... The commonly accepted thermodynamic understand- ing of the SK mode describes the QD formation on top of a WL of a certain thickness. However, it is not accur- ate in real situations. It has been reported that in the ...
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Bright Single Photon Source at 1 3 μm Based on InAs Bilayer Quantum Dot in Micropillar
... fiber-based quantum information requires real single-photon sources (SPSs) at telecom band to replace the traditional pseudo-SPSs based on strongly decayed pulse ...lasers. Self-assembled individual ...
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Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self Assembled Nanoholes
... parameters. Self-assembled quantum dots are cre- ated by filling of nanoholes in AlGaAs with ...hand, self-assembly of strain-free quantum dots with very uni- form size ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... term quantum dot (QD) refers to zero dimensional structures that possess superior transport and optical ...the quantum well, the superior attributes of the quantum dot has encouraged further research ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... as self-assembled QDs due to large lattice (~ 7%) mismatch between InAs layers and GaAs substrate ...of InAs on GaAs (001) substrate results in the formation of a ...
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Spin effects in InAs self assembled quantum dots
... Figure 2 shows the I(V) characteristic curves for sev- eral laser intensities. In dark condition, we have observed only one electron resonant peak which was associated to the resonant tunneling through the second ...
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Effect of an in situ thermal annealing on the structural properties of self assembled GaSb/GaAs quantum dots
... a GaAs substrate to avoid damaging the ...the quantum dots which are near the surface of our ...in InAs/GaAs QDs has shown to reduce the density of threading dislocations and to have ...
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... 10. Maximov MV, Tsatsul ’ nikov AF, Volovik BV, Sizov DS, Shernyakov YM, Kaiander IN, Zhukov AE, Kovsh AR, Mikhrin SS, Ustinov VM, Alferov ZI, Heitz R, Shchukin VA, Ledentsov NN, Bimberg D, Musikhin YG, Neumann W: Tuning ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... metamorphic InAs QDs have been performed in last years [37 – 39, 43], full aspects of the photoresponse mechanism still remain unclear, as along with the influence of the MB on the properties of the ...the ...
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Exciton dynamics in droplet epitaxial quantum dots grown on (311)A oriented substrates
... orientations. Quantum dots grown on (311)A-oriented surface are obtained with record surface density, with or without a wetting ...for quantum-dot lasing, thanks to the large density of ...
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