InGaAs/GaAs quantum well lasers
Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... Microrings and microdisks with a semiconductor AlGaAs pedestal were fabricated. The active region of the lasers was based on InAs/InGaAs/GaAs quantum dots emitting near 1.3 μm with high ...
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Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... Color of laser received from a QD laser is determined by the band gap width. In bulk semiconductors band gap is fixed. However, this situation changes in QDs, i.e., electrons will be sensitive to the nano- scale ...
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Exciton Dynamics in Stacked InGaAs/GaAs Quantum Rings Under Resonant Excitation
... ductor quantum nanostructures like quantum dots (QDs) and quantum rings (QRs) for the development of room temperature operating hetero-structure lasers and high-speed optoelectronic devices, ...
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Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... in quantum dot physics, in this case enable the population inversion and lead to qualitatively distinct be- ...QD lasers with dots embedded in cavities, and as high repetition rate single photon sources ...
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The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... semiconductor lasers are studied by using an equivalent circuit ...self-assembled InGaAs-GaAs quantum dot Laser, the laser coverage factor increment can increases the laser threshold current, ...
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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... atomic-like quantum confinement, self-assembled semiconductor quantum dots (QDs) are par- ticularly attractive from a fundamental research perspective and also for their industrial applications in ...
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Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... conventional InGaAs material, the lattice-matched conditions for InGaNAs quantum well materials are determined from experimental results published in the ...of InGaAs QWs. It is shown that an ...
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Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors
... self-assembled quantum dots 共QDs兲, their application to high performance optoelectronic devices, such as QD laser diodes and QD infrared photodetectors, have been successfully demon- ...the quantum-confined ...
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Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... in quantum-dimensional heterostructures based on semiconductor III–V materials are widely studied by scientists in recent years ...(In,Ga)As quantum dots (QDs) and quantum wires (QWRs) are ...
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InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... of quantum dots into single junction p-i-n solar cell can produce below bandgap light absorption and generate extra photocurrent and consequently improves the short circuit current density ...and lasers) ...
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Design and simulation of InGaAs/AlAsSb quantum-cascade lasers for short wavelength emission
... In- GaAs/AlAsSb QCL using conclusions drawn from the simula- tion of the ...electroluminescence InGaAs/AlAsSb struc- ture presented in the literature (from this point on referred to as structure A) as a ...
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Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot in well structure
... semiconductor quantum dots (QDs) have attracted much attention in the past decade due to their importance in low-dimensional physics and their appli- cations in opto-electronic devices such as lasers [1,2], ...
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Aspects of the internal physics of InGaAs/InAlAs quantum cascade lasers
... an InGaAs/ InAlAs midinfrared quantum cascade laser 共QCL兲 designed to operate in continuous wave mode at room temperature 关Beck et ...as well as an evaluation of the temperature of the nonequilibrium ...
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Thermal effects in InGaAs/AlAsSb quantum-cascade lasers
... near-infrared InGaAs/AlAsSb QCL but it is equally applicable to all QCL material systems and wavelength ...in GaAs-based ...that GaAs has a lower ther- mal conductivity than InP means that knowledge ...
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A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices
... of quantum cascade lasers (QCLs) for use as a design tool, to interpret experimental results and hence improve un- derstanding of the physical processes occurring inside working devices and as a simulator ...
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Optically pumped intersublevel midinfrared lasers based on InAs-GaAs quantum dots
... Therefore, we propose the following scheme which gives the largest values of gain among all the schemes explored. The elec- trons are optically pumped from level 1 to level 7. The distance between levels 5 and 7 is close ...
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Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots
... 共 Received 27 November 2007; revised manuscript received 9 January 2008; published 6 March 2008 兲 Nuclear polarization dynamics are measured in the nuclear spin bistability regime in a single optically pumped ...
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Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... intersubband lasers or quantum cascade lasers 共QCLs兲 as unipolar semiconductor devices utilizing intersubband transitions in a repetition of identical coupled multi-quantum-well ...
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Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
... he dimensions of the major and minor axes at the height of 1 nm in GID data comes out to be 48 nm and 26.7 nm giving eccentricity of 0.83 and only at the height of 1.9 nm we get the values of major and minor axes as 37 ...
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Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As2 and As4 sources
... source on the spectral and polarization features of the QR- and QW-related interband transitions was investigated and explained in terms of the carrier confinement effects caused by variation of composition contrast ...
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