Poly-Si
Performance analysis of crystalline (poly Si) and thin film (a Si/c Si) photovoltaic systems
... From Figure-4, it can be clearly observed that the value of PR of the Poly-Si module is average above 1. This result was not possible because the maximum value of PR for crystalline silicone cell was 1 when ...
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Fabrication, characterization and simulation of Ω gate twin poly Si FinFET nonvolatile memory
... This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Ω -gate nanowires (NWs). Experimental results show that the NW device has ...
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Activation Behavior of SLS and ELC Poly-Si after Ion Shower Doping
... Abstract— Thermal activation was carried out using SLS (sequential lateral solidification) poly-Si or ELC (excimer laser crystallization) poly-Si after B + ion shower doping. Reverse ...
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Low temperature poly Si nanowire junctionless devices with gate all around TiN/Al2O3 stack structure using an implant free technique
... situ phosphorous-doped poly-Si material, the process flow and cost could be efficiently reduced. Owing to the GAA configuration and small volume of NW channels, the fabricated devices with heavily doped ...
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A single poly Si gate all around junctionless fin field effect transistor for use in one time programming nonvolatile memory
... single poly-Si ...single poly-Si JL- FinFET NVM reduces the leakage current, according to Moore’s law, significantly reducing the development time and fabrication ...
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Charge Storage Characteristics of Pi-Gate Poly-Si Nanowires TaN-Al2O3-Si3N4-SiO2-Si Flash Memory
... Moreover, poly-Si grain boundaries function barrier to hot electrons and the mean free path of accelerated electrons is limited by the poly-Si grain length (approximately 30 nm by ...the ...
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Formation of Poly Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films
... Polycrystalline silicon (poly-Si) thin film transistors (TFT’s) are used for driving elements of flat panel displays (FPDs) such as liquid crystal display, organic light emitting diode display [1] [2]. ...
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Improved off current and subthreshold slope in aggressively scaled poly Si TFTs with a single grain boundary in the channel
... When poly-Si TFTs are used in LCD applications, the minimum feature size is typically very large m and therefore a large number of grain boundaries (GBs) are present in the ...the poly-Si ...
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Stress Relaxation of Poly Si Film Formed by Excimer Laser Annealing
... The poly-Si film formed by excimer laser irradiation of a- Si film on glass or quartz substrates at low-energy density with multiple shots was ...the poly-Si film was examined. The tensile ...
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Metal silicide/poly Si Schottky diodes for uncooled microbolometers
... acteristics of the diodes studied at different tempera- tures demonstrate the rectification ratios varying from about 20 to about 100 when the temperature changes from 70°C to 22°C and exceeding 1,000 at 80 K. A bar- rier ...
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Low-temperature (less than 450 degrees), plasma-assisted deposition of poly-si thin films on SiO(2) and glass through interface engineering
... bulk Si films were analyzed for crystallinity using a combination of RHEED, x-ray diffraction ~ XRD ! , cross-sectional transmis- sion electron microscopy ~ XTEM ! and Raman ...be poly-Si for one set ...
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PP.50-59 A Drain Current Model for Symmetric Double-Gate Polysilicon Thin-Film Transistors
... single-gate poly-Si TFTs can‟t meet the needs of the future because of the short-channel ...of poly-Si TFTs which possess the potential advantages of excellent control of ...
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Surface Effect of Assembling Enzyme and Modulation of Surface Enzyme Activity with Electric Potential Stress
... on poly-Si, and silicon nitride on poly-Si) are used to evaluate the immobilization capability for the rhodamine B ...in poly-Si ...the poly-Si ...
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Crystallization of polycrystalline silicon thin film by excimer laser annealing
... Thin film transistors (TFTs) are well known devices utilizing thin film semiconductor. The TFTs are fabricated by forming a thin film semiconductor on a substrate and processing the thin film semiconductor (Ohtani, et ...
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Temperature dependence of electronic behaviors in quantum dimension junctionless thin film transistor
... The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS ...
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Flexible glass substrates with via holes for TFT backplanes
... Tsukiji*****, Yamanashi Univ., Japan, *E.H.C, Japan, **Nissin Electric, Japan, ***Sumitomo Bakelite, Japan, ****Shintokogio, Japan and *****Uniopt, Japan 77 TFTpl: poly-Si TFT Technologi[r] ...
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Multi-Poly-Silicon-Layer-Based Spot-Size Converter for Efficient Coupling Between Silicon Waveguide and Standard Single-Mode Fiber
... constants for even and odd supermodes with the height of the Poly-Si layer are shown in Fig. 9(a). The propagation constants for even and odd supermodes are calculated with the separation ð S Þ of 200 and ...
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Design and fabrication of silicon on silicon carbide substrates and power devices for space applications
... on Si/SiC electronics have concentrated on demonstrating MOSFET behaviour [13, 14] and the implementation of RF devices [15, ...a Si/SiC MOSFET at 300°C and hence its channel resistance was just 10% worse ...
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Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In Situ Heating TEM Observation
... crystallized poly-Si layer was closely related to an initial thickness of the Al layer from the cross-sectional microstructure observations of the wafer, and they have concluded that the initial thickness ...
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Universal Mobility-Field Curves For Electrons In Polysilicon Inversion Layer
... 0.45(MV/cm) the mobility value starts to decrease steeply .Hence , the significant decrease in mobility is thought to be caused by surface roughness scattering[7]. But in Poly-Si TFT, the effect by surface ...
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