[PDF] Top 20 Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells
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Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells
... internal quantum efficiency by reducing the quantum confined Stark effect (QCSE) and, in addition, they could have enhanced light extraction ...of nanorods are fabricated then, depending on the pitch and ... See full document
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Structural and optical emission uniformity of m-plane InGaN single quantum wells in core-shell nanorods
... of InGaN/GaN core − shell nanorods have highlighted the challenge and importance of controlling the long-range homogeneity along the length of the ...wide InGaN/GaN SQWs of uniform ... See full document
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Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
... example, the measured PL decay curves may deviate from single-exponential decay. It is worth noted that neither shallow nor deep localized states are located in single energy level but have certain ... See full document
6
Temporally and spatially resolved photoluminescence investigation of (11(2)over-bar2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates
... so-called quantum-confined Stark effect ...in InGaN/GaN material system as a result of the large lattice- mismatch between InGaN and ...current InGaN-based emitters suffer from a ... See full document
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Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
... in InGaN/GaN QWs are absent, as discussed above. Here, in the single-particle picture and consistent with Rigutti et ...c-plane InGaN/GaN QWs with independently localized carriers or if ... See full document
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Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
... the optical properties of InGaN/GaN ...a GaN template grown by the ELO is desirable because it has a designed distribution in the dislocation ...luminescence properties, cathode ... See full document
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Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2 Grown GaN Barrier
... the InGaN/GaN stack. Quantum barriers (QBs) grown at el- evated temperature [20, 21] and growth interruption after QWs [12, 22] are widely used to improve the morphology of InGaN/GaN ... See full document
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Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
... of GaN bar- rier represents a compromise between the crystal quality of GaN and the In content in InGaN ...of GaN QB can result in poor crystal quality of MQWs [12, ...and GaN QB growth ... See full document
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Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
... Possible contributions to the spectral changes from the QCSE and from band filling were investigated by varying the beam current, and hence the densities of induced electron-hole pairs, at a constant accelerating voltage ... See full document
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Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... above single expo- nential decay ...exist multiple recombination centers in the ...PL properties, we used the simplest model to extract an average PL lifetime for each sample, which may reflect the ... See full document
7
Study of GaN-based Materials for Light-emitting Applications
... with InGaN/GaN quantum ...an InGaN well sandwiched between GaN barriers), the spinodal may perhaps be suppressed relative to the unstrained ...in InGaN/GaN structures ... See full document
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Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities
... superior optical confinement, due to the absence of higher-order radial modes ...radial optical confinement of tubular geometry with the integration of an active region, either axially or radially, higher ... See full document
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The effect of free standing GaN substrate on carrier localization in ultraviolet InGaN light emitting diodes
... We investigate the influence of the FS-GaN substrate on the performance of UV-LEDs grown atop by AP- MOCVD. The micro-Raman shift peak mapping image indicated that the strain-free GaN-based epilayer is ... See full document
7
Finite-Difference Time-Domain Simulations on Overgrown InGaN/GaN Multiple Quantum Well (MQW) Light Emitting Diode (LED).
... in GaN-based blue light emitting diode device growth techniques have not only led to a substantial progress in their internal quantum efficiency but also to the improvement of their light extraction ...an ... See full document
86
Intersubband absorption properties of high Al content Alx Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
... the GaN/AlN SL interlayer is the same as the AlGaN interlayer in sample A; the GaN/AlN SL inter- layer is still under elastic relaxation, and the stress only makes dislocations ... See full document
6
Enhanced Light Emission due to Formation of Semi polar InGaN/GaN Multi quantum Wells
... using GaN substrate [8] and lateral epitaxial overgrowth ...101) quantum well (QW) grown in the sidewall of the V-shaped pits is attracting attentions [10–12] because, unlike conventional (0001) QW, it has ... See full document
6
Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities
... superior optical confinement, due to the absence of higher-order radial modes ...radial optical confinement of tubular geometry with the integration of an active region, either axially or radially, higher ... See full document
12
Picosecond acoustics in single quantum wells of cubic GaN/(Al,Ga)N
... The simulations show that the photoelastic response exceeds the interface displacement effect in all cases. This is most notably the case at a probe wavelength of λ ¼ 370 nm, where the latter contribution is especially ... See full document
6
Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing
... Fig. 1a shows RBS/C spectra of the sample after the implantation to different total N fluences. Remarkably, the In signal does not show any shift to higher energies even for the highest fluence, what confirms that there ... See full document
17
Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods
... the InGaN active regions, ...corresponding InGaN alloy ratio is still far too low to emit light in the RYG region of the visible light spectrum, when compared to theoretical calculations and experimental ... See full document
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