Resistive Memory
Compliance free ZrO2/ZrO2 x /ZrO2 resistive memory with controllable interfacial multistate switching behaviour
... logarithmic I–V curve plots and linear fittings of the SET processes are presented. The I–V curve at HRS in inter- facial mode follows an Ohmic behaviour at low voltage with the addition of a quadratic term at higher ...
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Compliance Free ZrO2/ZrO2 − x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour
... logarithmic I–V curve plots and linear fittings of the SET processes are presented. The I–V curve at HRS in inter- facial mode follows an Ohmic behaviour at low voltage with the addition of a quadratic term at higher ...
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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface
... Figure 10 shows the dependence of average LRS with CC ranging from 0.1 to 500 μA for the S2 devices. The LRS decreased linearly with increasing CC. The observed control of LRS by the device operation current was ...
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Mathematical Modelling of Threshold Voltage based Resistive Memory
... In this paper we analyze the threshold model of memristor, this model exhibit good functionality from different perspectives. The Simulink results represented to show how the physical properties of device functions by ...
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Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation
... (set process), Au cations could migrate from the interface of the anodic Au electrode to connect the broken region from the top region of the conducting bridge via the reduction/crystallization process, enabling the ...
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Thermoelectric performance of Na doped GeSe
... other applications, such as optoelectronics,30,31 resistive memory cells,32 glass-forming materials for photonic devices with thin-film structures,33,34 photovoltaic applications,30 and r[r] ...
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Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films
... ZnO-based resistive memory devices were mea- sured by Agilent 4156C semiconductor parameter analyzer (Agilent Technologies, Santa Clara CA, USA), Agilent 8110A pulse pattern generator (Agilent Tech- ...
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Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory
... and memory switching in a V/SiO x /AlO y /p ++ Si resistive memory device by simply controlling compliance current limit ...bipolar memory switching is obtained, which is attributed to ...
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Resistive Switching in Transition Metal Oxides for Integrated Non-volatile Memory
... that resistive memory devices pass current in either direction when in the "on" (low resistance) state and can thereby give rise to unintended addressing of memory elements via indirect ...
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Self compliance improved resistive switching using Ir/TaOx /W cross point memory
... operated resistive switching behaviors with improved switch- ing cycle uniformity in a simple resistive memory stack of Ir/TaO x /W in cross-point architecture are ...
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Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross point memories
... memories. The LRSs decreased linearly with increase of the CCs from 1 nA to 50 μA, which is applicable for MLC op- eration. By changing CCs (1 nA to few microamperes), more than four orders of magnitude of the LRS is ...
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The Characteristics of Binary Spike Time Dependent Plasticity in HfO2 Based RRAM and Applications for Pattern Recognition
... access memory) has emerged as one of the most promising candidates for the electronic synaptic device application [7–10] due to its features such as non-volatility, simple MIM structure, low power consumption, ...
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Anisotropic Magnetoresistance of Nano conductive Filament in Co/HfO2/Pt Resistive Switching Memory
... [1–7]. Resistive Random Access Memory (RRAM), which has the advan- tages of high integration, low power consumption, high read-write speed, and compatibility with CMOS technol- ogy, is regarded as one of ...
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Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high Ge content Ge0 5Se0 5 solid electrolyte
... metal. On the other hand, the physical thickness of the switching material can be increased because of the re- activity of the Al, TiN, and W TEs during the deposition process. The leakage currents in all devices were ...
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Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration
... and also the large diameter (approximately 100 nm) of the Ge NWs (i.e., long conducting pathway). As a result, the resistive switching memory of this device with a MOS structure has a low current compliance ...
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Conductance Quantization in Resistive Random Access Memory
... access memory (MRAM) based on the giant or tunneling magnetoresist- ance effect [75–79] and phase change random access memory (PRAM) based on the reversible phase transitions between amorphous and ...
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TaOx based resistive switching memories: prospective and challenges
... density, scalability, low cost, low-energy operation, and high performance for potential applications. Today’s dominant memory technologies are DRAM and Flash, both have scaling issues. The DRAM offers very high ...
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Excellent resistive switching properties of atomic layer deposited Al2O3/HfO2/Al2O3 trilayer structures for non volatile memory applications
... the memory window is observed with slightly increasing LRS and ...the memory window exhibits better thermal sta- bility with the resistance ratio of LRS/HRS >10, indicating a better retention endurance ...
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Enhanced PentaMTJ Based Combinational and Sequential Circuits
... The unique properties of magnetic tunnel junction (MTJ) devices has led to the development of an advanced high performance non volatile magnet random access memory with density approaching that of dynamic random- ...
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Enhanced resistive switching phenomena using low positive voltage format and self compliance IrOx /GdOx /W cross point memories
... cross-point memory device exhibits Repeatable 100 cycles with small operating voltage of ±3 V, has a low-positive-voltage format, and has a self- compliance with a low current approximately 300 μA at a voltage of ...
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