plasma-assisted molecular beam
Analysis of AlGaN/GaN high electron mobility transistors with nonalloyed Ohmic contacts achieved by selective area growth using plasma assisted molecular beam epitaxy
... Abstract: - We achieved low-resistance nonalloyed Ohmic contacts for n-type GaN using selective area growth (SAG) by plasma assisted molecular beam epitaxy (PAMBE). Thus-fabricated high ...
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InN nanorods prepared with CrN nanoislands by plasma assisted molecular beam epitaxy
... The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma- assisted molecular beam epitaxy under In-rich conditions. By inserting CrN ...
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Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution
... Abstract: The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed ...
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Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy
... Plasma-assisted molecular beam epitaxy 共PA-MBE兲 of- fers several advantages over other epitaxial growth tech- niques including in situ control of the growth by high energy electron diffraction ...
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Increasing ZnO Growth Rate by Modifying Oxygen Plasma Conditions in Plasma Assisted Molecular Beam Epitaxy
... oxygen plasma condi- tions in plasma-assisted molecular beam ...the plasma source and the substrate affect the growth rate and the quality of the ZnO ...
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Ga Adlayer Coverage and Surface Morphology Evolution during GaN Growth by Plasma-assisted Molecular Beam Epitaxy
... Due to many favorable electronic properties such as high critical breakdown field and high saturation electron velocity, GaN has become a very promising candidate material for high-frequency, high-power, and ...
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Growth and characterisation of dilute nitride antimonide layers by plasma assisted molecular beam epitaxy
... Reconstructions are reported as occurring under different fluxes and substrate temperatures. These are likely to arise from the measurement inconsistencies endemic in inter-laboratory comparison, as discussed in chapter ...
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Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma assisted molecular beam epitaxy
... more easily, which makes the Ga droplets lower density. For lower density Ga droplets on Si, we get lower density GaN nanodots after plasma nitridation. Secondly, we can also find the pre-nitridation treatment of ...
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Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy
... electron probe microanalysis (EPMA) using a Cameca SX100 and by combined Rutherford backscattering spectrometry (RBS) and particle-induced x-ray emission (PIXE) measurements using a 3.04 MeV 4 He ++ beam. The band ...
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Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
... nanostructures have been grown such as nanowires (NWs), nanotubes, and nanorods (NRs) by plasma- assisted molecular beam epitaxy (PAMBE) and metalor- ganic vapor phase epitaxy [11,12]. There ...
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Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi
... by plasma-assisted molecular beam epitaxy (PA-MBE) on (0001) c-plane sapphire ...gallium beam equivalent pressure (BEP) with all other MBE growth parameters kept ...
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Study of InN epitaxial films and nanorods grown on GaN template by RF MOMBE
... MOCVD, plasma-assisted molecular beam epitaxy (PA-MBE), and metalorganic vapor phase epitaxy are the widely used techniques in InN epitaxial ...
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Electrical Contacts on Silicon Nanowires Produced by Metal Assisted Etching: a Comparative Approach
... The techniques used to synthesize nanowires are many, and among all, our study refers to the combination supramolecular self-assembly of polystyrene nanospheres and metal-assisted chemical etching (MACE) [11, 12], ...
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Excitation of Ion Azimuthal Surface Modes in a Magnetized Plasma by Annular Flow of Light Ions
... ion beam is characterized by the following feature. The beam rotates in an external magnetic field in a gap between the plasma column and the metal ...the beam velocity is defined by an ...
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Biofunctionalization of UHMWPE polymer and its application in Anterior Cruciate Ligament reconstruction
... Ultra-high molecular weight polyethylene (UHMWPE) has been extensively used in medical implants, notably in the bearings of hip, knee, and other joint prostheses, owing to its biocompatibility and high wear ...
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A Nonlinear Study of Beam Plasma Amplification
... forces, and initial velocity modulation over a somewhat smaller range of values. The comparison between computed results and experimental results is only Dartially [r] ...
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Estimations of Beam-Beam Fusion Reaction Rates in the Deuterium Plasma Experiment on LHD
... deuterium plasma are investigated by the Global NEoclassical Transport (GNET) code, which can solve the five-dimensional drift kinetic equation using Monte Carlo ...the beam-beam contribution is ...
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Fabrication and Photoluminescence Study of Large Area Ordered and Size Controlled GeSi Multi quantum well Nanopillar Arrays
... Ten periods of Ge (0.9 nm)/Si (12 nm) multi-quantum- well (MQW) samples were grown by a molecular-beam epitaxy (MBE) system (Riber EVA-32 ) on p-type Si wa- fers (<100> oriented, 0.01–0.02 Ω cm). The ...
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Epitaxy of Polar Oxides and Semiconductors.
... The anomalous x-ray scattering experiment is accomplished in Bragg-Brentano geometry with a PANalytical Empyrean x-ray diffractometer. The Ni-filters were removed from the diffracted beam optics to ensure the ...
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Plasma Assisted Synthesis of Carbon Nanotubes
... of plasma transited from a so-called a-mode (60 W) to c-mode (100 W) as the input power was increased from 60 to 100 W in an atmospheric pressure radio frequency dis- charge (APRFD) reactor [54, ...II). ...
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