InAs/InP
Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field
... Let us examine the exciton diamagnetic shift in the InAs/ InP QW with the local width fluctuations in the pres- ence of a magnetic field parallel to the growth direction 共 B ⬜ 储 zˆ 兲 . In Figs. 10 共 a 兲 and ...
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Single photon emission of InAs/InP quantum dashes at 1 55 μm and temperatures up to 80 K
... embedding InAs/InP QDs into different kinds of optical resonator structures including photonic crystal [ 16,20 ] and micropillar [ 22 ] cavities or optical horn structures [ 17 ...on InAs/InP ...
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Influence of substrate orientation on exciton fine structure splitting of InAs/InP nanowire quantum dots
... In this paper, we use an atomistic approach [13-15] to calculate electronic and optical properties of nanowire InAs/InP quantum dots. Apart from typical [111] sub- strate growth, we performed our ...
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Electron wave function spillover in self assembled InAs/InP quantum wires
... Magnetophotoluminescence experiments and theoretical calculations within the effective-mass approximation were combined to study the charge confinement in self-assembled InAs/ InP quantum wire samples. ...
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Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p i n Laser Heterostructures
... in InAs/InP QDashes structured carriers were first tunneled from the quantum well into QDashes in InAs/InP and then recombine within QDashes to emit a long wavelength laser light at ...in ...
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AN EVALUATION OF ELECTRON ENERGY LEVELS IN A TRANSVERSE MAGNETIC FIELD FOR INAS/INP AND SELF-ASSEMBLED QUANTUM WIRES
... Abstract: - Using the theoretical formalism of Y. Sidor etal[Phys. Rev. B76, 195320(2007)], we have theoretically studied the exciton confinement in InAs/InP quantum wells(QW) and quantum wires(QWR) in the ...
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Carrier delocalization in InAs/InGaAlAs/InP quantum‐dash‐based tunnel injection system for 1 55 μm emission
... Before the discussion on spectroscopic data, it is worth noticing that implementation of the TI scheme requires careful tuning of the injector QW thickness to fulfill two conditions: (i) fast carrier relaxation/efficient ...
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Electronic properties of core shell nanowire resonant tunneling diodes
... of InAs/InP/InAs/ InP/InAs core-shell NW RTDs despite the fact that these are expected to have a larger current-carrying cap- ability compared to their axial ...middle InAs ...
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Theoretical and experimental studies of (In,Ga)As/GaP quantum dots
... The density of electron-hole pairs is indeed estimated to be high (above 10 per QD). Such effects have been observed in InAs/InP QDs [20]. For the HE transition, the emission shows a biexponential decay ...
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Ten fold enhancement of InAs nanowire photoluminescence emission with an InP passivation layer
... the InP-capped NWs compared to the InAs core-only NWs calculated as a ratio of the maximum peak intensities of the two ...the InAs NWs are more strongly affected by the thermal effects due to their ...
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InGaAsP/InP Nanocavity for Single Photon Source at 1 55 μm Telecommunication Band
... single InAs/ InP QD is a good single-photon emitter under usual excitation conditions [12] since the excitation pulse duration can easily be in the order of picoseconds or less, much shorter than the ...
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InSb based quantum dot nanostructures for mid infrared photonic devices
... In summary, the MBE growth and optical properties of InSb QDs have been studied. Dense arrays of InSb QDs were grown which are formed within InSb submonolayers in InAs. The QDs were grown with a novel technique ...
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Self Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal Organic Chemical Vapor Deposition
... on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) ...vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony ...
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Room temperature carrier kinetics in the W type GaInAsSb/InAs/AlSb quantum well structure emitting in mid infrared spectral range
... The investigated structure was grown on a (100)- oriented InAs substrate in a solid source molecular beam epitaxy system equipped with valved cracker cells for both antimony and arsenic. The structure contains ...
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Submillimeter-wave InP Gunn devices
... from InP Gunn devices, tunnel injection transit-time (TUNNETT) diodes, and resonant tunneling diodes ...from InP Gunn devices without the use of power combining compare quite ...
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Quantum dot cascade laser
... Figure 1a gives the scheme of one unit of coupled QDs lasing layers in one period. Figure 1b shows the atomic force microscopy (AFM) image of one-period QDCL with another unit of coupled QDs lasing layers (indi- cated by ...
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Automation and heat transfer characterization of immersion mode spectroscopy for analysis of ice nucleating particles
... and INP in- fluence on cloud microphysics are identified as a high pri- ority for the improvement of INP representation in GCMs (Seinfeld et ...of INP number concentrations, particularly in remote ...
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Growth and fabrication of InAs/GaSb type II superlattice mid wavelength infrared photodetectors
... The InAs/GaSb SL is grown by molecular beam epitaxy [MBE] on n-type doped (100) GaSb ...with InAs/GaSb SL growth: (1) InAs has ...the InAs and GaSb layers for strain balance and (2) interface ...
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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... the InAs/InGaAs QD nanostruc- tures has been performed during last years [19–21], more work on the photoelectrical properties is still needed to provide a quantitative assessment of the role of strain-related ...
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Temperature dependence of impact ionization in InAs
... In Fig. 5 for both temperatures two distinct regions can be observed. For electric fields > 20 kV/cm, increases with field, by ~ one order of magnitude between 20 and 70 kV/cm. Such an increase in is similar to ...
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