InGaAs quantum dot lasers
Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... Color of laser received from a QD laser is determined by the band gap width. In bulk semiconductors band gap is fixed. However, this situation changes in QDs, i.e., electrons will be sensitive to the nano- scale ...
9
InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... of quantum dots into single junction p-i-n solar cell can produce below bandgap light absorption and generate extra photocurrent and consequently improves the short circuit current density ...and lasers) ...
172
The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... Abstract—Quantum dot semiconductor lasers are studied by using an equivalent circuit ...self-assembled InGaAs-GaAs quantum dot Laser, the laser coverage factor increment can ...
6
Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... theoretical proposal of Ref. [9]. The population inversion is achieved in an incoherent regime where the dephasing time is shorter than the laser pulse duration. Pump- probe measurements are presented, where the phonon- ...
6
Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors
... self-assembled quantum dots 共QDs兲, their application to high performance optoelectronic devices, such as QD laser diodes and QD infrared photodetectors, have been successfully demon- ...the quantum-confined ...
9
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... in quantum-dimensional heterostructures based on semiconductor III–V materials are widely studied by scientists in recent years ...(In,Ga)As quantum dots (QDs) and quantum wires (QWRs) are ...
7
Dynamically controlled resonance fluorescence spectra from a doubly dressed single InGaAs quantum dot
... excitation lasers, the doublets extend to degenerate doublet manifolds and each energy level has infinite inner states before additional effects due to the coupling laser, see ...
5
Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... 10. Maximov MV, Tsatsul ’ nikov AF, Volovik BV, Sizov DS, Shernyakov YM, Kaiander IN, Zhukov AE, Kovsh AR, Mikhrin SS, Ustinov VM, Alferov ZI, Heitz R, Shchukin VA, Ledentsov NN, Bimberg D, Musikhin YG, Neumann W: Tuning ...
7
Quantum dot micropillar lasers subject to coherent time delayed optical feedback from a short external cavity
... micropillar lasers offer an excellent testbed system for investigating fundamental laser physics and nonlinear ...long-wavelength InGaAs QDs 47,48 or other low-dimensional gain materials 49,50 ...
8
Chirped InGaAs quantum dot molecules for broadband applications
... self-assembled InGaAs quantum dots ...as lasers seek to minimize the inhomogeneities intrinsic to Stranski- Krastanow (SK) QDs [1], those for broadband devices such as superluminescent diodes (SLDs) ...
9
Dropout dynamics in pulsed quantum dot lasers due to mode jumping
... long lasers with high- and antireflection coatings on the rear and front facets lase either at the GS (around 1265 nm, 50 mA threshold at the pulsed pump) or simultaneously at the GS and ES (around 1190 nm, 1:5 A ...
6
Ultrashort pulse generation from quantum dot semiconductor diode lasers
... Quantum-dot lasers were theoretically predicted to exhibit very low values of linewidth enhancement factor ...mode-locked lasers very close to threshold, and at a high reverse bias [6]; ...
141
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
... Lasing spectra for a 50 µm × 3200 µm InAs/GaAs QD laser grown on a silicon substrate measured 5% above the threshold at various heat-sink temperatures under c.w operation are shown.. It [r] ...
8
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
... Broad-area lasers were fabricated as shown schematically in Figure 3a. The lasers were processed with as-cleaved facets. A cross-sectional scanning electron microscope (SEM) image of a fabricated InAs/GaAs ...
12
Interfacing Spins in an InGaAs Quantum Dot to a Semiconductor Waveguide Circuit Using Emitted Photons
... of quantum information and the most easily manipulated at the single qubit level 1 ...optical quantum computing is an early front ...a quantum memory, such an approach is intrinsically un-scalable ...
26
Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... single quantum dot in a regime where the laser pulse is long compared to the time for the phonon-induced relaxation between photon-dressed dot states, following the theoret- ical proposal of ...tum ...
8
Determining the linewidth enhancement factor via optical feedback in quantum dot micropillar lasers
... certain pump current above threshold, this effect originates when the gain maximum shifts away from the cavity mode. The reduced output power in the presence of feedback can be explained by gain competition with the ...
9
Stochastic polarization switching induced by optical injection in bimodal quantum dot micropillar lasers
... semiconductor lasers is of great interest in non-linear dynamics and its applications for instance in secure data communication and photonic reservoir ...emitting quantum dot micropillar ...
16
Semiconductor Quantum Dot Lasers as Pulse Sources for High Bit Rate Data Transmission
... In this paper, first, we describe QD laser analyzing theory based on the multi population rate equations model and consider the homogeneous and inhomogeneous broadening of the optical gain for solving InAs/InP ...
15
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... the InGaAs or GaAs MBs, In(Ga)As QDs, undoped cap layer, and Au/AuGeNi contacts, the calcu- lations were carried out using Tibercad software ...the InGaAs/GaAs interface region, depletion layers near ...
10