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Optoelectronic Applications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

... for optoelectronic applications due to their high refractive indexes, photo-sensitivity, high electrical conductivity, strong adsorption and transport properties[1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, ...

24

A bifunctional smart material: the synthesis of a metal-free black pigment for optoelectronic applications from an organic semiconducting molecular rod

A bifunctional smart material: the synthesis of a metal-free black pigment for optoelectronic applications from an organic semiconducting molecular rod

... There is a growing interest in black dyes and pigments, due to their varied optoelectronic applications from colorants to dye-sensitised solar cells (Grätzel, 2003; Grätzel, 2004). There are few ...

17

Epsilon near zero metamaterials for optoelectronic applications

Epsilon near zero metamaterials for optoelectronic applications

... the transmission in specific directions. The other type ENZ condition, i.e. IENZ, is achieved by transparent conductive oxides (TCOs)[26], such as Al-doped zinc oxide (AZO), indium tin oxide (ITO) and gallium zinc oxide ...

180

Synthesis Sol Gel Derived Highly Transparent ZnO Thin Films for Optoelectronic Applications

Synthesis Sol Gel Derived Highly Transparent ZnO Thin Films for Optoelectronic Applications

... these applications re- quire stable and time controllable electrical parameters of zinc oxide thin films, possibly achieved without any post- growth treatment of the deposited ZnO layers ...

6

Growth and Characterization of L-Proline Doped Adp Crystals for Optoelectronic Applications

Growth and Characterization of L-Proline Doped Adp Crystals for Optoelectronic Applications

... The linear optical properties of L-Proline doped ADP crystals are examined by subjecting the materials to UV-Visible spectral analysis. The spectrum was traced between the wavelength ranges of 190 nm to 1100 nm. It was ...

6

Investigation of a New Waveguide Structure Based on Negative Index Material for Optoelectronic Applications

Investigation of a New Waveguide Structure Based on Negative Index Material for Optoelectronic Applications

... In this work, a waveguide structure consisting of a new artificial negative in- dex material (NIM) surrounded by a nonlinear cover and a ferrite (YIG) sub- strate has been designed and investigated. We apply the boundary ...

10

Spectroscopic Properties of Eu3+ Ions Doped Boro-phosphate Glasses for Optoelectronic Applications

Spectroscopic Properties of Eu3+ Ions Doped Boro-phosphate Glasses for Optoelectronic Applications

... For the past few decades considerable work on rare earth (RE) doped materials have been carried out for the design and development of efficient optoelectronic devices such as solid state lasers, LED’s and color ...

5

High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications

High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications

... Three-dimensional topological insulators (3DTIs) exhibit a feature of gapless surface states inside the bulk bandgap, promising potential applications in spintronics, quantum computation, and thermoelectrics. 1 To ...

6

A Study of the Optical and Electrical Properties of Conjugated Polymers for Use in Optoelectronic Applications

A Study of the Optical and Electrical Properties of Conjugated Polymers for Use in Optoelectronic Applications

... Practical applications based on polymer are limited by their poor stability under normal ambient conditions, especially as these materials are sensitive to light and ...

122

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

... Recently, Camacho et al. [15] demonstrated an electrically pumped Ge laser using a slightly tensely strained (0.25%) active layer which was heavily P doped (7x10 19 cm -3 ). The lasing threshold is, however, very high, ...

19

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

... Recently, Camacho et al. [15] demonstrated an electrically pumped Ge laser using a slightly tensely strained (0.25%) active layer which was heavily P doped (7x10 19 cm -3 ). The lasing threshold is, however, very high, ...

19

Correlation between Coating Adhesion and Damage Threshold: Simple Method of Reliability Assessment for Optoelectronic Applications

Correlation between Coating Adhesion and Damage Threshold: Simple Method of Reliability Assessment for Optoelectronic Applications

... water test combined with the optical aging under high-power laser irradiation, we show that an optical coating that survives the 1-h boiling water test withstands the damage threshold, ensuring the field service life ...

6

Sol – Gel Spin Coated Cadmium Sulphide ‎Thin Films on Silicon (1 0 0) Substrates for ‎Optoelectronic Applications

Sol – Gel Spin Coated Cadmium Sulphide ‎Thin Films on Silicon (1 0 0) Substrates for ‎Optoelectronic Applications

... Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. In this work CdS thin films were ...

9

Structural, optical and electrical properties of ZnO: Al thin films synthesized by low cost spray pyrolysis for optoelectronic applications

Structural, optical and electrical properties of ZnO: Al thin films synthesized by low cost spray pyrolysis for optoelectronic applications

... for optoelectronic devices, for instance as window layers in solar ...blue optoelectronic devices such as light-emitting diodes LEDs and laser diodes ...

8

New Synthetic Methodologies Directed toward Pharmacologically Active Compounds as well as Silole Based Chromophores for Analytical and Optoelectronic Applications

New Synthetic Methodologies Directed toward Pharmacologically Active Compounds as well as Silole Based Chromophores for Analytical and Optoelectronic Applications

... This chapter describes the work done in our research group towards the development of silole-based materials for applications in biological sensors and photoelectronic devices. In addition to a short introduction ...

292

Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications

Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications

... Bandgap tunability of InGaAs/InGaP nanowire core-shell heterostructures 7.3.1 Morphology and structural properties of WZ InGaAs/InGaP coreshell heterostructures Figure 7.1 a-d shows the [r] ...

182

Effect of Precursor Solvents on the Optical Properties of Copper Oxide Thin Films Deposited Using Spray Pyrolysis for Optoelectronic Applications

Effect of Precursor Solvents on the Optical Properties of Copper Oxide Thin Films Deposited Using Spray Pyrolysis for Optoelectronic Applications

... Well adherent and transparent dark brown copper oxide thin films have been deposited on glass using alcohol and distilled water as solvents. Rutherford backscattering analysis revealed the aqueous films to be thicker ...

11

Defect engineering of InP and InGaAs for optoelectronic applications

Defect engineering of InP and InGaAs for optoelectronic applications

... When the conditions for dominant group V interdiffusion were created, as in the case for Si02 or undoped SOG treatment of the InGaAs capped quantum wells where a great deal of compressiv[r] ...

229

III-V nitrides for electronic and optoelectronic applications

III-V nitrides for electronic and optoelectronic applications

... Films of GaN have been grown from the vapor phase by several techniques includ- ing low and high pressure CVD, plasma-enhanced CVD, reactive ionized-cluster beam d[r] ...

11

Growth and characterisation of (In)GaAsN alloys for optoelectronic applications

Growth and characterisation of (In)GaAsN alloys for optoelectronic applications

... Improvement of the PL intensity, blueshift of the PL peak wavelength and narrowing of the spectral linewidth after RTA have been reported in these studies.10-12 These effects have been g[r] ...

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