Si-SiGe:F
Electric field domains in p-Si/SiGe quantum cascade structures
... B IASED semiconductor quantum-well cascade structures, as are used nowadays in intersubband infrared photode- tectors [1], [2], lasers [3], and Bloch oscillator type devices [4], [5] are well known to be susceptible to ...
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n-Si/SiGe quantum cascade structures for THz emission
... We have considered electron transport in n-Si/SiGe cascade structures, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic ...
15
Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T Shaped Gate
... new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas ...using SiGe in the pocket regions leads to the smaller ...
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High Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture
... of Si/SiGe FET technologies was initially hindered by the poor quality of relaxed SiGe virtual ...and SiGe material with defect densities of 10 cm is now routinely ...strained ...
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Transport properties of modulation-doped Si/SiGe quantum well structures
... perform ed, one w ith a positive and one w ith the corresponding negative magnetic field at a given tem perature. Due to the long tem perature settling time of the system during the cooling process, perform ing those m ...
283
Reliable Local Strain Characterization in Si/SiGe Based Electronic Materials System
... strained Si interface, CBED patterns experience strain relaxation ...strained Si layer and near the interface can not be determined by solely using CBED ...strained Si/SiGe structures and ...
141
Electron transport in n-doped Si/SiGe quantum cascade structures
... z f , where the super- script labels the quantized state, consists in fact of the fol- lowing transitions between individual states: X +z i → X +z f 共caused by acoustic phonons, alloy and interface ...
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Electronic Defect Characterization of Strained-Si/SiGe/Si Heterostructure
... bulk Si in high-speed complementary metal-oxide-semiconductor (CMOS) technology, due to the higher electron and hole mobilities in the strained-Si channel layer ...
109
Intersubband carrier scattering in n - and p-Si SiGe quantum wells with diffuse interfaces
... To determine the effect on simple intersubband systems, scattering rates were calculated as a function of subband spacing, electron temperature, and diffusion length in single quantum we[r] ...
8
Maximum entropy mobility spectrum of two dimensional hole gas in strained Si1 x/Si heterostructures
... Analysis of the magnetic-field-dependent resistivity tensors reveals a two-dimensional hole gas 2DHG in the Si/SiGe/Si quantum well, carriers in the boron-doped cap layer, and an unknown[r] ...
213
Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures
... semiconductors Si and Ge have been studied extensively both theoretically and ex- perimentally ...like Si-Ge, have the immense potential for technological applications whose include the optoelectronic ...
6
Coupling of Semiconductor Nanowires with Neurons and Their Interfacial Structure
... to Si nano- wires [4], which have already shown a compatibility with neurons, SiGe, Ge, and GaN nanowires are compatible with hippocampal ...of Si, SiGe, Ge, and GaN nano- wires consist of SiO ...
6
Composition and Stress Analysis in Si/SiGe Structures
... Far sample S11, made under similar conditions, strained Si peak is at 512.7cm-’, which lead to the stress magnitude of 3.65 x lo9.For sample S6, the Ge content in SiGe constant compositi[r] ...
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Theory and design of quantum cascade lasers in (111) n -type Si/SiGe
... the Si-Si branch of the deformation potential in- teraction, as the Ge fraction in quantum wells is ...The f processes, which transfer electrons to the perpen- dicular valleys, are faster than g ...
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Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
... We study theoretically the phonon-induced re- laxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of ...
19
High Temperature Thermoelectric Measurement of B Doped SiGe and Si Thin Films
... For the Hall measurement of the thin film type sample, the passivation and electrodes have been patterned to prohibit the leakage current effect of Si substrate, as shown in Fig. 2(a). The thin film sample at edge of ...
7
Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology
... For comparison purposes, mesa transistors were also fabri- cated using a previously described process [19]. In this case, the extrinsic base was fabricated using a dual implant of 35 keV, 2.10 cm BF and 120 keV, 2.10 cm ...
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Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals
... of Si single crystal with intensity which exceeds melting of material leads to formation of microcones, which are possible to use for solar cells, the so-called black Si ...
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Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs
... Based on experimental and theoretical research, the uniaxial process-induced strain has been widely accepted by different industry groups and was successfully followed in 90 nm mainstream production [4]. There are two ...
123
Growth and characterization of gold catalyzed SiGe nanowires and alternative metal catalyzed Si nanowires
... in Si and Ge, and be responsible for serious problems of contamination for the CMOS ...technology. Si NW growths using alternative metal cata- lysts have already been reported previously with Pt [20], Al ...
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