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wide band gap material

Wide Band Gap SemiconductorOptical Waveguide

Wide Band Gap SemiconductorOptical Waveguide

... novel wide band gap semiconductor waveguides and to investigate the possibility of constructing simple components for integrated optical ...other material systems such as ion diffused glasses, ...

187

Highly integrated power cell for high power wide band gap power converters

Highly integrated power cell for high power wide band gap power converters

... raw material cost, ability to integrate power converters inside machines and performance ...new wide bandgap semiconductor devices such as those utilising Silicon Carbide or Gallium Nitride, together with ...

5

Investigations of Structure Property Relationships of Hybrids and Wide Band Gap Semiconductors.

Investigations of Structure Property Relationships of Hybrids and Wide Band Gap Semiconductors.

... visible-light-absorbing material has poor conductivity (such as from poor charge mobility) then much of the energy absorbed would be lost to ...small band bending causing electrons and holes to take longer ...

104

STUDY OF PROPERTIES AND CHARACTERIZATION OF MNPs of ZnO FOR GAS SENSOR APPLICATIONS

STUDY OF PROPERTIES AND CHARACTERIZATION OF MNPs of ZnO FOR GAS SENSOR APPLICATIONS

... attracted wide attention due to their excellent luminescent properties ...of material and new properties of the material are ...the band gap is engineered by controlling the crystal ...

14

Boron Monochalcogenides; Stable and Strong Two-Dimensional Wide Band-Gap Semiconductors

Boron Monochalcogenides; Stable and Strong Two-Dimensional Wide Band-Gap Semiconductors

... Mechanical properties are among the most critical properties of any material for the design of nanodevices [44–54]. We finally study the mechanical properties of boron monochalcogenides predicted in this work. In ...

10

EFFECT OF WINDOW LAYER ON Cd (S, Se)
THIN FILM PHOTOELECTRODES FOR PEC
CELLS

EFFECT OF WINDOW LAYER ON Cd (S, Se) THIN FILM PHOTOELECTRODES FOR PEC CELLS

... the wide gap material and are absorbed in the low energy gap ...outer material with the larger band gap allows the lower energy photons to penetrate into the inner lower ...

7

Ultra-Wide Bandwidth Microstrip Monopole Antenna by Using Electromagnetic Band-Gap Structures

Ultra-Wide Bandwidth Microstrip Monopole Antenna by Using Electromagnetic Band-Gap Structures

... PMC material does not exist in nature, but an artificial magnetic conductor (AMC) can be realized from the property of the EBG structure ...with gap = 1 mm and splits from the center and ...

10

First principles study of structural and electronic properties of CdO

First principles study of structural and electronic properties of CdO

... has wide applications in solar cell [1], liquid crystal display [2] and gas sensor ...of wide band-gap compound semiconductor, has been highlighted in terms of being used as new type of ...

5

3-D Prismatic Packaging Methodologies for Wide Band Gap Power electronics Modules

3-D Prismatic Packaging Methodologies for Wide Band Gap Power electronics Modules

... WBG material could work at an elevated temperature than silicon de- ...current material systems in the power module have limitation on its maximum operation ...module material systems is updated. For ...

129

Spin Coated Tin Oxide Thin Film For Optical And Optoelectronic Material Applications

Spin Coated Tin Oxide Thin Film For Optical And Optoelectronic Material Applications

... on material structures created by thin-film deposition and characterization ...require wide band gap, high optical conductivity, high transparency and stability at higher temperature ...a ...

5

Two Photon Absorption in Nanostructure Wide Band Gap Semiconductor CdS Using Femtosecond Laser

Two Photon Absorption in Nanostructure Wide Band Gap Semiconductor CdS Using Femtosecond Laser

... After deposition the film, the material was cooled to room temperature gradually. There are several experi- mental parameters which are control the homogeneity and the thickness of the nanofilm. These parameters ...

6

Super wide band circular shaped antenna with a slit on the trapezoidal 
		ground plane

Super wide band circular shaped antenna with a slit on the trapezoidal ground plane

... FR4 material is used as a substrate with ...obtain wide band characteristics ground plane is modified to a trapezoid shape with a slit exactly below the microstrip feed line and a gap or ...

5

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure

... direct band-gap only in films with one or two layers[6,7], InSe has a direct-band gap over a wide range of layer ...indirect band gap semiconductor, it remains optically ...

11

Characterization of Wide Band Gap Power Semiconductor Devices.

Characterization of Wide Band Gap Power Semiconductor Devices.

... Power semiconductor devices are used to control the energy transfer of electrical and electronic systems. For last 5 decades Silicon (Si) was a dominant power semiconductor material. It had several advantages over ...

68

Growth, characterization, and functionalization of wide band gap oxide alloys

Growth, characterization, and functionalization of wide band gap oxide alloys

... The yield and rate of material sputtering can increase employing magnetrons that utilize strong magnetic and electric fields below the cathode. This traps free electrons, which follow helical paths around the ...

199

APPLICATIONS OF CHEMICALLY SYNTHESIZED CUS: PBO ALLOYED THIN FILMS IN MULTILAYER SOLAR CELLS AND OPTOELECTRONICS

APPLICATIONS OF CHEMICALLY SYNTHESIZED CUS: PBO ALLOYED THIN FILMS IN MULTILAYER SOLAR CELLS AND OPTOELECTRONICS

... energy band gap of ...These material alloy thin films prepared under this condition with wide energy band gap and high transparency in the visible region can be found useful in ...

12

Photo quantum Hall effect and light induced charge transfer at the interface of graphene/InSe heterostructures

Photo quantum Hall effect and light induced charge transfer at the interface of graphene/InSe heterostructures

... ated in two distinct regions: the area of the InSe flake between the two graphene electrodes where the in-plane electric field F ≠ 0 (region A) and in the InSe-capped graphene layers where F = 0 (region B). No ...

7

Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors

Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors

... We show results for optically excited semiconductor bulk, with a band gap in the equilibrium of 2.45 eV and typical parameters for ZnO. ZnO in either configuration [61,62,66–68] is a very promising ...

16

An Innovative Bidirectional DC-AC Converter to Improve Power Quality in a Grid-Connected Microgrid

An Innovative Bidirectional DC-AC Converter to Improve Power Quality in a Grid-Connected Microgrid

... The aim of the DC-DC stage is to generate a rectified sine wave. The inductance named L (see Figure 6) is calculated to neglect the current ripple (which is the result of the high switching frequency i.e., 300 kHz) in ...

18

Silicon Microwire Arrays for Photoelectrochemical and Photovoltaic Applications

Silicon Microwire Arrays for Photoelectrochemical and Photovoltaic Applications

... a wide variety of applications for understanding systems that semiconductor photo-absorbers with catalytic ...different material systems.[125] By varying the catalyst material, semiconductor ...

142

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