high-power switching applications

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Abstract: GaN power switching devices are promising candidates for high switching frequency and high

Abstract: GaN power switching devices are promising candidates for high switching frequency and high

For electric vehicle (EV) applications, Toyota reported a new SiC power converter for use in automotive power control units (PCU). With this new converter, the fuel efficiency improves by 10% compared with the Si-based EV. This new technology also enables 80% size reduction in the PCU with respect to the previous version. For medium voltage applications, Cree, Inc. recently developed 10 kV, 120 A SiC power MOSFETs and 1700V Schottky diodes which can replace conventional IGBTs and Si-based diodes. At 20 kHz, the switching loss of a SiC MOSFET is 18 times lower than that of a Si-based IGBT and the conduction loss is almost half [2]. In the case of GaN power devices, the product availability is less than that of SiC, especially in high voltage applications due to its inherent material characteristic (high electron mobility) and more expensive manufacturing cost. However, GaN devices are more suitable for 600 V or less voltage level and lower power applications than SiC due to its high electron mobility and size advantage. One of the GaN device manufacturers, Efficient Power Conversion (EPC) Corporation released a 300 V, 2.7 A enhanced mode power transistor, which can be applied in various applications where high frequency switching is essential. Regarding concern for the price of WBG devices, they are expected to be cheaper than Si devices in 2016 and this will dramatically boost the transition from Si devices to WBG devices. For applications lower than 200 V, there are abundant options of GaN devices that can be applied to the MHz-level DC- DC converters.
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Performance Analysis of phase shifted SPWM Technique for Three Phase Diode Clamped Three Level Inverter

Performance Analysis of phase shifted SPWM Technique for Three Phase Diode Clamped Three Level Inverter

In the recent past the multilevel power converters have drawn a tremendous interest in the field of high voltage and high power applications field in industries. The multilevel inverter approach allows the use of high power and high voltage electric motor drive systems. Using the multilevel inverter concept, a divide and conquer approach allows more flexibility and control over the discrete components that makeup the system. In the researches on multilevel inverters, their corresponding PWM control strategies are the emerging research areas. In high power and high voltage applications, the two level inverters, however, have some limitations in operating at high frequency mainly due to switching losses, dv/dt and di/dt stresses in power semiconductor devices and constraint of the semiconductor power device ratings. For high voltage applications two or more power devices can be connected in series to achieve the desired voltage ratings and in parallel to achieve the current ratings. Multilevel inverters can increase the power by the series connection of power semiconductor devices. Working
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Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Field Programmable Gate Arrays have been used for high performance computing with a great success at large performance speedups. The processors are capable of being reconfigured with a new design to meet multiple needs and are efficient at parallel tasks within the limitations of the hardware blocks available on a FPGA processor. Generally FPGAs are more complex to use, as a specific design must be mapped first before being used as a coprocessor. Often times this can be a daunting task that is quite difficult. Any modifications may cause the entire design to have to be modified. With these limitations, they are still capable of huge performance gains within a certain scope of applications. Several studies were done to explore their use within short read mapping applications.
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Diode Clamped Multilevel Inverter Fed Induction Motor For Advanced Modulating Techniques

Diode Clamped Multilevel Inverter Fed Induction Motor For Advanced Modulating Techniques

A bstract — In this context, the multilevel inverters with larger number of levels suitable for circuit integration are actively investigated. Diode- clamped multilevel inverters are regarded as the promising solution. As the number of voltage levels increases the harmonic content decreases significantly.The general function of the multilevel inverter is to synthesize a desired AC voltage from several levels of DC voltages. Multilevel inverters are mainly used in medium voltage and high power applications to reduce the required voltage rating of the power semiconductor switching devices. These multilevel inverters are used to increase inverter operating voltage, to minimize THD with low switching frequency, to reduce EMI due to lower voltage steps. The advantages of this multilevel approach include good power quality, good electromagnetic compatibility, low switching losses and high capability. This project proposes to study various multilevel inverter topologies, to simulate various modulating techniques for diode clamped multi level inverter fed induction motor. These modulating techniques include sinusoidal pulse width modulation, modified reference modulating techniques. i.e., trapezoidal reference, staircase reference, stepped reference, third harmonic injected reference and offset line voltage injected reference with triangular carrier waves. The main objective of this study is to reduce total harmonic distortion, comparison of THD and fundamental component for different modulation techniques. The Simulated Induction motor model is connected at the end to observe the Stator current harmonics and speed-torque characteristics.
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Design of L-Band High Speed Pulsed Power Amplifier Using Ldmos Fet

