Field-effect transistors (FETs)
High Temperature Stable Operation of Nanoribbon Field Effect Transistors
... bon field-effect transistors can be used for stable high- temperature ...nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron ...
5
Influence of post annealing on the off current of MoS2 field effect transistors
... etc.), are widely used recently for fabricating next- generation nanoelectronics [1-10]. This is because of the high electron mobility of 2D materials, compared with the original bulk material. Typically, graphene shows ...
6
Fabrication and electrical properties of MoS2 nanodisc based back gated field effect transistors
... back-gated field effect transistors with Ni as contact ...The transistors have good output characteristics and exhibit typical n-type behavior, with a maximum transconductance of approximately ...
5
Uniformly Nanopatterned Graphene Field Effect Transistors with Enhanced Properties
... We have successfully fabricated and characterized highly uniform nanopatterned graphene (NPG). Thin anodized aluminum oxide nanomask was prepared by facile self-assembly technique without using polymer buffer layer, ...
7
Hysteresis modeling in ballistic carbon nanotube field-effect transistors
... nanotube field-effect ...nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the ...
7
Development of a deep submicron fabrication process for tunneling field effect transistors
... The requirements placed upon next-generation devices include high on-state current, low power supply voltages, and low subthreshold swing. Tunneling Field Effect Transistors (TFETs) have been of ...
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An Approach to Decrease Dimensions of Field Effect Transistors
... manufacture field-effect transistors with smaller in direction source-drain and into another ...obtain field-effect transistors with smaller ...
6
Naphthalocyanine thin films and field effect transistors
... In this paper we investigate the growth of Nc thin films by sublimation and show that the resulting organic layers can be used to form p-type field effect transistors which can be operated under both ...
17
All-GaN Integrated Cascode Heterojunction Field Effect Transistors
... Abstract — All-GaN integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine ...
12
Progresses in organic field-effect transistors and molecular electronics
... Organic field-effect transistors based on small molecules and polymer semiconductors will be extensively applied in electronic paper, RFID tags, OFET driving OLEDs [58] ...
16
I-V characteristics model for Carbon Nanotube Field Effect Transistors
... [2] B.Aissa, D. Therriault, “Electrical transport properties of single wall carbon nanotube/polyurethane composite based field effect transistors fabricated by UV-assisted direct-writing technology”, ...
5
Terahertz Frequency Comb in Graphene Field-Effect Transistors
... Graphene Field-effect transistors (GFETs) are excellent candidates for all- electric, low-power radiation sources and detectors based on integrated circuit ...
5
Nanoparticles of Cu2ZnSnS4 as performance enhancing additives for organic field-effect transistors
... emitting field effect transistors, 32 whilst Q-ZnO has been applied as a component in a hybrid OFET bilayer device fabricated with P3HT as the organic ...
7
Ambipolar Organic Field Effect Transistors Based on Indigo Derivatives
... In the recent years, organic semiconductors have attracted much attention because of low-cost and easy fabrication to large-area and mechanically flexible substrates that are now used as active elements in optoelectronic ...
13
Review on Tunnel Field Effect Transistors (TFET)
... Semiconductor Field Effect Transistor), reduction in supply voltage slow down the sub threshold swing which cannot be lowered by ...(Tunnel Field Effect Transistors) is promising ...
6
Characterisation and application of microwave field effect transistors
... A tuning technique on microstrip was developed to overcome the above problems and allow the amplifier performance of GaAs FETs at X-band frequencies to be explored. This was first used to enable the amplifier ...
224
Improved performance of InSe field effect transistors by channel encapsulation
... In conclusion, PMMA has been used for the channel encapsulation to improve the performance of back-gated InSe FETs in air. A number of devices with InSe channel of different thicknesses have been fabricated. All ...
12
High-performance, low-operating-voltage organic field-effect transistors with low pinch-off voltages
... We consider that TCNE layer not only changed the film morphology but also had strong effects on the electrical properties of grain boundaries. It has been recognized quite early that the localization of electrons and/or ...
28
All-electric all-semiconductor spin field-effect transistors
... magnetic field creates a link between the magnetic moment of the particle (spin) and the electric field acting upon it, offering a route for fast and coherent electrical control of spin ...
18
Low noise narrow band amplification with field effect transistors
... The noise factor F is defined as the ratio of the total output noise power in the amplifier load to the noise power at the output due to the thermal noise of the source resistance... The[r] ...
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