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semiconductor band-gap energy

Synthesis, Characterization and Magnetic Properties of Ce3+ Substituted Cu Nanoferrite by Sol-gel Autocombustion Technique

Synthesis, Characterization and Magnetic Properties of Ce3+ Substituted Cu Nanoferrite by Sol-gel Autocombustion Technique

... analytical grade, such as Nickel nitrate, Cobalt nitrate and ferric nitrate, were used as the source materials. The present work is to study structural and magnetic properties of the synthesized samples. The role of Cr ...

6

Comparative studies on the electronic transport in magnetically quantized low band gap semiconductor system

Comparative studies on the electronic transport in magnetically quantized low band gap semiconductor system

... the energy dispersion relation gets quantized into various equally spaced energy levels called Landau levels and the motion of the carriers is completely ...The band structure of n-HgCdTe is found to ...

9

First principles study of structural and electronic properties of CdO

First principles study of structural and electronic properties of CdO

... calculated energy structure, total density of states (DOS) and partial DOS adopting GGA ,LDA and hybrid-DFT approach, the calculation results are shown in ...indirect band gap semiconductor by ...

5

An Innovative Bidirectional DC-AC Converter to Improve Power Quality in a Grid-Connected Microgrid

An Innovative Bidirectional DC-AC Converter to Improve Power Quality in a Grid-Connected Microgrid

... electrical energy still raises a huge interest for end-users at the household ...an energy transfer is required between a storage system and the AC-grid, and vice ...wide band-gap ...

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Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment

Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment

... One of our motivations is to find a material candidate in the XX Y Z family which shows a SGS behavior having a high Curie temperature. CoFeCrGa (CFCG) Heusler is one such compound that shows the desired properties. We ...

7

Characterization of Wide Band Gap Power Semiconductor Devices.

Characterization of Wide Band Gap Power Semiconductor Devices.

... the energy losses were calculated at 8 different current levels providing switching loss dependence on the load ...switching energy losses and switching ...

68

Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors

Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors

... Floquet band gaps for bulk matter are ...conduction band split in a multitude of Floquet sub-bands which cross each ...conduction band of the correlated matter in the non-equilibrium is ...excitation ...

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Optical Studies and Photovoltaic Performance of Nanocrystalline Titanium Dioxide Sensitized with Local Dye

Optical Studies and Photovoltaic Performance of Nanocrystalline Titanium Dioxide Sensitized with Local Dye

... solar energy in the effort to address the daunting global energy and environment challenges of the 21 st ...wide band gap metal oxide semiconductor porous electrode [2, ...solar ...

6

Two Photon Absorption in Nanostructure Wide Band Gap Semiconductor CdS Using Femtosecond Laser

Two Photon Absorption in Nanostructure Wide Band Gap Semiconductor CdS Using Femtosecond Laser

... After deposition the film, the material was cooled to room temperature gradually. There are several experi- mental parameters which are control the homogeneity and the thickness of the nanofilm. These parameters are the ...

6

Physical And Thermal  Properties Of Cuo-Mno2-B2O3 Glasses

Physical And Thermal Properties Of Cuo-Mno2-B2O3 Glasses

... (intrinsic) semiconductor is similar to that of an insulator with heat conduction due to lattice waves (phonons) at moderate ...In semiconductor, at sufficiently high temperatures to excite the carriers ...

9

Structural And Optical Properties Of Zinc Oxide Nanoparticles Synthesize Via Sol Gel Auto Combustion Method

Structural And Optical Properties Of Zinc Oxide Nanoparticles Synthesize Via Sol Gel Auto Combustion Method

... II-IV semiconductor that exhibit a direct band gap of ...binding energy (Rusu et al., 2011). Physical properties such as electronic band structure, cleavage, and optical transparency ...

24

Passive and Active Control of Radiative Heat Flow

Passive and Active Control of Radiative Heat Flow

... thermal energy conversion with high absorptivity in solar wavelengths and low emissivity in infrared ...structures. Semiconductor based selective sur- faces with near zero absorption below the bandgap offer ...

137

Synthesis of Nickel Oxide Nanoparticles by   Electrochemical Method, Characterization and Photo degradation of Acetic Acid and Study of Antibacterial Activity of Synthesized Nickel Oxide Nanoparticles

Synthesis of Nickel Oxide Nanoparticles by Electrochemical Method, Characterization and Photo degradation of Acetic Acid and Study of Antibacterial Activity of Synthesized Nickel Oxide Nanoparticles

... a semiconductor(NiO) energy that overtake the band gap energy of the semiconductor ...valence band to the conduction band leaving a hole in the valence band ...

9

jacs.6b12755.pdf

jacs.6b12755.pdf

... of energy levels, and morphology instability, which hinder the further development of ...tunable energy levels, good device stability, and easy synthesis and puri fi ...

8

Impact of band to band Tunneling on Transient performance of Dual Gate Tunnel Field Effect Transistor (TFET)

Impact of band to band Tunneling on Transient performance of Dual Gate Tunnel Field Effect Transistor (TFET)

... function = 4.2 eV shown in Fig. 3 to explain its behavior (tunneling current). Here the paper also focuses on drain current arises through tunneling of charge carriers. From the Fig. 2, as the gate voltage increases, the ...

5

Structural and Optical Properties of Cu2Zn1-xCdxSnS4 Thin Film as an Absorber Material for Solar Cell

Structural and Optical Properties of Cu2Zn1-xCdxSnS4 Thin Film as an Absorber Material for Solar Cell

... energy gap (Eg) ...photon energy in the ...lower energy gap gap, because since ZnS has a direct optical band near ...higher energy gap of CZTS. The optical ...

5

Influence of Thickness on Optical and Sensing
Properties of MgO Thin Films Deposited by RF
Magnetron Sputtering

Influence of Thickness on Optical and Sensing Properties of MgO Thin Films Deposited by RF Magnetron Sputtering

... In this research, MgO thin films deposited on quartz glass and silicon substrate with different thicknesses 100 and 200 nm by a radio frequency (R.F.) magnetron sputtering process using magnesium oxide target under Ar ...

5

Long Period InAs/GaSb Type II Superlattices for Terahertz Application

Long Period InAs/GaSb Type II Superlattices for Terahertz Application

... fundamental band-gap, or the energy separation between the bottom of the CB1 band in the InAs layer and the top of the HH1 band in the GaSb layer, is about 10 meV (see Figure 2), which ...

10

Ab Initio Calculations for the Effect of Pressure on the Structural Properties of Si Nanoclusters

Ab Initio Calculations for the Effect of Pressure on the Structural Properties of Si Nanoclusters

... Figure 3 shows an increment in the plasmon energy with compression and a reduction of it with tensile stress. Kornyushin has showed that the plasma affects the charge distribution and so the sound wave [50]. On ...

6

A photoluminescence study of CuInSe2 single crystals ion implanted with 5 keV hydrogen

A photoluminescence study of CuInSe2 single crystals ion implanted with 5 keV hydrogen

... The energy required to create a structural defect can be presented as the sum of two terms: energy for the structural change and electronic energy ...electronic energy influences whether the ...

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