Design of L-Band High Speed Pulsed Power Amplifier Using Ldmos Fet

The high power RF pulse is utilized in many applications including medical electronics, laser excitation and radars, etc. The most applicable application of RF high power pulse signal is using in radar systems. But the research of high speed RF high power pulse signal is not many compared to others [1–11]. Solid state power device is not higher output power and operating frequency, but wider bandwidth and higher reliability than vacuum tube [12]. Recently, solid-state power devices which have the output power up to hundreds W at S- band have been developed [13]. Moreover, we can obtain several kW output power by combining some devices. The pulsed power amplifier can be realized by using a modulation or a switching method.
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An Efficient HPF LED Driver with Zero Voltage Switching

An Efficient HPF LED Driver with Zero Voltage Switching

ABSTRACT: Lighting is an important aspect of energy consumption. It consumes about 25% of the world's total electric energy production. Light Emitting Diode (LED) technology has now emerged promising technology to replace conventional lighting devices. LEDs are highly efficient, energy conserving and eco-friendly. The applications of LEDs include in mobile products, and back lighting of Liquid Crystal Display(LCD) panels. LED drivers utilize an AC input source; Power Factor Correction (PFC) control must be imposed in the driver to achieve a high Power Factor (PF). This is a novel two stage LED driver. It consists of a buck-boost converter and a buck converter. The buck-boost converter which serves as a PFC converter to achieve a High Power Factor and low current ripples. The buck converter step down the dc-link voltage to drive high power white LEDs. Operating the active switches at Zero Voltage Switching(ZVS) can effectively reduce the power losses. To achieve the PFC function, it should be designed to operate at Discontinuous-Conduction Mode (DCM). The buck converter can be designed to operate at either Continuous- Conduction Mode (CCM) or DCM. Operating a buck converter at CCM has the advantage of small current ripple but, it requires using an inductor of higher value than that at DCM. This High Power Factor(HPF) LED driver topology will reduce the switching losses by using soft switching technique and improves power factor to almost unity.A prototype of the topology with 25 V input voltage and four 12 V, 10 W high power LEDs is tested and it works properly. Dimming is automatically adjusted by using a Light Dependent Resistor(LDR) of diameter 5mm. Simulation is done in MATLAB. dsPIC30F2010 and ATMEGA 328P are used in control schemes.
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Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

One of the most influential sociological papers was put forth in 1978 by the po- litical scientist Ithiel de Sola Pool and the mathematician Manfred Kochen in their paper “Contacts and Influence” [8]. The paper concerns social network structure and patterns. Written in 1958, it was not published until twenty years later because the authors were not satisfied with the depth of their work. A manuscript was produced though, and the paper was un-officially circulated amongst the relevant research com- munity. The paper put forth many of the crucial issues that came to define the field for some time after. In this network, they treat people as vertices and acquaintances between two people as an edge. Issues addressed involve an individual person’s de- gree, degree distributions, average and range of degrees, high-degree people, network structure, probability of a random acquaintance, probability of shared acquaintances or neighbors, and shortest path lengths. Due to the insufficiency of empirical data, they used the random graph model. They were also the first to scientifically intro- duce the notion of the small-world effect, popularized as “6 degrees of separation”, which refers to the idea that everybody in the world is within a relatively short social distance of everybody else [5], page 15.
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Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Biological systems offer a lot of inspiration for chemists and do not solely rely on high-fidelity spontaneous self-assembly. Depending on the situation, nature employs both covalent and non-covalent templates, helpers, or chaperones to mediate assembly. Cells can also physically separate the building blocks that are needed for the assembly from other competing functionality by sequestering the assembly units within organelles. For supramolecular chemists, the next challenge is to understand and rationally influence the selectivity of this process for practical applications. In some cases, high fidelity assembly of one unit in the presence of a complex mixture may be extremely important. For example, highly selective self-assembly can be of practical use in synthesis, self- replicating systems 186,187,188 and kinetic resolution. 189 Alternatively, a less selective and more promiscuous process can rapidly generate libraries of hetero and homodimers from a relatively small number of building blocks. The templated formation of a molecular host using dynamic covalent chemistry 79 relies on a sampling of many different possible
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Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

