(In,Ga)As/GaAs quantum dot structures
Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures
... 8.5 ML of material. A final QD layer was grown and left uncapped for morphology analysis. The atomic force microscopy (AFM) image of the final, uncapped QD layer, Fig. 1a, demonstrates that these InGaAs QDs are formed in ...
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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... both structures composed by the InGaAs or GaAs MBs, In(Ga)As QDs, undoped cap layer, and Au/AuGeNi contacts, the calcu- lations were carried out using Tibercad software ...of Ga in InAs ...
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Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... in quantum-dimensional heterostructures based on semiconductor III–V materials are widely studied by scientists in recent years ...(In,Ga)As quantum dots (QDs) and quantum wires (QWRs) are ...
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
... 1 structures exhibit distinct grains with voided boundaries, zone 2 structures contain columnar grains with dense boundaries and zone 3 structures contain very extensive ...1 structures when T ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... Initial quantum dot solar cells grown without strain balancing, it was apparent that there was significant degradation in cell ...test structures indicated undesirable material qualities, showing ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... of quantum structures have been proposed to obtain the optimal energy bandgap and current matching for multijunction solar cells ...as quantum wells (QWs) and quantum dots (QDs), can introduce ...
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InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... of quantum dots into single junction p-i-n solar cell can produce below bandgap light absorption and generate extra photocurrent and consequently improves the short circuit current density ...QDSC ...
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Design and Implementation of Quantum Dot Enhanced Next Generation Photovoltaic Devices
... The structures simulated were built from the designs specified in Tables ...0.5 Ga 0.5 As quantum wells, which saved considerable computation ...these quantum wells, resulting in a sub-bandgap ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were ...
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GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
... emission. GaAs-based quantum dot materials have attracted significant attention due to the achievable emission wavelengths matching the minimum in scattering of skin tissue ...Furthermore, ...
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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... In summary, vertical energy transfer for InAs/GaAs QD pair structures with and without an AlGaAs barrier was compared. Low-temperature PL measurements show that the QD peaks shift to the blue and the ...
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Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... Color of laser received from a QD laser is determined by the band gap width. In bulk semiconductors band gap is fixed. However, this situation changes in QDs, i.e., electrons will be sensitive to the nano- scale ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... term quantum dot (QD) refers to zero dimensional structures that possess superior transport and optical ...(2D) structures like the quantum well, the superior attributes of the ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... semiconductor quantum dot lasers have been improved with progress in active layer ...InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot ...
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Energy state of InGaAs quantum dots on SiO2 patterned vicinal substrate
... Self-assembled quantum dots (SAQDs) which can be formed by Stranski-Krastanow growth mode have been demonstrated to be defect free and to have high density with three-dimensional quantum confined nature of ...
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Ultra High Purity Gallium and Indium for Emerging Iii-V Epitaxial Nanoelectronics Materials Technologies: An Overview
... of GaAs, GaN, AlN nanostructures into quantum wells and quantum dots based devices and integration into larger scale structures has been the topic of most recent technological ...multi-layered ...
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The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... match the ideal diode factors that are considered to be equal to 2 for GaAs-AlGaAs tool [11] , [12] . V q and V D are overall voltages for the wetting layer (WL) and QD, respectively. To improve the convergence ...
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Continuous wave terahertz radiation from an InAs/GaAs quantum dot photomixer device
... as: dot size, density, material/s, multi-layer periodicity, and density-of- ...bulk GaAs can act analogously to mid-gap carrier trapping ...bulk GaAs can limit carrier lifetimes down to around ...
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Radiation Anisotropy and Ordering Effects Inherent to Quantum Dots and Wires in (In,Ga)As/GaAs Nanostructures
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Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
... the samples, are at a minimum for the 15-s Sb spray treatment. Additionally, for the 15-s Sb spray sample, the InAs QD phonon signal peaks show maximum sym- metry and resolvability compared to that of other sam- ples. ...
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