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Al(Ga)As

Dependence of the electrical and optical properties on growth interruption in AlAs/In0 53Ga0 47As/InAs resonant tunneling diodes

Dependence of the electrical and optical properties on growth interruption in AlAs/In0 53Ga0 47As/InAs resonant tunneling diodes

... ruption. Though the electrical properties showed anoma- lous growth interruption dependence, we found an optimum growth condition for increasing the current- voltage [ I-V ] characteristics ’ symmetry of RTDs. We also ...

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Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High Index GaAs Planes

Structural and Optical Properties of Diluted Magnetic Ga1−xMnxAs–AlAs Quantum Wells Grown on High Index GaAs Planes

... We have studied the properties of Ga 0.999 Mn 0.001 As–AlAs QWs grown on semi-insulating GaAs substrates with various orientations. AFM measurements indicate that Mn distribu- tion is nearly homogenous for the ...

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Polariton states bound to defects in GaAs/AlAs planar microcavities

Polariton states bound to defects in GaAs/AlAs planar microcavities

... We report on polariton states bound to defects in planar GaAs/AlAs microcavities grown by molecular beam epitaxy. The defect types relevant for the spatial polariton dynamics in these struc- tures are cross-hatch ...

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Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

... were deposited. For the InAs QDs layers, we deposited nominally 2.3 monolayers, which correspond to 0.69 nm thick. Since the InAs QDs are formed in the Stranski- Krastanov growth mode, this leads to a wetting layer of ...

5

Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells

Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells

... GaAs/ AlAs MQWs has already been investigated theoretically 9 and experimentally by far- infrared absorption 7,10 and photoluminescence 9,11 ...GaAs/ AlAs structures is of particular importance for the ...

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Suppression of cross-hatched polariton disorder in GaAs/AlAs microcavities by strain compensation

Suppression of cross-hatched polariton disorder in GaAs/AlAs microcavities by strain compensation

... sponding to the different samples is shown in Fig. 2(a). Resonant transmission was measured in order to deter- mine the average density of cross-hatches. The samples were held in a bath cryostat at a temperature of T ¼ ...

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Rolled Up Nanotech: Illumination Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

Rolled Up Nanotech: Illumination Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

... the AlAs layer, which suggests that the etch suppression is a dynamic process that depends on the access of HF to the AlAs layer and the exchange of products and reactants in this ...

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Band Structure, Metallization and Superconducting Transition Of Group III V Semiconductors AlP And AlAs Under High Pressure

Band Structure, Metallization and Superconducting Transition Of Group III V Semiconductors AlP And AlAs Under High Pressure

... and AlAs compounds. AlP and AlAs are characterized by indirect band ...and AlAs are used as an active material in the manufacture of opto electronic devices and also in LEDs ...particular AlAs ...

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High-performance GaAs/AlAs superlattice electronic devices in oscillators at frequencies 100–320 GHz

High-performance GaAs/AlAs superlattice electronic devices in oscillators at frequencies 100–320 GHz

... GaAs/ AlAs and InGaAs/InAlAs material systems have already been demonstrated as millimeter-wave oscillators in both the fun- damental and higher harmonic modes, 3,4,6–10 As examples, RF output powers of more than ...

6

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature

... were used to pull apart direct excitons formed inside coupled quantum wells. Such procedures often broaden the excitonic spectra and thereby compromise the nature of these excitons. In contrast, in this study, applied ...

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Survey Study Greenbelt Species of Natural Triangulasi Alas Purwo National Park (TN-AP) Banyuwangi Regency, East Java, Indonesia

Survey Study Greenbelt Species of Natural Triangulasi Alas Purwo National Park (TN-AP) Banyuwangi Regency, East Java, Indonesia

... The author would like to express their gratitude to Deparment Biology FMIPA Brawijaya University for field practicum of Biology Students and FMIPA and DPP/SPP financial supports during our research mangrove and sand ...

5

The revised Appreciation of the Liberal Arts Scale (ALAS-R): Development, reliability and validity

The revised Appreciation of the Liberal Arts Scale (ALAS-R): Development, reliability and validity

... the ALAS-R reported they were less materialistic, had greater life satisfaction, and were better able to defer gratification (see Table ...the ALAS-R were correlated with student openness to experience, ...

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Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells

Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells

... ~PL!, and photoluminescence excitation experiments. 10–14 However, for the Be d -doped GaAs/AlAs multiple-quantum wells ~MQWs! with doping at the well center, there have been few reports of either experimental or ...

5

Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

... first AlAs barrier were grown using the standard MBE growth mode at the high temperature of 600 ...and AlAs barriers. Migration-enhanced epitaxy (MEE) mode was used for AlAs deposition at the ...

7

Denk, Petra
  

(2000):


	Growth and Electronic Properties of AlAs/GaAs Lateral Superlattices: from 2D to 1D.


Dissertation, LMU München: Fakultät für Physik

Denk, Petra (2000): Growth and Electronic Properties of AlAs/GaAs Lateral Superlattices: from 2D to 1D. Dissertation, LMU München: Fakultät für Physik

... Growth and Electronic Properties of AlAs/GaAs Lateral Superlattices : from 2D to 1D.. submitted by.[r] ...

154

Supporting heterogeneous agent mobility with ALAS

Supporting heterogeneous agent mobility with ALAS

... 2. To include tools for agent code regeneration, and enable migration across SOM instances implemented using different programming languages. Since this original proposal, however, the design goal of ALAS has been ...

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Interaction between succinyl CoA synthetase and the heme biosynthetic enzyme ALAS E is disrupted in sideroblastic anemia

Interaction between succinyl CoA synthetase and the heme biosynthetic enzyme ALAS E is disrupted in sideroblastic anemia

... In this report, we present novel evidence for the association of ALAS-E with SCS-βA. Although some protein complex formation has been previously sug- gested for enzymes in the heme biosynthetic pathway (44, 45), ...

9

ALAS-KA: A learning analytics extension for better understanding the learning process in the Khan Academy platform

ALAS-KA: A learning analytics extension for better understanding the learning process in the Khan Academy platform

... by ALAS-KA try to implement the same types of graphs for each of the presented indicators where ...from ALAS-KA ...by ALAS-KA but have not been integrated with ALAS-KA yet, but we plan to do ...

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Band structure calculation of the semiconductors and their alloys by Tight Binding Model using SciLab

Band structure calculation of the semiconductors and their alloys by Tight Binding Model using SciLab

... Abstract—The tight binding model is one of the strong theoretical techniques to calculate the band gap of the materials. The band structures of some semiconductors and the semiconductors made by their combination is ...

8

Alas, the words in those two preceding

Alas, the words in those two preceding

... It is illegal to make unauthorized copies of this article, forward to an unauthorized user or to post electronically without Publisher permission.... benefit of the interests of their be[r] ...

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