microcarriers were dispensed into ring-shaped agarose molds and shown to adhere to form living tissue constructs after several days in culture. The ability of cellularized microcarriers to adhere to one another involved cellular and extracellular matrix bridging that included the formation of epithelium-like cell layers lining the luminal and ablumenal surfaces of the constructs and the deposition of collagen and elastin fibers. The ring-shaped tissues nominally behaved as elastic solids, with a uniaxial mechanical response that is qualitatively similar to that of native vascular tissues and consistent with their elastin and collagen composition. Linearized measures of the mechanical response of the fabricated tissues at both low and high strains were observed to increase with duration of static culture, with no significant loss of stiffness following decellularization. The findings highlight the utility of cellularized macroporous gelatin microcarriers as self-adhering building blocks for the fabrication of living ring-shaped structures.
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Phase Shifted Soft Switching High Frequency Converter with Soft Switching Boost Power Factor Correction Converter for Induction Heating

Phase Shifted Soft Switching High Frequency Converter with Soft Switching Boost Power Factor Correction Converter for Induction Heating

Thus the HF- Soft switching Induction heating appliance is simulated and the effectiveness of the circuit is pronounced with the graphs, power factor and the harmonic spectrum. Future scope of this experiment is that the converter can be still developed for multiple burner type that can cook many type of heat levels and proper closed loop control for such applications shall be developed.

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Fused Converter Based Hybrid System Using Three State Switching Cell for High Power Applications

Fused Converter Based Hybrid System Using Three State Switching Cell for High Power Applications

ABSTRACT: Renewable energies are derived from natural processes that are replenished constantly and have various forms. This paper presents a new converter configuration for a hybrid fuel cell and photovoltaic systems with maximum power point tracking (MPPT) technique. This configuration allows the two sources to supply the load separately or simultaneously depending on availability. The converter is a combination of CUK and SEPIC converter. This paper also presents a step up and step down dc to dc converter based on the three state switching cell. It can be used for high power applications. The circuit consists of two switches two diodes and two coupled inductors. This topology has 3 switching stages, thus the name given as three state switching cell. General advantages of 3SSC circuits over conventional topologies are, the inductor is designed for twice the switching frequency, with consequent reduction of size and the current through the switches is half of the input current .Hybrid system transfer the energy to 3SSC through fused converter which is then fed to the drives for high power application .The two converters both 3SSC and fused are closed loop controlled using PI controllers, hence stability is obtained. It implemented using MATLAB.
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An Improved Active-Clamped DC-DC Converter with Modified PI Controller

An Improved Active-Clamped DC-DC Converter with Modified PI Controller

For a power level around 250-W in the PV-MIC system applications, several high step-up dc-dc converters were proposed for the power conversion form low dc voltage to high dc voltage. The half-bridge dc–dc converter has been presented to reduce switching power losses at high-voltage side [4]. The output diodes are turned OFF at zero current by using the voltage doubler rectifier. However, an additional half-wave rectifier is needed, which increases switching power losses. Alternatively, the active-clamped dc–dc converter has been used for low-voltage PV sources [5]. It uses the active-clamping circuit and the resonant voltage doubler rectifier. However, the active-clamping circuit increases the voltage stress of power switches at low-voltage side, causing high switching power losses. Additionally, thermal management problems should be considered for a practical design of the PV MIC system.Although, the soft-switched half-bridge dc-dc converters and active-clamped dc-dc converters were proposed but they does not have a high step-up voltage conversion ratio, thus requiring a high turns ratio. High turns ratio is not favoured due to high leakage inductance at the secondary side, which causes high switching losses at the output diodes.
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Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

It is difficult to create a device model to meet all the rules above. In the literature several device models have been presented for SiC MOSFETs and Schottky diodes. They can be divided in two major groups: 1) analytical models based on the finite element solution of drift-diffusion carrier transport in two or three dimensions [ 14 ] - [ 16 ]; and 2) circuit-oriented models which employ equation-based description of device behavior. Analytical models provide very high accuracy but require long simulation time and detailed information about device fabrication, while circuit-based models require much less time for simulation with acceptably accurate results using model parameters that can be extracted from experimental measurements. An additional advantage of physics-based circuit-oriented models is that they are compatible with circuit simulators and can be used to simulate an entire switching converter. New physics-based circuit-oriented SiC MOSFET and Schottky diode models will be developed in this dissertation.
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A Hybrid Multilevel Inverter by Using Diode Clamped And Cascaded H-Bridge Inverter Topologies

A Hybrid Multilevel Inverter by Using Diode Clamped And Cascaded H-Bridge Inverter Topologies

