InGaN-based laser diodes
InGaN-BASED LASER DIODES Shuji NAKAMURA
... of the LDs with a resolution of 0.001 nm. At output powers of 3 mW and 10 mW, single- mode laser emissions were observed at wave- lengths of 408.1 nm and 408.2 nm. At output powers of 30 mW and 50 mW, multimode ...
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Reversed Effects of Quantum Well Numbers and Temperature on Optical Power and Wavelength of a Designed Ultraviolet Semiconductor Laser Based on GaN/InGaN
... (laser diodes) leads to some undesirable results such as optical power reduction and rise in threshold ...lasers based on GaN and InGaN with mole fraction of ...
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Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation
... blue laser diodes (LDs) have attracted great attention for use in laser-based white lighting [1–3] and visible light communication appli- cations ...light-emitting diodes (LEDs) at high ...
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Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2
... defined based on the time of 50% light output degradation for the display industry or 70% light output degradation for the lighting industry with a lifetime of tens of thousands of hours ...organic laser ...
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Size-dependent capacitance study on InGaN-based micro-light-emitting diodes
... In contradiction to Shockley’s model and conventional p-n junction theory, 1 abnormal negative capacitance (NC) has been observed repeatedly in alternating current (AC) impedance measurements of many semiconductor ...
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Fabrication of InGaN/GaN MQWs Vertical Blue Light-Emitting Diodes Using Laser Lift-Off Technique
... light-emitting diodes (LEDs) are the most promising candidate for development of more efficient and highly reliable light source for replacement of low efficient (~ 5-10%) incandescent bulb, compact fluorescence ...
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Enhancement of InGaN Based Light Emitting Diodes Performance Grown on Cone Shaped Pattern Sapphire Substrates
... conventional InGaN/GaN MQW blue LED grown on the USS were also prepared with exactly the same growth and process ...semiconductor laser (405 nm) as the exciting source, the photoluminescence (PL) was used ...
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Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates
... the InGaN/GaN MQWs, confocal PL measurements are carried out using a 375 nm laser source with a WiTec confocal microscopy and an optical microscope system, where the laser beam has been focused into ...
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Confocal Microscopy using an InGaN violet laser diode at 406nm
... ion based laser source to obtain the blue or ultraviolet light required to excite many of the more widely used ...UV laser lines are not well matched for the excitation of many deep blue flurophores ...
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Mechanism of enhanced light output in InGaN-based microlight emitting diodes
... The Raman spectroscopy measurements were carried out at room temperature using the 514 nm line of an Ar ⫹ laser as an excitation source focused to a spot size of ⬃ 1 m. The scattered light was detected in the ...
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Novel thin GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light
... Figure 1 shows a schematic diagram of conventional V-LEDs and NTG-LEDs. The fabrication processes of the NTG-LEDs were began to define the several n-contact vias by using an inductively couple plasma (ICP) to etch ...
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Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes
... Based on this first set of data, the EBIC/CL studies were performed on one type of LED from each “family,” a 2 T and Q2T device which, based on the CL, are the brightest from each set. LEDs possessing a ...
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Beam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy
... The micro-LEDs studied were 64x64 arrays of micro-disk elements, each 20-µm in diameter, within an overall active footprint of 3mm x 3mm, and were matrix- addressable via a contact grid. The wafer details and fabrication ...
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Theory of Optimal Mixing in Directly Modulated Laser Diodes
... We developed a nonlinear harmonic balance method to describe the mixing in directly modulated laser diodes. We have shown the existence of an optimal opera- tion point through theory and numerical ...
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Red and orange laser operation of Pr:KYF4 pumped by a Nd:YAG/LBO laser at 469.1nm and a InGaN laser diode at 444nm
... this laser material presents broad absorption and emission features and is the only one, to our knowledge, which is able to lase at about ...a laser wavelength of interest for quantum information ...
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Investigation of near infrared laser diodes for application in space based spectroscopic gas sensing
... DFB laser em itting at ...f laser diodes em ploying a gas absorption ...the laser source under test can be determ ined. For a laser source to act as an injection seed laser in a ...
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InAs/GaAs Quantum Dot Dual Mode Distributed Feedback Laser Towards Large Tuning Range Continuous Wave Terahertz Application
... LC-DFB laser fabricated by deep gratings vertically etched into the ridge waveguide structure, and a low slope efficiencies below ...the laser ridge ...
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Pulse formation and dynamics in self pulsating semiconductor laser diodes
... The behaviour of the near-field was investigated using an experimental set up similar to th at described on page 66 of section 4.4. Again the only major difference was the use of metallic mirrors and the NA of the ...
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Characterization, Simulation and Optimization of Surface Etched Slotted Tunable Laser Diodes
... multi-section laser tuning through experimental tuning map ...mode laser were ...the laser, while implementing such a gradient significantly improves the agreement between experiment and ...
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Photonic Materials and Devices
... is based on electrical control of the refractive index of a 5 µm-thick layer of nematic liquid crystal using a circular array of photolithographically de- fined transparent ...
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