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Wide Band-gap Semiconductor

Two Photon Absorption in Nanostructure Wide Band Gap Semiconductor CdS Using Femtosecond Laser

Two Photon Absorption in Nanostructure Wide Band Gap Semiconductor CdS Using Femtosecond Laser

... Nanoparticle semiconductor materials with large nonlin- ear coefficients have attracted much attention in recent years ...the semiconductor nanoparticles depends strongly upon the particle size ...

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An Innovative Bidirectional DC-AC Converter to Improve Power Quality in a Grid-Connected Microgrid

An Innovative Bidirectional DC-AC Converter to Improve Power Quality in a Grid-Connected Microgrid

... The aim of the DC-DC stage is to generate a rectified sine wave. The inductance named L (see Figure 6) is calculated to neglect the current ripple (which is the result of the high switching frequency i.e., 300 kHz) in ...

18

Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors

Behavior of Floquet Topological Quantum States in Optically Driven Semiconductors

... in wide band gap semiconductor bulk as a correlated electronic system with a generalized Hubbard model and with dynamical mean field theory in the ...non-trivial band structure and in ...

16

First principles study of structural and electronic properties of CdO

First principles study of structural and electronic properties of CdO

... indirect wide band gap semiconductor, with valence band top at the point L in brillouin zone and conduction band bottom at the point Γ in brillouin zone, and that the dispersions ...

5

Optical Studies and Photovoltaic Performance of Nanocrystalline Titanium Dioxide Sensitized with Local Dye

Optical Studies and Photovoltaic Performance of Nanocrystalline Titanium Dioxide Sensitized with Local Dye

... common wide band gap semiconductor that is used in many applications including pigments, protective coatings and thin film optical devices such as photovoltaics [1, ...a wide ...

6

Periodic DFT Study of Molecular Crystals

Periodic DFT Study of Molecular Crystals

... energy band which can be considered as the upper valence band (VB) is formed by a number of sub-bands, the widths of which range from ...conduction band (CB) bottom shows a sharp peak around 3 eV ...

5

Wide Band Gap SemiconductorOptical Waveguide

Wide Band Gap SemiconductorOptical Waveguide

... novel wide band gap semiconductor waveguides and to investigate the possibility of constructing simple components for integrated optical ...on wide band gap materials such ...

187

Investigation of Europium Doped Wide Band Gap Oxides and an Annealing Study of the Amorphous Oxide Semiconductor - Indium Gallium Zinc Oxide

Investigation of Europium Doped Wide Band Gap Oxides and an Annealing Study of the Amorphous Oxide Semiconductor - Indium Gallium Zinc Oxide

... increasing band gap. Therefore, wide-band gap semiconductors are attractive hosts for RE ...of wide band gap semiconductors when compared with other semiconductors ...

115

Growth, characterization, and functionalization of wide band gap oxide alloys

Growth, characterization, and functionalization of wide band gap oxide alloys

... tronegative atom) [14, 17, 118]. These induce a single low lying conduction bands at the Γ-point, leading to n-type characteristics without intentional doping and the following difficulties for the realization of p-type ...

199

STUDY OF PROPERTIES AND CHARACTERIZATION OF MNPs of ZnO FOR GAS SENSOR APPLICATIONS

STUDY OF PROPERTIES AND CHARACTERIZATION OF MNPs of ZnO FOR GAS SENSOR APPLICATIONS

... attracted wide attention due to their excellent luminescent properties ...the band gap is engineered by controlling the crystal size, leading to a tunable band edge ...

14

Highly integrated power cell for high power wide band gap power converters

Highly integrated power cell for high power wide band gap power converters

... The main driving force for this development, given the chosen circuit topology, was to create an optimized commutation circuit with a suitable innovative layout to minimize the commutation loop inductance. This is ...

5

Characterization of Wide Band Gap Power Semiconductor Devices.

Characterization of Wide Band Gap Power Semiconductor Devices.

... Power semiconductor devices are used to control the energy transfer of electrical and electronic systems. For last 5 decades Silicon (Si) was a dominant power semiconductor material. It had several ...

68

Spin Coated Tin Oxide Thin Film For Optical And Optoelectronic Material Applications

Spin Coated Tin Oxide Thin Film For Optical And Optoelectronic Material Applications

... semiconductor with wide energy band gap (3.7 eV) [6] The methodology employed for thin-film deposition ranges from very simple and cheap to complex and very expensive depending on the ...

5

Structural And Optical Properties Of Zinc Oxide Nanoparticles Synthesize Via Sol Gel Auto Combustion Method

Structural And Optical Properties Of Zinc Oxide Nanoparticles Synthesize Via Sol Gel Auto Combustion Method

... Zinc oxide is an inorganic compound with the chemical formula of ZnO. Zinc oxide possesses special properties such as high chemical stability, high electrochemical coupling coefficient, good radiation absorption, and ...

24

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure

Magnetotransport and lateral confinement in an InSe van der Waals heterostructure

... direct band-gap only in films with one or two layers[6,7], InSe has a direct-band gap over a wide range of layer ...indirect band gap semiconductor, it remains ...

11

Investigations of Structure Property Relationships of Hybrids and Wide Band Gap Semiconductors.

Investigations of Structure Property Relationships of Hybrids and Wide Band Gap Semiconductors.

... new semiconductor materials has garnered significant and varied interest across the fields of ...chemistry, semiconductor materials have been investigated for everything from switches to ...photocatalysts, ...

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Compositional Plane of a New Wide Gap Solid Solution Semiconductor CaPbSeS and Epitaxial Thin Film Growth of CaSe

Compositional Plane of a New Wide Gap Solid Solution Semiconductor CaPbSeS and Epitaxial Thin Film Growth of CaSe

... The solubility limit at 1273 K varies with respect to the Se concentration y, taking a minimum limit of 0.04 at y ¼ 0:8 and a maximum of 0.24 at y ¼ 0. It is found that the system can be lattice-matched to PbS and InP. ...

5

APPLICATIONS OF CHEMICALLY SYNTHESIZED CUS: PBO ALLOYED THIN FILMS IN MULTILAYER SOLAR CELLS AND OPTOELECTRONICS

APPLICATIONS OF CHEMICALLY SYNTHESIZED CUS: PBO ALLOYED THIN FILMS IN MULTILAYER SOLAR CELLS AND OPTOELECTRONICS

... energy band gap of ...with wide energy band gap and high transparency in the visible region can be found useful in passive applications as dazzling coating, cold and heat windows, solar ...

12

Boron Monochalcogenides; Stable and Strong Two-Dimensional Wide Band-Gap Semiconductors

Boron Monochalcogenides; Stable and Strong Two-Dimensional Wide Band-Gap Semiconductors

... Abstract: In this short communication, we conducted first-principles calculations to explore the stability of boron monochalcogenides (BX, X = S, Se or Te), as a new class of two-dimensional (2D) materials. We predicted ...

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PV Grid Tie System Energizing Water Pump

PV Grid Tie System Energizing Water Pump

... The stator winding is supplied with balanced three- phase ac voltages, which produces induced voltages in the rotor windings due to transformer action. The distri- bution of stator windings is arranged, so that there is ...

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