A novel multilevel inverter topology with reduced number of power switches is proposed. A multilevel inverter is a power electronic device that is used for high voltage and high power applications of low switching stresses and lower total harmonic distortion, hence reduces the size and bulk of passive filters. This new topology is based on a combination of conventional diode clamped and H-bridge topologies. The proposed idea has not only achieves high power ratings but also enables the use of renewable energy source .It dramatically reduces the switching losses; cost and low order harmonics and thus effectively improves total harmonic distortion. A 15 level inverter will be simulated with the implementation of PWM techniques and its effects on the harmonics spectrum will bez. The system will be modified with the help of MATLAB/Simulink.
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Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Chromium content is involved in phase control, for example a 9wt%Cr-ODS is martensitic while 12wt%Cr-ODS alloys are usually fully ferritic. It is apparent that to maintain high corrosion resistance the ideal range for chromium concentration is between ~13-18 wt% as the α-Ferritic BCC phase is dominant throughout all temperatures in that region [13]. However a lower chromium concentration, such as 9Cr ODS, allows for a ferritic-martensitic microstructure which has an improved resistance to high temperatures and void swelling. The choice of high chromium ferritic ODS material results from different compromises. High concentrations of chromium lead to thermal embrittlement due to the formation of the α’-phase at temperatures between 400°C and 550°C. The degree of thermal embrittlement related to the phase separation was clearly shown to increase with increasing chromium content in a comparison of 14 Cr, 16 Cr, and 19 Cr ferritic ODS steels [12]. For application at temperatures below 800°C fully martensitic steels can be used, but at higher temperatures they exhibit a phase transformation as well as being susceptible to corrosion due to lower chromium concentration.
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Design and performance analysis of 12Slot 14Pole HEFSM with outer rotor configuration

Design and performance analysis of 12Slot 14Pole HEFSM with outer rotor configuration

Abstract- This paper presents the performance analysis of 12Slot-14Pole hybrid excitation flux switching machine (HEFSM) with outer-rotor configuration. Nowadays, research on flux switching machines (FSMs) become an attractive research topic due to several excessive advantages of robust rotor structure, high torque and power capability, and low manufacturing cost that suitable for heavy applications. The FSMs that constructed with two flux sources namely permanent magnet (PM) and flux excitation coil (FEC) which also known as hybrid excitation flux has additional advantage of flux controllable. Furthermore, the outer-rotor configuration of the machines can provides higher torque density and appropriate for in-wheel direct drive application. Based on 2-D finite element analysis (FEA), the design improvement has been made on the initial design machine shows that there is great enhancement on torque and power.
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Advanced Calculations for Incomplete Information Systems

Advanced Calculations for Incomplete Information Systems

A novel multilevel inverter topology with reduced number of power switches is proposed. A multilevel inverter is a power electronic device that is used for high voltage and high power applications of low switching stresses and lower total harmonic distortion, hence reduces the size and bulk of passive filters. This new topology is based on a combination of conventional diode clamped and H-bridge topologies. The proposed idea has not only achieves high power ratings but also enables the use of renewable energy source .It dramatically reduces the switching losses; cost and low order harmonics and thus effectively improves total harmonic distortion. A 15 level inverter will be simulated with the implementation of PWM techniques and its effects on the harmonics spectrum will bez. The system will be modified with the help of MATLAB/Simulink.
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Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Research question 2, manuscript 1, examined the predictors (or risk variables) of more severe forms of impairment at baseline, to see if they were similar for youth with ADHD, youth with subthreshold ADHD, and youth without ADHD. The outcome variable, “severe” (abnormal/high) impairment was met if at least two functional domain items were endorsed as a “medium amount” or one item was endorsed as a “great deal.” Five of the functional impairment questions above were summed and a total impairment score was treated dichotomously, with “severe impairment present” = 1, and, “absent” = 2. The predictor variables included in the regression analysis include child factors (age, gender, comorbidity, and medication use) and family factors (exposure to parental psychopathology, primary parent’s educational attainment, marital status). Age (calculated from the DISC-IV interview date and date of birth) was treated as a
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Design study of field excitation flux switching machine for electric vehicles

Design study of field excitation flux switching machine for electric vehicles

M.Z, "Design Studies on High Torque and High Power Density Hybrid Excitation Flux Switching Synchronous Motor for HEV Applications," IEEE International Power Engineering and Optimization[r]

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Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

Modeling of Sic Power Semiconductor Devices For Switching Converter Applications

This qualitative study explored African American and White 18-19 year old males’ communication experiences with their parents and partners about sex and contraception, and their attitu[r]

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