GaN/AlGaN quantum wells
Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
... QWs, well width fluctuations of the dimensions observed in InGaN/GaN QWs are absent, as discussed above. Here, in the single-particle picture and consistent with Rigutti et al., 17 the electron charge density does ...
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Cubic GaN/AlGaN based quantum wells optimized for applications to tunable mid-infrared photodetectors
... of GaN and related materials make them particularly suitable for intersubband (ISB) based ...femtoseconds, GaN/Al(Ga)N planar nanostructures are becoming the foremost system for ISB devices operating at ...
9
GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices
... substrate. The optical and structural characterizations of the MQW structure are compared with a similar structure grown on sapphire. Scanning transmission electron microscopy and atomic force microscopy images show that ...
20
Frequency up conversion in nonpolar a plane GaN/AlGaN based multiple quantum wells optimized for applications with silicon solar cells
... of GaN/AlGaN multiple quantum well based up-converter for silicon solar ...step quantum wells by use of the genetic algorithm for global ...In quantum well structures, the ...
8
Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
... called quantum-confined Stark effect ...of AlGaN LEDs or blue InGaN/GaN LEDs, for example increasing hole doping [30] or improving carrier tunneling [31], QCSE have been prove to be negative to ...
6
Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well
... in quantum wells ...or quantum cascade laser (QCL) from its first realization [2] has demonstrated an impressive and rapid development extending the emission wavelengths from the mid-infrared to the ...
17
Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ -doping to the n-type GaN layer or ...
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Intersubband absorption properties of high Al content Alx Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
... the GaN/AlGaN heterostructure will surely influence ISB intensity since ISB absorption strongly relies on the net carrier density in the ...graded AlGaN films grown on uninten- tionally doped ...
6
Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities
... strained AlGaN/GaN and lattice-matched AlInN/GaN superlattices grown by plasma-assisted molecular-beam epitaxy as a function of Si-doping profile with and without δ ...For AlGaN/GaN, we ...
11
A scattering rate approach to the understanding of absorption line broadening in near-infrared AlGaN/GaN quantum wells
... Interface roughness will result in a variation of quantum well width in the transverse direction. The broadening from this long-range interface roughness can be modelled by calculating the various transition ...
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“Smart Design” of Quantum Wells and Double Quantum Wells Structures
... (quantum wells and superlattices) bas- ed on the combination of Inverse Scattering Problem Me- thod and the direct solution of the eigenvalue problem for the Schrödinger equation with reconstructed ...
9
TCAD simulation and modeling of AlGaN/GaN HFETs
... in AlGaN/GaN HFET technology can be used to reduce the space charge effects and nonlinear source resistance, which were discussed in Chapter ...of AlGaN/GaN HFETs, some modifications to the ...
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Investigation of quadratic electro optic effects and electro absorption process in GaN/AlGaN spherical quantum dot
... of GaN/AlGaN spherical quantum dot parameters, different behaviors are ...proposed GaN/ AlGaN quantum dot nanostructure from quadratic electro- optic effect and ...
6
Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaN quantum wells under electrical injection
... [3] Ziwen Yang, Rui Li, Qiyuan Wei, Tao Yu, Yanzhao Zhang, Weihua Chen, and Xiaodong Hu, “Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field,” ...
21
Exciton properties in zincblende InGaN GaN quantum wells under the effects of intense laser fields
... and quantum well wires (QWWs) [21,22], the measurement of zero-resistance states in two- dimensional electron gases under microwave radiation [23], terahertz resonant absorption in QWs [24], and Floquet-Bloch ...
8
Schottky Barrier GaN FET Model Creation and Verification using TCAD for Technology Evaluation and Design.
... design. GaN based MOSFET is possible to achieve competitive performance comparing with GaN HEMT in high power and high frequency applications by using the recently available techniques to achieve low ...
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Performance Analysis of doped and undoped AlGaN/GaN HEMTs
... The heterostructure is formed when two different band gap materials are grown one above the other. At the junction a thin sheet of electrons called two dimensional electron gas (2DEG) is formed if the thickness of the ...
5
Enhanced Light Emission due to Formation of Semi polar InGaN/GaN Multi quantum Wells
... 7. Wang JX, Zhang N, Liu Z, Si Z, Ren P, Wang XD, Feng XX, Dong P, Du CX, Zhu SX, Fu BL, Lu HX, Li JM (2013) Reduction of efficiency droop and modification of polarization fields of InGaN-based green light-emitting ...
6
Design, fabrication and characterization of gallium nitridebased circular schottky diode for hydrogen sensing
... Intelligent Quantum (IQ) chip has been proposed as the promising electronic device for the ubiquitous network society environment ...scale quantum processors and memories are integrated on this chip but ...
22
A Physics-Based AlGaN/GaN HFET Compact Model for Implementation in Circuit Simulators.
... Theoretical investigations of electron dynamics using Monte Carlo techniques have de- termined velocity-field characteristics associated with GaN materials. These theoretical simulations show that the electron ...
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