single GaAs quantum well
Stimulated Emission in AlxGa1-xAs -GaAs Single and Multiple Quantum Well Heterostructure.
... in quantum wells shifts in energy as a function of well width[14, 15] and at least 10 17 /cm 3 impurities doping concentration are needed to support the stimulated ...
78
Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
... in GaAs/AlAs/GaAs single barrier heterostructure using both photocapacitance and photocurrent spectroscopies at room ...show well defined resonance peak of indirect excitons formed around the ...
36
A study of photomodulated reflectance on staircase like, n doped GaAs/Alx Ga1−xAs quantum well structures
... The importance of the photomodulated reflectance spec- troscopy in complicated semiconductor QW structures and hence in QWIPs has been verified by the experi- mental and the theoretical results obtained from this work. ...
5
Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... as well as through off-resonant coupling of excitons to nano-cavities[16, ...a single InGaAs/GaAs QD excited by a strong laser pulse tuned into the phonon sideband of the neutral exciton transition ...
6
GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
... Fig. 2 PC spectra as a function of applied reverse bias and an EL spectrum at a current density of 1.4 kA cm −2 for hybrid QW/QD samples measured normal to the surface of an optical access mesa diode at room temperature. ...
8
Ultrashort electromagnetic pulse control of intersubband quantum well transitions
... double GaAs/AlGaAs quantum well structure, taking into account the ultrashort nature of the applied field, and show that high-efficiency population inversion is possible for specific pulse ...
7
Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... A single promising approach to both of these novel mechanisms is to exploit the unique properties of nanostructured materials to extend the absorption spectrum for the ultimate improvement of solar energy ...
162
Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... anisotropy of the in-plane spin splitting. We found that this anisotropy is more than 19% in this single asym- metric (001) GaAs/AlGaAs QW. We also checked the photogenerated spin concentration dependence ...
5
The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xInx Ny As1−y/GaAs quantum well
... is well known that a magnetic field considerably affects the optical and electronic properties of ...in single GaInNAs/GaAs quantum well (QW) under the magnetic ...
5
Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single quantum well by reflectance difference spectroscopy and its behavior under uniaxial strain
... with well width 3 nm, it is difficult to clearly distinguish the cor- responding energy positions of the transitions 1e2hh, 1e1lh and leh*, because they are too close to each ...
10
Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well
... p-type GaAs/AlGaAs [19], in n-type Si/SiGe [20], and in HgTe/CdHgTe [21] revealed only a single photoresistance peak owing to magneto-plasmon resonance ...
6
Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... as well as through off-resonant coupling of excitons to nano-cavities[15, ...a single InGaAs/GaAs QD under strong laser pumping at positive detuning with the driving laser to higher energy than the ...
8
Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... a single quantum ...the quantum well thickness in a SQW laser is small and such problem can dealt by increasing the wells’ number in order to enhance optical confinement ...
10
Effects of an intense, high frequency laser field on bound states in Ga1 − xInx Ny As1 − y/GaAs double quantum well
... Recently, the evolution of the growth techniques such as molecular beam epitaxy and metal-organic chemical vapor deposition combined with the use of the modulation- doped technique made it possible the fabrication of ...
6
A THEORETICAL EVALUATION OF VARIATION OF BINDING ENERGY OF THE GROUND STATE FOR A DONOR IN QUANTUM WELL IN THE PRESENCE OF TITLED MAGNETIC FIELD
... includes quantum wells 1-4 , quantum wires 5-8 and quantum dots 9-12 ...as well as single quantum wells of GaAs/GaAlAs crystal type, it has been observed that the carriers ...
17
Structural and optical properties of position retrievable low density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
... semiconductor quantum dots (QDs) have been one of the promising candidates in quantum infor- mation applications, such as single photon sources ...a single photon source application, since ...
5
Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... semiconductors quantum dots (QDs) are considered for applications in quantum infor- mation technologies and have major advantages, such as versatile device fabrication techniques and strong inter- action ...
8
Structural and optical properties of position retrievable low density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
... of single InAs QDs by two lasers (one for the posi- tioning of appropriate single QDs by PL measurement, the other for developing photoresist) ...one single QD ...a single QD, laborious work ...
5
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... The reason for the small feature after 1.39 eV in the spectrum of InAs/GaAs sample contacted to the MBE buffers can be different from the above-discussed for metamorphic InAs/InGaAs sample. In our opinion, it is ...
9
An Exactly Solvable Algebraic Model for Single Quantum Well Treatments
... ics describing the system. For this reason, the relevant Schrödinger equation including the whole potential is split carefully in two parts which individually yield, in closed forms, the solutions for the unperturbed ...
7