InAs self-assembled quantum dot
Quantum box energies as a route to the ground state levels of self-assembled InAs pyramidal dots
... ground state energy of a structure with a given Q, relative to that of a structure with Q 5 1) is, say, 3%, is smaller for small volumes than it is for large volumes. In other words the variation of the ground state ...
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Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... High-temperature stability in laser operation is an essen- tial characteristic required for the long-wavelength semi- conductor lasers in optical communication systems. Realization of uncooled high-speed operation of ...
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Temperature dependence of the photoluminescence of self assembled InAs/GaAs quantum dots in pulsed magnetic fields
... INPAC-Institute for Nanoscale Physics and Chemistry, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium 共 Received 15 May 2007; revised manuscript received 15 February 2008; published 25 March 2008 兲 We have ...
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The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... usual quantum-well (QW) lasers, in many aspects including threshold current, thermal stability, modulation bandwidth, and spectral band-width, that is similar to an impulse function due to discrete mode density ...
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Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells
... of InAs self-assembled quantum dots in the intrinsic region of a GaAs pin ...create quantum dot arrays that do not require strain ...the quantum dots at the nanometre ...
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Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells
... of InAs self-assembled quantum dots in the intrinsic region of a GaAs pin ...create quantum dot arrays that do not require strain ...the quantum dots at the nanometre ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... in self-assembled InAs/GaAs quantum dot photoconductive antenna in the wavelength region between 1140 nm and 1250 nm at temperatures ranging from 13 K to 400 K is ...with quantum ...
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The development of BEEM modeling for the characterization of Si/Ge self-assembled quantum dot heterostructures
... of quantum dots were done by Rubin ...single InAs self assembled quantum dots buried beneath a Au/GaAs ...interface. InAs dots were grown on top of undoped GaAs buffer layer and ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... as self-assembled QDs due to large lattice (~ 7%) mismatch between InAs layers and GaAs substrate ...of InAs on GaAs (001) substrate results in the formation of a three-dimensional (3D) island ...
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Increased conductance of individual self assembled GeSi quantum dots by inter dot coupling studied by conductive atomic force microscopy
... the dot size. Similar phenomenon was observed by Tanaka et al. on InAs QDs [26], where they found the conductance on InAs QDs were larger than that on the wetting layer and attributed it to the band ...
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Investigation of InAsSbP quantum dot mid-infrared sensors
... InAsSbP quantum dots (QDs). The self-assembled nanostructures were grown on an InAs(100) sub- strate by modified liquid phase ...a quantum dot photoconductive cell were ...of ...
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AN EVALUATION OF ELECTRON ENERGY LEVELS IN A TRANSVERSE MAGNETIC FIELD FOR INAS/INP AND SELF-ASSEMBLED QUANTUM WIRES
... fabricated with monolayer precision with dimension of few nm. We have verities of nano structured QWR such as circular, rectangular, V-groove, T-shaped and elliptical shaped. Because of the size quantization, the ...
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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... For structure and contact designing as well as under- standing of the energy profile for both structures composed by the InGaAs or GaAs MBs, In(Ga)As QDs, undoped cap layer, and Au/AuGeNi contacts, the calcu- lations ...
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Optical characterization of In flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm
... In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam ...of self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μ m ...
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Strategies for Controlled Placement of Nanoscale Building Blocks
... Self-assembled monolayers (SAMs) are ordered assembly of organic molecules that spontaneously form on the sur- face of metals, metal oxides, and semiconductors [63–68]. The surface properties of SAMs can be ...
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Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures
... ent operational wavelengths for example by using a figure of merit (FOM). The work in this thesis is not a comparison of devices designed for one particular application and as such a FOM is not practical in this ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... of InAs quantum dots epitaxially grown on a silicon substrate have been investigated to evaluate their potential as both photodiodes and avalanche photodiodes (APDs) operating at a wavelength of 1300 ...the ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... illumination. Also included are three 1 x 0.5 cm 2 concentrator-designed grid cells, two quantum efficiency pads, transmission line model (TLM) measurement pads A broadband/g-line ultraviolet light source was ...
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1300 nm wavelength InAs quantum dot photodetector grown on silicon
... of dot layers, incorporation of quantum dots in a resonant cavity structure can increase the quantum ...external quantum efficiency of 90% at ~1 µ m wavelength was reported for a resonant ...
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Spin effects in InAs self assembled quantum dots
... semiconductor quantum dots (QDs) are also of high interest because electron spins can be used as a quantum bit [5] for quantum computing [6] and quantum communication ...with ...
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