InAs/GaAs quantum dot lasers
Improved ground state modulation characteristics in 1 3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing
... resulting from annealing [21]. It is thus reasonable to say that the radiative recombination has been enhanced after 600°C RTA. The suppression of nonradiative Auger recombination may also result in smaller carrier ...
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Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with ...
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Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... which lay into the QD. More increase of QD size results in the more separated energy levels laid into the QD. Moreover, the recombination energies have decreased by size. Other states are among continuous states of the ...
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Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations
... photon densities, laser’s response to various step current injections, and P-I characteristic curve for the three en- ergy levels ES2, ES1 and GS, were investigated. The results have shown that by increasing the ...
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Effects of annealing on performances of 1 3 μm InAs InGaAs GaAs quantum dot electroabsorption modulators
... The realization of RF measurement on the processed (annealed) lumped-element QD-EAM confirms the pro- spect of QD epiwafer in monolithic integration for fu- ture references. By applying low-cost intermixing, such ...
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Optically pumped intersublevel midinfrared lasers based on InAs-GaAs quantum dots
... In this subsection, we examine the processes which lead to electron transitions between different energy levels. We give the relations for transition rates due to interaction with LO and longitudinal-acoustic (LA) ...
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Continuous wave terahertz radiation from an InAs/GaAs quantum dot photomixer device
... Ti:Sapphire lasers, but these pulse-driven methods exhibit poor frequency tunability and low electro-optic efficiency and are inherently bulky, complex, expensive, and mechanically ...
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Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... 1. Kovsh AR, Ledentsov NN, Mikhrin SS, Zhukov AE, Lishits DA, Maleev NA, Maximov MV, Ustinov VM, Gubenko AE, Gadjiev IM, Portnoi EL, Wang JS, Chi J, Ouyang D, Bimberg D, Lott JA: Long-wavelength (1.3 -1.5 micron) ...
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High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities
... the InAs=GaAs 8–11 sys- tem, which operates typically at wavelengths larger than 1 ...Ti:Sa lasers is actually being raised. InAs QDs can obviously not provide the solution, since they lead to ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... structures. Quantum dots show promise for use in diode lasers, amplifiers, and biological ...solid-state quantum computing. Indium arsenide quantum dots are currently studied for their use in ...
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... 10. Maximov MV, Tsatsul ’ nikov AF, Volovik BV, Sizov DS, Shernyakov YM, Kaiander IN, Zhukov AE, Kovsh AR, Mikhrin SS, Ustinov VM, Alferov ZI, Heitz R, Shchukin VA, Ledentsov NN, Bimberg D, Musikhin YG, Neumann W: Tuning ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... of InAs/GaAs quantum dot based PCA wafers with compact semiconductor lasers fabricated from identical QD based superlattices [5], [6], have been ...containing InAs quantum ...
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Electrically pumped continuous-wave III–V quantum dot lasers on silicon
... LIV characterizations were also performed to monitor changes in the lasing threshold. The ageing results are shown in Figure 4d. A 29.7% drop in power, over the ageing test period of 3,100 hours, is observed, with most ...
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Bright Single Photon Source at 1 3 μm Based on InAs Bilayer Quantum Dot in Micropillar
... fiber-based quantum information requires real single-photon sources (SPSs) at telecom band to replace the traditional pseudo-SPSs based on strongly decayed pulse ...individual quantum dots (QDs) are ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... 1.3-μm quantum dot laser, the bimodal-size of InAs quantum dots can be well eliminated through the single-layer annealing for the laser active ...higher quantum dot density and a ...
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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... the GaAs matrix or in the wetting layers, and even if the photon-generated carriers are initially collected by the SQDs, most of them still go to TQDs and recombine ...
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Chirped InGaAs quantum dot molecules for broadband applications
... 300-nm GaAs is grown at 580°C, followed by a QDM layer and 100-nm ...of InAs seed QDs are grown at 500°C, then capped by y-ML GaAs at 470°C after which nanoholes are formed and used as a template for ...
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Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
... in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs ...(311)B-oriented quantum dot superlattices measured in polarized scattering ...in quantum dots and ...
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Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots
... a quantum neural network based on quantum dots using numerical method of path integral ...the quantum neural network using an array of single-electron quantum dots with dipole-dipole ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... metamorphic InAs QDs have been performed in last years [37 – 39, 43], full aspects of the photoresponse mechanism still remain unclear, as along with the influence of the MB on the properties of the ...the ...
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