[PDF] Top 20 Transport properties of modulation-doped Si/SiGe quantum well structures
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Transport properties of modulation-doped Si/SiGe quantum well structures
... entary quantum m echanical description of the m odulation- doped n- and p-type ...electronic transport properties and thus establish a qualitative and quantitative characterization in order to ... See full document
283
Magnetotransport phenomena in modulation doped n-channel Si/Si0.7Ge0.3 quantum well structures
... not well suited w hen combined w ith n-channel FETs employing a p u re Si ch an n el for ...a SiGe alloy ...orphic SiGe channels, w hich have show n low hole m obilities, new efforts have been ... See full document
190
Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures
... consecutive transport zones under an applied bias for our quantum cascade ...the Si/SiGe super lattice, we modify the position and the size of these ...the transport zone, which ... See full document
6
Transport properties for pure strained Ge quantum well
... germanium modulation doped structure grown by LEPE-CVD result in a high hole mobility of 120,000 cm 2 /Vs at 2K with a sheet density of ...to Si-Ge interdiffusion at high temperature at the ... See full document
189
Electric field domains in p-Si/SiGe quantum cascade structures
... Hole transport is described via “upstream” and “downstream” scattering between quantized subbands in neighboring wells, which are calculated using the 6 6 method including the full anisotropy of the heavy hole and ... See full document
8
Electron Subband Structure and Mobility Trends in P-n Delta-Doped Quantum Wells in Si
... Delta-doped quantum wells in Si are ideal structures to study the transport properties of ultra dense two dimensional electron gases (2DEG) [9, 10] Important parameters are the ... See full document
7
Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas
... epitaxial Si technology. Recently, epitaxially grown layers of Ge grown on SiGe on a standard Si(001) sub- strate have been shown to have extremely high room tempera- ture hole mobility of up to 4500 ... See full document
5
Magnetotransport study on as grown and annealed n and p type modulation doped GaInNAs/GaAs strained quantum well structures
... electronic transport properties of n- and p-type N-free and N-containing alloys using magnetotransport ...of well width and/or decrease in hole ... See full document
6
Electron transport in n-doped Si/SiGe quantum cascade structures
... electron transport in n-Si/ SiGe cas- cade or superlattice structures, using the rate equations ap- proach and tight-binding expansion, taking the coupling with two nearest-neighbor ... See full document
7
n-Si/SiGe quantum cascade structures for THz emission
... THz quantum cascade lasers, Si/SiGe quantum cascade structures are attracting considerable attention as a very promising technology for the same ...the Si/SiGe system, the ... See full document
15
Quantum Supercurrent Transistors in Silicon Quantum Wells Confined by Superconductor Barriers
... boron doped diffusion profile and its depth that was equal to 8 nm in the presence of thin oxide overlayer ...The Si-QWs confined by the δ-barriers heavily doped with boron inside the B doped ... See full document
18
High Temperature Thermoelectric Measurement of B Doped SiGe and Si Thin Films
... Figure 6(a) shows the Seebeck coefficient of this Si film measured by the static and dynamic data acquisition method. During the Seebeck coefficient measurement, air flow cool down one side of sample and the both ... See full document
7
Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector
... electrical properties of the structures was analyzed from the simulation ...different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large ... See full document
6
A study of photomodulated reflectance on staircase like, n doped GaAs/Alx Ga1−xAs quantum well structures
... PR and PL measurements were carried out on two differ- ent MQW structures at room temperature. A tunable monochromatic probe light was provided by a 100-W tungsten lamp, dispersed by a single grating monochrom- ... See full document
5
Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
... The Si capping layer grown at a low temperature of 300°C on QDs shows similar surface morphologies [5] with a slight change in shape from dome to mound, as shown in Figure 1a and ...of Si cap- ping layer ... See full document
5
Electron Transport and Device Applications of Nanocrystalline Silicon
... electron transport properties and device applications.For fabricating Si nanodots we have studied three different ...(nc) Si film with the size of the grains down to a few nanometer. The ... See full document
18
Theory and design of quantum cascade lasers in (111) n -type Si/SiGe
... In this paper, we compare the strain tensors for (001) and (111) oriented layers. We show that (111) oriented ∆ valleys offer larger usable band offsets and lower quanti- zation effective mass than the (001) case and ... See full document
8
Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P i n Infrared Photodetectors for 1 3 1 55 μm Optical Communication
... also described thoroughly the behavior of total dark cur- rent density with reverse bias application. Note that the resulting reverse bias current and the current conducted through the shunt resistance overlap each other ... See full document
16
First Principles Investigation of the Effect of M Doped (M = Zr, Hf) TiCoSb Half Heusler Thermoelectric Material
... lowest energy band gap value of 0.971 eV. Besides, the amplitudes of the density of states in the region of the valence bands for M-doped systems show a similar but slightly higher value than Ti- CoSb. Those ... See full document
9
Properties of Si quantum dots
... small Si clusters forming which would increase the number of interfacial Si-O bonds present in the film or by a few large Si clusters forming and the majority of Si-O bonds being formed in the ... See full document
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