Si/Ge
A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low Energy Irradiation
... the Si/Ge SL structure, the Si atoms are more resistant along the [111] direction, while the Ge atoms are more difficult to be displaced along the [110] ...the Ge recoils in the SL ...
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Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra Heavily B Doping
... and Si/GeB thin films with multilayer structures were prepared by using the ion-beam sputtering method, and their thermoelectric properties were evaluated and the effects of boron on Si/Ge superlattice ...
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Solid State Synthesis of Thermoelectric Materials in Mg Si Ge System
... unusual band structure or steep band edge near the Fermi energy is favorable for improvement of Seebeck coefficient. The complicated change in Seebeck coefficient with germa- nium content in Fig. 15, indicates the solid ...
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RETRACTED ARTICLE: Enhanced Emission of Quantum System in Si Ge Nanolayer Structure
... the Si-Ge layers structure, in which the rise of X valley in nanosilicon and L valley in nanogermanium forms the pumping levels, and the Γ valley of Ge direct-gap band or the localized state near ...
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Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2
... of Si, Ge, or SiGe alloy layers through masking techniques, which give superior dimensional control and process flexibil- ity, relative to wet etching ...
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Highly tunable hole quantum dots in Si Ge shell core nanowires
... In this thesis, 4.2K measurements of bias triangles in double quantum dots were shown. The single hole regime could not be reached due to a too high defect density in the wire. In this measurement setup, thermal noise is ...
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Ultra low thermal conductivities in large area Si Ge nanomeshes for thermoelectric applications
... ref. 77. Finally, the values of the Figure of Merit obtained for these nano-meshes were plotted in Fig. 4b (right axis). These values are up to ~0.08 at room temperature for the nano-meshes with the larger pore ...
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Computer Simulation of Precipitation Process in Si/Ge Amorphous Multi Layer Films: Effects of Cu Addition
... amorphous Si / Ge multi-layer fi lm, with and without Cu addition, by a molecular dynamics ...study: Si / Ge layers, Si / (Ge + Cu) layers, (Si + Cu) / (Ge + Cu) ...
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Device Parameter Optimization of Scaled Si Ge Hetrojunction Bipolar Transistor
... Average Ge concentration in this base region considered in our calculations is varied from 5%-30% as higher to this are not supported by present epitaxial technologies and beyond it the enhancement associated with ...
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Method of making active magnetic refrigerant materials based on Gd Si Ge alloys
... An alloy made of heat treated material represented by Gd5SixGe1−x4 where 0.47≦x≦0.56 that exhibits a magnetic entropy change −ΔSm of at least 16 J/kg K, a magnetostriction of at least 20[r] ...
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Micro raman investigation of si, ge and carbon related nanostructures
... Raman maps of the Ge-Ge peak position, linewidth and peak intensity of a-c sample.. The optical microscopy image of a the comer and b the edge of the bevelled.[r] ...
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Composition and strain in thin Si1 xGex virtual substrates measured by micro Raman spectroscopy and X ray diffraction
... in Si/Ge structures such as SiGe epitaxial layers, 8–14 Si/Ge superlattices, 15–18 and Ge/Si quantum wells and quantum ...the Ge content, x and strain, 共or r兲 can be ...
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Polarized Raman Spectroscopy of Multilayer Ge/Si(001) Quantum Dot Heterostructures
... the Ge-Ge peak in Ge quantum dots from the bulk value is mainly due to the three reasons: ( i ) a confinement effect, ( ii ) an intermixing effect, and ( iii ) stress within the ...the ...
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Theoretical Comparison of Band Spectra of Different Crystal Orientation of Ge and Si Nanowires
... of Ge – Ge, Si – Si, Ge – H and Si - H are ...of Si nanowires are greater than Ge nanowires in each case of ...circular Si nanowire has 1.95924 eV while ...
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Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
... include Ge as well as its al- loys and ...fabricate Ge-based semiconductor devices that include a Si substrate, a thicker buffer layer or sacrificial layer ...a Si/Ge buffer layer) is ...
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Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo emf spectra and terahertz conductivity
... undisturbed Si lattice (Figure ...the Si/Ge interface where point defects and a visible lattice dis- ordering immediately next to the cluster are registered (Figure 8b,c,e,f ...the Si lattice ...
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Germanium-on-Silicon Strain Engineered Materials for Improved Device Performance Grown by Chemical Vapor Deposition.
... a Si surface for temperatures up to 400 ⁰ C provides a large time window for initiating ...crystalline Si and Si/Ge alloys on Si substrates, in the temperature range of 425⁰C to ...
175
Analysis of Strain and Intermixing in a Single Layer Ge/Si dots using polarized Raman Spectroscopy
... constant depending on the experimental conditions. The va- lidity of this equation was initially checked for polarized Raman measurements in our experimental setup for a num- ber of thin SiGe layers with known Ge ...
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A first principles study of sub-monolayer Ge on Si(001)
... in Si(001), which has an identical structure, apart from the Ge in the top ...the Si-Si distance. The Ge dimers neighbouring the trench show an inward relaxation of ...down ...
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Epitaxial Ge Growth on Si(111) Covered with Ultrathin SiO2 Films
... The Ge layers grown on bare and oxidized Si(111) surfaces are characterized by the substantially different surface morphology caused by a difference in the lattice ...strong Si-Ge intermixing ...
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