InAs quantum dot density
Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations
... photon densities, laser’s response to various step current injections, and P-I characteristic curve for the three en- ergy levels ES2, ES1 and GS, were investigated. The results have shown that by increasing the ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... In(Ga)As quantum dots on silicon [7] and Ge [8] substrates, to realize lasing at a wavelength of 1300 nm ...[9]. Quantum dots are expected to offer several advantages over the current approach of bulk Ge on ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... between InAs layers and GaAs substrate [8]. The growth of InAs on GaAs (001) substrate results in the formation of a three-dimensional (3D) island shape on the InAs with the Stranski-Krastanov (SK) ...
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Investigation of InAsSbP quantum dot mid-infrared sensors
... InAsSbP quantum dots ...an InAs(100) sub- strate by modified liquid phase ...a quantum dot photoconductive cell were ...power density of 0.07 W cm −2 , the surface resistance of ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... two quantum efficiency pads, transmission line model (TLM) measurement pads A broadband/g-line ultraviolet light source was calibrated to 10 mW/cm 2 ...energy density (dose) of 125 mJ/cm 2 ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... In(Ga)As quantum dots on silicon [7] and Ge [8] substrates, to realize lasing at a wavelength of 1300 nm ...[9]. Quantum dots are expected to offer several advantages over the current approach of bulk Ge on ...
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Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... efficiency and internal optical loss exhibit weak depen- dency on temperature. With the values of internal quan- tum efficiency and internal optical loss, the differential gain (dg/dn) and nonlinear gain compression ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... The InAs QD are than grown and a small interrupt time is given after each growth of the ...of InAs QD which will improve dot density and helps in obtaining a more homogenous dot ...
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Continuous wave terahertz radiation from an InAs/GaAs quantum dot photomixer device
... as: dot size, density, material/s, multi-layer periodicity, and density-of- ...and InAs QD layers integrated into bulk GaAs can act analogously to mid-gap carrier trapping ...lifetimes; ...
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Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers
... annealed InAs QD layers, dashes and holes are clearly ...lower density of holes is present and the dashes are barely visible compared to sample ...of InAs, In segregation and In-Ga intermixing [7], ...
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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... assembled InAs/GaAs quantum dot (QD) structures due to their unique properties as well as their great potential for various optoelectronic devices [1 – ...the quantum coupled InAs/GaAs ...
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Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
... of InAs/GaAs quantum dot (QD) systems with Sb spray prior to the capping of a GaAs layer was determined by a Raman scattering ...the InAs/GaAs system show two phonon signal bands related to ...
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Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... At the lasing wavelength in the PML regime, the absorp- tion coefficient for TM-polarized light is only 1.6 times smaller than that for TE polarization (Figure 4). The max- imum ratio of absorption coefficients reaches ...
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Bright Single Photon Source at 1 3 μm Based on InAs Bilayer Quantum Dot in Micropillar
... temperature [7–9], and precise control of deposition amount [10] of QDs and the isolation of QDs by growth on a mesa/hole-patterned substrate [11] or etching into micropillars [12, 13]. To extend their emission ...
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Detecting Spatially Localized Exciton in Self Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency
... asymmetric shape, we carried out PL measurements at different laser power ranging from 10 to 100 mW. We also performed AFM measurements on an uncapped structure similar to the investigated one. From Fig. 5, it is clear ...
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Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures
... The quasi-Fermi distributions that determine the valence and conduction subbands are temperature dependent due to their Fermi-Dirac functions. This leads to a strong tem- perature dependence of the carrier density ...
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ZnS/SiO 2Passivation Layer for High-Performance of TiO 2/CuInS2 Quantum Dot Sensitized Solar Cells
... Semiconductor quantum dots (QDs) based on II-VI group such as CdSe,[1] CdTe,[2] CdS,[3] PbS,[4] PbSe,[5] and ...for quantum dot sensitized solar cell (QDSSC) and photocatalysis applications, due to ...
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Density functional theory study of InP quantum dot and oxidized surface
... least quantum dots that are larger than a critical size [25, 26] so that empirical parameters can be used to manage the rest of the ...for quantum dots that are less than these critical sizes results some ...
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Gold nanoarray deposited using alternating current for emission rate manipulating nanoantenna
... In this letter, we have proposed an easy and controllable method to prepare highly ordered Au nanoarrays by pulse alternating current deposition in anodic aluminum oxide template. This method not only averts some com- ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... a quantum well structure, the two dimensional nature of the density of states changes the gain ...the density of states increases with ...states’ density in a quantum well is constant ...
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