InP/GaAs
Far infrared laser spectroscopy of neutral and negatively charged shallow donors in GaAs and InP
... n-InP. GaAs and InP were first made in the 1930*s, though this early material was of poor quality, and studies of their semiconducting properties only became possible in the 1950*s when methods of ...
290
Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p i n Laser Heterostructures
... Charge transfer characteristics of the long wavelength semiconductor laser struc- tures, containing quantum dot layers (QDs), were investigated by means of tem- perature dependent current-voltage and electroluminescence ...
10
Boron and Nitrogen in GaAs and InP Melts Equilibrated with B2O3 Flux
... Although the boron and nitrogen contents of a III-V melt have not been measured experimentally, there are many experimental reports of the boron contents of single crystal GaAs, which is of commercial significance. ...
5
Growth and formation of inverse GaP and InP opals
... Over the last decade there has been a great interest in photonic materials, expanding from the work of Yablonovitch (1) of mechanically drilled holes in ceramic (microwave region), to extensions of Si based ...
9
Electronic properties of core shell nanowire resonant tunneling diodes
... the InP barriers and InAs ...of GaAs/AlGaAs/GaAs/AlGaAs/GaAs which may conduct current with smaller applied voltages due to the larger effective mass of electrons in GaAs and discuss ...
8
A study of InP-based strained layer heterostructures
... the GaAs/AlGaAs system , have since been extended for InP based longer wavelength MQWs with some success (Moseley et al 1990, Yoo et al ...of InP based semiconductor mirrors defining the cavity ...
228
Materials integration for high-performance photovoltaics by wafer bonding
... GaInP, GaAs, InGaAsP, and InGaAs based on InP/Si wafer-bonded epitaxial templates is proposed and InP/Si template fabrication and characterization is ...
303
Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
... including GaAs, InGaAs, and InP have drawn quite a lot of attention as alternative channel materials due to their high electron mobility and low effective mass over ...candidates, InP could be ...
6
InGaAsP/InP Nanocavity for Single Photon Source at 1 55 μm Telecommunication Band
... however, InP-based nanocavities, ...of InP-based nanostructures to be less than 1 nm while remaining of good optical quality [33, ...wet-etched InP-based nanopillar presents nice optical properties ...
7
GaP(001) and InP(001): Reflectance anisotropy and surface geometry
... of GaAs 共 001 兲 4,5 and InP 共 001 兲 6 surfaces have shown that the atomic structure can be successfully clarified in many cases by comparing total energy and band structure calculations for the optical ...
6
A GaAs-based self-aligned stripe distributed feedback laser
... on GaAs as ridge lasers, with either laterally loss-coupled gratings [ 1 ] and more recently using buried index-coupled grating approaches incorporating combinations of GaAs, AlGaAs and InGaP [ 2, 3 ] ...
7
Gallium Phosphide IMPATT Sources for Millimeter-Wave Applications
... considerably higher RF power at mm-wave atmospheric window frequencies as compared to their conventional counterparts such as DDR IMPATTs based on Si, GaAs and InP. Optimum design parameters and simulation ...
10
Submillimeter-wave InP Gunn devices
... [1]. GaAs and InP transferred-electron de- vices (TEDs), also called Gunn devices, have been utilized as low-noise RF sources up to millimeter-wave frequencies since their inception over three decades ...on ...
9
Suppression of cross-hatched polariton disorder in GaAs/AlAs microcavities by strain compensation
... sponding to the different samples is shown in Fig. 2(a). Resonant transmission was measured in order to deter- mine the average density of cross-hatches. The samples were held in a bath cryostat at a temperature of T ¼ ...
5
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... The reason for the small feature after 1.39 eV in the spectrum of InAs/GaAs sample contacted to the MBE buffers can be different from the above-discussed for metamorphic InAs/InGaAs sample. In our opinion, it is ...
9
Nano structure fabrication of GaAs using AFM tip induced local oxidation method: different doping types and plane orientations
... on GaAs substrates that are doped in different conductivity types of p- and n-types and plane orientations of GaAs(100) and GaAs(711), respectively, using an atomic force microscopy (AFM) tip-induced ...
9
Performance assessment of multijunction solar cells incorporating GaInNAsSb
... GaInP/ GaAs/GaInNAs triple-junction SCs operated at a concen- tration of 300 times have up to 3- to 6-percentage point higher efficiencies than GaInP/GaAs/Ge ...
7
Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... theoretically relaxes back to its own lattice constant. This is ideally how using GaP for strain balancing should work. One can see by looking at the left (under balanced) or the right (over balanced), how too little or ...
162
Defect engineering of InP and InGaAs for optoelectronic applications
... When the conditions for dominant group V interdiffusion were created, as in the case for Si02 or undoped SOG treatment of the InGaAs capped quantum wells where a great deal of compressiv[r] ...
229
Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
... Self-assembled quantum dots (QDs) have been intensively studied over the past decades in both fundamental and application fields. To date, several systems have exhibited great optical properties and find their ...
5