SiGe-Si quantum wells
Intersubband carrier scattering in n - and p-Si SiGe quantum wells with diffuse interfaces
... to rectangular Ge profiles at interfaces between layers. Real interfaces however, may exhibit diffuse Ge profiles either by design or as a limitation of the growth process. It is shown here that alloy disorder scattering ...
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Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields
... We thank G. Jones, S. Hannas, T. Murphy, J. Park, A. Suslov, and D. Smirnov for technical assistance with experiments, and P. Baity for assistance with wire bonding. We thank S. Das Sarma, L. Engel, Z. Jiang, S. ...
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Theory and design of quantum cascade lasers in (111) n -type Si/SiGe
... Intervalley electron-phonon scattering was determined only for the Si-Si branch of the deformation potential in- teraction, as the Ge fraction in quantum wells is small. The f processes, which ...
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Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures
... the SiGe alloy, presents some new results on its electronic and optical proper- ties, and discusses the approach that has been followed to model quantum wells containing SiGe layers for ...
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Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering
... Ge quantum wells grown on SiGe virtual sub- strates with a smaller Si fraction), and is manifest in the spectra as an increased lifetime broadening component of the excitonic peaks, as well as ...
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Electric field domains in p-Si/SiGe quantum cascade structures
... p-doped Si/SiGe quantum cascades was considered within the carrier scattering transport ...two quantum-wells, and then only under par- ticular contact boundary ...
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Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures
... p-Si/ SiGe quantum cascade struc- tures has been developed and used to study carrier distribu- tions and carrier heating ...cent wells differ markedly, and we have shown how such a device can ...
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Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness
... In summary, we presented a theoretical and experi- mental study of the non-radiative lifetime of interwell transitions between heavy-hole subbands spaced by less than the (Ge-Ge) optical phonon energy in two differ- ent ...
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Electron transport in n-doped Si/SiGe quantum cascade structures
... biased quantum cascade structures the subbands are not strictly discrete, since resonances exist in the continuum, but in most cases, ...shallow wells present for X xy electrons in Si/ SiGe ...
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Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P i n Infrared Photodetectors for 1 3 1 55 μm Optical Communication
... well. SiGe/Si- superlattice p-i-n photodetectors are finding extensive applications in long haul and high bit rate optical com- munication systems and in local area networks for opera- tion in the infrared ...
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Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: Pseudopotential vs. effective mass calculation
... asymmetric Si/SiGe heterostruc- tures, with both abrupt and graded ...square quantum wells in the range of well widths of interest for silicon intersubband devices 37–42 ...n- ...
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Nanogrids and Beehive Like Nanostructures Formed by Plasma Etching the Self Organized SiGe Islands
... the SiGe films deposited on Si substrates by ultrahigh vacuum chemical vapor deposition (UHVCVD) were transformed into self-assembled SiGe nanoisland arrays by thermal ...resultant SiGe ...
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Quantum Supercurrent Transistors in Silicon Quantum Wells Confined by Superconductor Barriers
... The Si-QWs confined by the δ-barriers heavily doped with boron inside the B doped diffusion profile were identi- fied by the four-point probe method using layer-by-layer etching and by the cyclotron resonance (CR) ...
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Electron Subband Structure and Mobility Trends in P-n Delta-Doped Quantum Wells in Si
... In summary, we study the effects that produces a p-type barrier near a n-type delta-doped quantum well in Si. The Thomas-Fermi theory combined to the effective mass approximation are used for the electron ...
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Composition and Stress Analysis in Si/SiGe Structures
... Far sample S11, made under similar conditions, strained Si peak is at 512.7cm-’, which lead to the stress magnitude of 3.65 x lo9.For sample S6, the Ge content in SiGe constant compositi[r] ...
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Enhancement of the Electronic Confinement Improves the Mobility in P-n -P Delta-Doped Quantum Wells in Si
... In summary, we study the electronic subband structure and mobility trends of a n-type delta-doped quantum well in Si matched between p-type barriers of the same material. We have analyzed the effects of two ...
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Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
... sensing. Quantum well infrared photodetectors (QWIPs) utilizing intersubband transi- tions have been successful in these applications ...the quantum well is easily tunable by varying the quantum well ...
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Material quality issues in Si and SiGe molecular beam epitaxy
... Theoretical scattering rates in the SiGe 2DHG 99 Hall measurement system 105 Schematic band diagram of the SiGe 2DHG 105 Calculated carrier concentrations versus experiment 107 2DHG mobi[r] ...
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Combined Method for Simulating Electron Spectrum of δ-Doped Quantum Wells in n -Si with Many-Body Corrections
... Abstract—The combined method to investigate the electron spectrum of single n-type δ-doped quantum wells in silicon is proposed. It is based on computing the electron potential energy by means of the ...
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The influence of BF2 and F implants on the 1/f noise in SiGe HBTs with a self aligned link base
... A study has been made of noise and base current in SiGe HBTs fabricated using selective epitaxy for the silicon collector and NSEG epitaxy for the SiGe base and the n-Si cap. Two noise sources have ...
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