multicrystalline Si
Low temperature gettering in multicrystalline silicon materials for photovoltaics
... a multicrystalline silicon sample revealed by a Sopori ...a multicrystalline silicon sample used in this thesis under a magnification of (a) 97x (b) ...a multicrystalline silicon sample (39 mm 39 ...
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Hierarchy of Grain Boundary Impurity Gettering and Passivation in Photovoltaic Multicrystalline Silicon.
... This thesis examines grain boundaries, dislocations and metallic impurities in photovoltaic multicrystalline silicon (PV mc-Si). The interaction dynamics between hierarchy of grain boundaries (GBs), nickel, ...
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Temperature Effects on the Electrical Performance of Large Area Multicrystalline Silicon Solar Cells Using the Current Shunt Measuring Technique
... It is known that photovoltaic devices such as solar cells generate electrical current when photons with sufficient energy penetrate the semiconductor and excite electrons into the conduction band [1]. However, due to the ...
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The Effect of Global Solar Irradiance on the Electrical Parameters of Multicrystalline Silicon Solar Cell
... multicrystalline silicon solar cell from morning to evening for 10 days in the month of November, 2013 and analysing all the datas we obtained some results which are given in above tables and corresponding five ...
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Carrier Recombination in Multicrystalline Silicon: A Study using Photoluminescence Imaging
... doped multicrystalline silicon wafers with different contamination levels, and investigate their response to phosphorus gettering and hydrogenation, aiming to obtain a better understanding of the origin of the ...
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Passivation effects on low temperature gettering in multicrystalline silicon
... as-grown multicrystalline silicon ...passivated multicrystalline silicon, and lifetime and interstitial iron concentrations are monitored at each processing ...
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Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer
... throughout the PS layers and to getter eventual metal impurities towards the phosphorus-doped PS layer. The effect of this gettering procedure was investigated by means of internal quantum efficiency and the dark current ...
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Hydrogenation effect on low temperature internal gettering in multicrystalline silicon
... Multicrystalline silicon (mc-Si) wafers contain a large number of structural crystallographic defects, such grain boundaries, dislocations and precipitates of light elements such as oxygen. They also ...
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Recombination and Trapping in Multicrystalline Silicon Solar Cells
... Multicrystalline silicon is often plagued by trapping effects, which can make lifetime measurement in the injection-level range of interest very difficult, and sometimes impossible. An old model based on centres ...
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Increasing minority carrier lifetime in as grown multicrystalline silicon by low temperature internal gettering
... lifetime and interstitial iron distributions in as-grown multicrystalline silicon (mc-Si) from different ingot height positions. Samples are characterised in terms of dislocation density, and lifetime and ...
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High efficiency multicrystalline silicon solar cells
... The recombination at an aluminium back surface field is typically high. Attempts to produce 20% efficient single crystal silicon solar cells relied on thick heavily doped substrates to minimise the effects of rear ...
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Combining low temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon
... Those who have used low-temperature annealing in cell pro- duction typically find improvements at higher temperatures than us. Pickett and Buonassisi found cell efficiency improvements to arise in mc-Si grown from ...
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Photocatalytic activity of Cr doped TiO2 nanoparticles deposited on porous multicrystalline silicon films
... Table 1 shows the evolution of the effective diffusion length ( L ) of the mc-Si with Cr concentration. We found that the greater L is associated to a low value of Cr concentration (2 at. %). This is consistent ...
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Low temperature saw damage gettering to improve minority carrier lifetime in multicrystalline silicon
... Discussion: Figure 2 shows a clear difference between sister samples annealed with or without saw damage. The lifetime in samples annealed without saw damage got considerably worse at 500 to 700 C, with a substantial ...
5
The Defining Positive Role of High Cell Temperature on the Efficiency of a Multicrystalline Solar Photovoltaic Array
... As per the Photovoltaics Report, prepared by Fraunhofer institute for Solar Energy Systems, the record lab efficiency for monocrystalline and multicrystalline silicon cell are 26.7% and 22.3% respectively. For the ...
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Liquid phase epitaxy of silicon for thin film silicon solar cells
... Abstract In this work, thin crystalline silicon films have been grown by liquid phase epitaxy LPE on single crystal and multicrystalline silicon substrates, with the aim of evaluating an[r] ...
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Micro-crack detection of multicrystalline solar cells featuring an improved anisotropic diffusion filter and image segmentation technique
... The increasing demand for solar electrical energy has multiplied the need for photovoltaic (PV) arrays. As the major component of the PV array, the demand for solar cells has also increased. This demand has translated ...
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Defect and Impurity Distributions in Traditionally Cast Multicrystalline and Cast Monocrystalline Silicon for Solar Substrates
... An examination of two types of cast silicon was performed to correlate observed electrical properties with structural defects and chemical impurities. Results show that many of the significant impurities and defects ...
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Electronic states at the interface of Ti-Si oxide on Si(100)
... All of the studied structures are grown on 25 mm n-type silicon wafers oriented 共 100 兲 and doped to 4 ⫻ 10 16 donors per cm 2 . Prior to loading into UHV, wafers are cleaned using a JT Baker 100 chemical dip for 15 min ...
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Electronic Defect Characterization of Strained-Si/SiGe/Si Heterostructure
... However, there are limited works concerning the effects of the high-density acceptor-like dislocation-related defects on the capacitance-voltage (C-V) characteristics of electrical devices of the ...
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