Switching characteristics
Capacitance effect on the oscillation and switching characteristics of spin torque oscillators
... the characteristics of prepared spin- torque oscillator devices, it is highly essential to explore the capacitance effect on oscillation characteristics and switching ...
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Temperature Dependent Non linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure
... non-linear switching characteristics and mechanism are still unclear ...resistive switching behav- ...the switching material and the electrode can control the interfacial-type bipolar ...
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Comparative Analysis of Switching Characteristics of Non Isolated Converters using MOSFET and IGBT
... a switching devices and are used to switch the input signal to its output depending on the signal given to the ...The switching speed depends on the duty-cycle, which determines efficient performance of ...
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Non polar and complementary resistive switching characteristics in graphene oxide devices with gold nanoparticles : diverse approach for device fabrication
... resistive switching characteristics in graphene oxide (Go) have been extensively studied in recent years, whereas the study of non-polar and complementary switching is ...of switching behavior ...
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Bi stable resistive switching characteristics in Ti doped ZnO thin films
... The current–voltage measurements of pure ZnO sam- ple were also performed and presented in the supporting information in Additional file 1: Figure S2. The memory margin of the device with 2% Ti@-ZnO was much better than ...
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Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
... have shown that ZnO-based thin films have good resistive switching characteristics as well and.. are very promising for ReRAM application5[r] ...
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A Single Phase High Power Factor AC-DC converter with Soft Switching Characteristics
... ABSTRACT: This paper proposes an integrated high power factor ac-dc converter with soft switching characteristics. The circuit consists of a buck converter and a boost converter that integrates to form the ...
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A DUAL-POLARIZATION RECONFIGURABLE ANTENNA WITH BEAM SWITCHING CHARACTERISTICS FORS-BAND APPLICATIONS
... A simple polarization and beam switching reconfigurable antenna is presented in this paper. The circular patch with annular slot is used as the radiating element.The circular metallic conductor positioned below ...
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Dynamic Composite Resistive Switching Characteristics of Multiple Interconnected Memristors
... energy switching characteristics and nonvolatile ...voltage-dependent switching behavior by considering memristor as a single structural ...composite characteristics are investigated because ...
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Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross point memories
... Memory characteristics using GeO x film in a Cu/GeO x /Al structure were first reported by Beynon and El-Samanoudy in 1987 ...Resistive switching memory using GeO x material in different struc- tures such ...
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Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells
... sputtering under an Ar pressure of 2.0 Pa. Then, a poly- crystalline STO film was deposited on the Ti film by a pulsed laser deposition technique under a pressure of 2 × 10 -4 Pa at 600°C. Circular 100-nm-thick Au top ...
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SPICE model of Memristor with threshold switching characteristics
... decreased, i.e. the oxygen deficiency (dopants) moves from the top layer to bottom layer, due to this increases the doped region length. For negative applied voltage the resistance is increased and the doped region ...
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Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high Ge content Ge0 5Se0 5 solid electrolyte
... the switching material can be increased because of the re- activity of the Al, TiN, and W TEs during the deposition ...sistive switching characteristics were not ...resistive switching ...
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RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
... and ≈1,000 nm for Pt/CuO/Pt [42] are slightly closer and higher than our calculated values, likely owing to the use of different structures as well as materials. Further study may be needed to clearly understand these ...
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Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
... resistive switching characteristics, a positive formation process is used in this ...resistive switching mechanism also applies for the MOS structure; however, evolution of O 2 gas was not ...
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Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
... CuO/Pt [48] are slightly closer and higher than our cal- culated values, likely owing to the use of different struc- tures as well as materials. Further study may be needed to clearly understand these results. Figure 8a ...
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Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films
... In this work, bipolar resistive switching characteristics were demonstrated in the Pt/ZnO/Pt structure. Reliability tests show that ac cycling endurance level above 10 6 can be achieved. However, ...
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Characteristics of patients with depression initiating or switching antidepressant treatment: baseline analyses of the PERFORM cohort study
... treatment, switching has also been found to be associated with worse health- related quality-of-life outcomes in a longitudinal study of inpatients with MDD ...group switching antide- pressants was ...
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Experimental investigation on the surface degradation characteristics of oil impregnated pressboard due to lightning and switching impulses
... of switching impulses the discharges spread over the surface in an irregular way and it creates tracking patterns in a wider region compared to lightning ...
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Modeling style rotation: switching and re switching
... Furthermore, equations (12) and (14) can be aggregated over all stocks in each style using equations (4). These equations are fundamental to the BS Model. They show that the equilibrium prices of assets in the model ...
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