GaAs-AlGaAs quantum-well structure
Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... a quantum well structure, the two dimensional nature of the density of states changes the gain ...a quantum well is constant in the whole ...as well, causing a considerable ...
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Development of AlGaAs /GaAs/ AlGaAs Step Quantum well to produce Tunable Photo Detector and Electro Absorption Modulator for noise reduction
... Asymmetric Quantum well with AlGaAs /GaAs/ AlGaAs ...and Quantum-confined Stark effect ...a quantum well structure and a type using a bulk Semiconductor ...
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Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes
... physical structure including DC, AC, transient, frequency ...specified structure into a two or three-dimensional mesh grid and solves the descritised and linearised Poisson’s equation, the carrier ...
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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
... A GaAs quantum dot (QD) array embedded in a AlGaAs host material was fabricated using a strain-free approach, through combination of neutral beam etching and atomic hydrogen-assisted molecular beam ...
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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device
... InGaAs/AlInAs structure so that the growth could be lattice matched to InP ...a GaAs/AlGaAs structure, which is a material more commonly used in com- pound ...operational quantum cas- ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... quantum dot structure. On the other hand, as we show below, the precise knowledge of the elec- tron wavefunction F (r, z) is not required for the calculations of the hyperfine shifts (based on Supplementary ...
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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
... to structure inversion asymmetry and the Dresselhaus SO coupling due to bulk inversion asymmetry in the compounds cause electron spin relaxation and decoher- ence through spin precession of carriers with finite ...
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Micro photoluminescence of GaAs/AlGaAs triple concentric quantum rings
... In conclusion, we presented the optical characteriza- tion, also time resolved, of a single and of an ensemble TCQRs. The TCQRs are optically active, with a band centered around 1.56 eV. The theoretical calculations, ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... fully quantum de- scription of the QD electron-nuclear spin system, which is still ...existing quantum models [5, 12, 13, 16] employ significant simplifications ...microscopic structure of the ...
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Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field
... the structure growth axis especially as the electric field is necessary to provide the resonant tunneling pumping of the LLs of the upper ...the GaAs/AlGaAs quantum well on the applied ...
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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... an asymmetric QW with the inversion-asymmetric con- fining potentials, the effective g-factor is dependent on the direction of an applied in-plane magnetic field, which results in the anisotropic Zeeman splitting [14]. ...
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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... hertz quantum cascade lasers has made a huge impact on Terahertz ...simple quantum well, pumped by a lateral current, as a source of incoherent terahertz ...like GaAs/AlGaAs, the ...
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Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... the structure region excited by the electron ...the structure under study contains regions with a strong electric field ...for AlGaAs/ GaAs laser heterostructures with InGaAs quantum ...
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Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... electronic structure and dynam- ...the structure and both the Schrödinger and Poisson equations as well as the system of scattering rate equations ...the structure can be ...
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Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
... Nowadays, spintronics has attracted enormous research interest since it promises to revolutionize electronics and computing by making explicit use of the electron’s spin in addition to its charge [1–3]. The spin-orbit ...
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Ultrashort electromagnetic pulse control of intersubband quantum well transitions
... ductor quantum well with electromagnetic pulses with a duration of few cycles and even a single ...double GaAs/AlGaAs quantum well structure, taking into account the ...
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Droplet etching of deep nanoholes for filling with self aligned complex quantum structures
... in AlGaAs surfaces and subsequent hole filling with ...like quantum dot molecules ...high quantum dot uniformity and narrow luminescence linewidth, which are often found in applications, set limits ...
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Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... semiconductor quantum dots: In- GaAs/GaAs and ...InP/GaInP quantum dots ...interface GaAs/AlGaAs dots are generally found to be smaller (up to ∼40 ...in GaAs/AlGaAs ...
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Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers
... the structure must be asymmetric, in that the QWs must not be of the same thickness (this applies for a three-level system, as discussed in more detail in Section ...supersymmetric quantum mechanics ...
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Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
... of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs ...heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for ...
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