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p-n junction

Electrochemical Preparation of Bilayer p-n Junction of n-CdS / p-P3HT

Electrochemical Preparation of Bilayer p-n Junction of n-CdS / p-P3HT

... Organic-inorganic p-n junction composed of electrically conducting poly(3-hexylthiophene) (P3HT) and cadmium sulphide (CdS) was prepared by electrodeposition of P3HT on ITO prior to CdS on P3HT by ...

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EMF of Hot Charge Carriers Arising at the p n Junction under the Influence of the Microwave Field and Light

EMF of Hot Charge Carriers Arising at the p n Junction under the Influence of the Microwave Field and Light

... of p-n-junction based on the account of generation-recom- bination processes in space-charge ...illuminated p-n- junction were pre-measured without the influence of the microwave ...

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Influence of Deformation on CVC p n Junction in a Strong Microwave Field

Influence of Deformation on CVC p n Junction in a Strong Microwave Field

... silicon p-n-junctions in strong microwave ...on p-n- junction theoretically described experimentally observed effect of occurrence of negative differential resistance mode and switch to ...

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Preparation of improved p n junction NiO/TiO2 nanotubes for solar energy driven light photocatalysis

Preparation of improved p n junction NiO/TiO2 nanotubes for solar energy driven light photocatalysis

... in p-NiO region and n-TiO 2 region, respectively. When the p-n junction is irradiated by photons, the photogenerated holes flow to valence band of NiO nanoparticles (negative field), ...

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Quantum Mechanical Properties of a Nano-Scale p-n Junction Based on Si/Si0.4Ge0.6/Si Quantum Well

Quantum Mechanical Properties of a Nano-Scale p-n Junction Based on Si/Si0.4Ge0.6/Si Quantum Well

... nano-scale p-n junction based on Si/Si ...the junction has also been calculated for the heterostructure for different applied reverse bias ...

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Characterization of p-SnO2:Al /n-ZnO:Al p-n junction deposited by spray pyrolysis technique for led applications

Characterization of p-SnO2:Al /n-ZnO:Al p-n junction deposited by spray pyrolysis technique for led applications

... For n-ZnO: Al, deposition was done at a temperature of 400 o C, carrier gas pressure of ...The p-n junction of p-SnO 2 :Al and n-ZnO:Al that was ...

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Optical Characterization of SnxSey /SnO2: Co P-N Junction Deposited by Spray Pyrolysis for Photovoltaic Application

Optical Characterization of SnxSey /SnO2: Co P-N Junction Deposited by Spray Pyrolysis for Photovoltaic Application

... method. SnSe thin films indicate semiconductors behavior with p-type conductivity. It has also a superior optical transmission in the range of 0.5-20 μm capable of improving conductivity and increasing current ...

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The Effect of Light on the CVC of Strained p n Junction in a Strong Microwave Field

The Effect of Light on the CVC of Strained p n Junction in a Strong Microwave Field

... For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current ...

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Spin-orbit interaction and snake states in a graphene p-n junction

Spin-orbit interaction and snake states in a graphene p-n junction

... a p-n junction in single-layer graphene in the presence of a perpendicular magnetic field and spin-orbit ...graphene p-n junction in the presence of strong spin-orbit interaction ...

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Characterization of SnxSey /SnO2: Co p-n junction deposited by spray pyrolysis for photovoltaic application

Characterization of SnxSey /SnO2: Co p-n junction deposited by spray pyrolysis for photovoltaic application

... a p type semiconductor with a direct band gap and high absorption in the visible region ...a p-n junction is yet to be ...-Co p-n junction have been ...

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Effects of substrate temperature of window layer on the performance of SnxSey/ZnO:A1 P-N junction solar cell

Effects of substrate temperature of window layer on the performance of SnxSey/ZnO:A1 P-N junction solar cell

... Various elements and compounds have been studied to fabricate thin film semiconductors for the solar cell applications. Apart from the materials used in the cell fabrication, the performance of solar cell also depends on ...

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Diagnostics of Possibility to Increase Prediction of Dynamic of Charge Carriers in A P N Junction with Optimized Distributions of Dopants

Diagnostics of Possibility to Increase Prediction of Dynamic of Charge Carriers in A P N Junction with Optimized Distributions of Dopants

... Manufacturing of new types of microelectronic devices and optimization of old devices are the basis of manufacturing of new integrated circuits [1-5]. For the both cases it is necessary to analyze physical processes ...

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Realization of radial p n junction silicon nanowire solar cell based on low temperature and shallow phosphorus doping

Realization of radial p n junction silicon nanowire solar cell based on low temperature and shallow phosphorus doping

... radial p-n junction structures on SiNW arrays fabricated by MACE technique using traditional high-temperature diffusion ...radial p-n junction and reduce the carrier ...

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Characterization of cdxse1-xs/pbs thin films deposited by chemical bath deposition for p-n junction solar cell application

Characterization of cdxse1-xs/pbs thin films deposited by chemical bath deposition for p-n junction solar cell application

... nanotechnology, it has been proven that cheap optoelectronic devices can be designed and fabricated for domestic and commercial electrical production (Piok et al., 2001). Nault (2005) found that heating from solar energy ...

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Effect of disorder on a graphene p n junction

Effect of disorder on a graphene p n junction

... graphene p-n junction, in which the gradient of the carrier density is controlled by the gate ...the junction resistance is dominated by either diffusive or ballistic ...

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Influence of Adsorption of Dopant on Distribution of the Dopant in A P N Junction

Influence of Adsorption of Dopant on Distribution of the Dopant in A P N Junction

... The considered epitaxial layer and substrate are manu- factured by using different materials. Lattice spacings of the materials are different from each other. In this situation one can find mismatch-induced strain. In ...

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Effect of Various Radiations on the Working of P-N Junction Diode

Effect of Various Radiations on the Working of P-N Junction Diode

... including p-n junction, p-i-n and Schottky ...(10"l-1012) n/cm2 1 MeV equivalent fluence ...more p-n ...

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One sided rectifying p n junction diodes fabricated from n CdS and p ZnTe:Te semiconductors

One sided rectifying p n junction diodes fabricated from n CdS and p ZnTe:Te semiconductors

... factor, n = ...abrupt p-n rectifying diode. The fabrication of one- sided abrupt p-n junction diode have been extensively studied using III-V compound semiconductors such as ...

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Characterization of Pure Cuo and Sn Doped Cuo Thin Films Via JNSP Technique For P-N Junction Diode Application

Characterization of Pure Cuo and Sn Doped Cuo Thin Films Via JNSP Technique For P-N Junction Diode Application

... and p-SnCuO/n-Si diodes were prepared for different doping concentration of Sn from 0 to 12 ...of p-SnCuO/n-Si diodes in darkness and under light illumination, n and  b values were ...

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"Leakage Current Reduction Causes Due to Sub-Threshold Conduction in Parasitic p-n Junction"

"Leakage Current Reduction Causes Due to Sub-Threshold Conduction in Parasitic p-n Junction"

... The MOSFET is based on the original field-effect transistor introduced in the 70s. Figure 1.1 shows the device schematic for a MOSFET. The invention of the power MOSFET was partially driven by the restrictions of bipolar ...

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