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tunneling diodes

Voltage  and light controlled spin properties of a two dimensional hole gas in p type GaAs/AlAs resonant tunneling diodes

Voltage and light controlled spin properties of a two dimensional hole gas in p type GaAs/AlAs resonant tunneling diodes

... resonant tunneling diodes (RTDs) are interesting devices to study physical properties of 2D systems due to the fact that their carrier density and the resulting parameters, such as the filling factor can be ...

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Electronic properties of core shell nanowire resonant tunneling diodes

Electronic properties of core shell nanowire resonant tunneling diodes

... resonant tunneling diodes (RTDs) [1] and InGaAs/InP/InAlAs/InGaAs core-shell NW field effect transistors (FETs) [2] are attractive for the fabrication of emerging devices in view of the on- going ...

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Graphene hexagonal boron nitride resonant tunneling diodes as high frequency oscillators

Graphene hexagonal boron nitride resonant tunneling diodes as high frequency oscillators

... Here, we analyse how the device and circuit param- eters can be tuned to increase the operating frequency of graphene resonant tunneling diodes (GRTDs). Our model device, shown schematically in Fig. 1(a), ...

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Al-rich AlGaN/AlN-based double barrier resonant tunneling diodes

Al-rich AlGaN/AlN-based double barrier resonant tunneling diodes

... resonant tunneling in GaAs/AlAs resonant tunneling diodes 178 ...resonant tunneling current through the impurity-induced energy states agreed with a carrier transport model based on ...

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Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

... We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ioniza- tion and radiative ...

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Dependence of the electrical and optical properties on growth interruption in AlAs/In0 53Ga0 47As/InAs resonant tunneling diodes

Dependence of the electrical and optical properties on growth interruption in AlAs/In0 53Ga0 47As/InAs resonant tunneling diodes

... nant tunneling diodes [RTDs] have been considered as one of the promising candidates [1-3] for the compact and coherent solid-state THz source at room ...scanning tunneling microscopy or ...

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Circular polarization in n type resonant tunneling diodes with Si delta doping in the quantum well

Circular polarization in n type resonant tunneling diodes with Si delta doping in the quantum well

... In the last years, there was an increasing interest in spin effects in magnetic and non-magnetic resonant tunneling diodes (RTDs) [1-11]. For these devices, the spin character of injected and detected ...

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Generation and Shaping of Soliton Like Pulses along Resonant Tunneling Diodes NMOS Varactors Lattice

Generation and Shaping of Soliton Like Pulses along Resonant Tunneling Diodes NMOS Varactors Lattice

... [8] K. Narahara, “Nonlinear Waves in Transmission Lines Periodically Loaded with Tunneling Diodes,” In: A. Petrin, Ed., Wave Propagation in Materials for Modern Applications, INTECH, Croatia, 2010, pp. ...

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Influence of graphene oxide on metal insulator semiconductor tunneling diodes

Influence of graphene oxide on metal insulator semiconductor tunneling diodes

... thickness dependence, insulator composition also affects the IV characteristics of MIS devices. In this letter, we de- scribe the effect with graphene oxide introduced in the in- sulator layer in MIS tunneling ...

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Spin injection in n-type resonant tunneling diodes

Spin injection in n-type resonant tunneling diodes

... resonant tunneling diodes (RTDs) be- cause the spin polarization of carriers in the structure can be voltage-controlled which is very useful for device applications ...resonant tunneling diode ...

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Theoretical Study of Electronic Transmission in Resonant Tunneling Diodes Based on GaAs/AlGaAs Double Barriers under Bias Voltage

Theoretical Study of Electronic Transmission in Resonant Tunneling Diodes Based on GaAs/AlGaAs Double Barriers under Bias Voltage

... (RTD) are the most important design parameters to fabricate different devices, because they are the determinants of the resonance energies, and the peak-to-valley ratio (PVR) [6]-[14]. By adjusting both the thickness of ...

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A Model for Cu Se Resonant Tunneling Diodes Fabricated by Negative Template Assisted Electrodeposition Technique

A Model for Cu Se Resonant Tunneling Diodes Fabricated by Negative Template Assisted Electrodeposition Technique

... For nanoelectronics to become a reality one must be able to fabricate the devices and circuits at nanometer dimen- sions. For this, the researchers the world over have put in efforts in three different areas: ...

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Room temperature operation of GaSb based resonant tunneling diodes by prewell injection

Room temperature operation of GaSb based resonant tunneling diodes by prewell injection

... resonant tunneling structures (RTS) with unique and enhanced ...interband tunneling diodes (RITDs) for example exploit the broken bandgap alignment of GaSb and InAs, which  ...

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Nanothermometer based on resonant tunneling diodes : from cryogenic to room temperatures

Nanothermometer based on resonant tunneling diodes : from cryogenic to room temperatures

... (18) De Carvalho, H. B.; Brasil, M. J. S. P.; Lopez-Richard, V.; Galvao Gobato, Y.; Marques, G. E.; Camps, I.; Dacal, L. C. O.; Henini, M.; Eaves, L.; Hill, G. Electric-field inversion asymmetry :::::::::::::: ...

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Design of Broadband Non-Foster Circuits based on Resonant Tunneling Diodes

Design of Broadband Non-Foster Circuits based on Resonant Tunneling Diodes

... resonant tunneling diode is so because the transmission of electrons, and therefore current, depends on the alignment between the filled electron states in the emitter with the resonant quasi-confined allowed ...

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Calculation of Characteristics  of the Single Electron Transistor

Calculation of Characteristics of the Single Electron Transistor

... resonant tunneling Diodes based on GaAs/AlGaAs double barriers under bias voltage [10] with different model has obtained a similar transmission coefficient as function of incident ...

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Investigations of Nanoscale Variations in Spin and Charge Transport in Manganites and Organic Semiconductors Using Spin Polarized Scanning Tunneling Spectroscopy

Investigations of Nanoscale Variations in Spin and Charge Transport in Manganites and Organic Semiconductors Using Spin Polarized Scanning Tunneling Spectroscopy

... optical fiber with a polished lense to concentrate light into the fiber, purchased from Oz Optics (219 Westbrook Road, Ottawa, Ontario, Canada). The probe are mounted in a plate which extends from the STM head. Two such ...

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Macroscopic Quantum Tunneling

Macroscopic Quantum Tunneling

... In conclusions, the macroscopic quantum tunneling (MQT) for the BEC system or solitons system are possible. One possible mechanism of MQT orientates from the syn- chronous resonance between the NEF and the object ...

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Breakdown of counterflow superfluidity in a disordered quantum Hall bilayer

Breakdown of counterflow superfluidity in a disordered quantum Hall bilayer

... a tunneling exper- iment, we then slowly increase the counterflow current at the source and drain sites (1 and 2) to the final values ξˆ n · ∇ φ| 1 = ξ n ˆ · ∇ φ| 2 = I/I 0 ...

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A NOVICE APPROACH ON TRANSITION FROM IPV4-IPV6 USING TUNNELING AND PROTOCOLS OF TUNNELING

A NOVICE APPROACH ON TRANSITION FROM IPV4-IPV6 USING TUNNELING AND PROTOCOLS OF TUNNELING

... The IPv6 prefix 2002::/16 is reserved specifically for the 6to4 tunneling technology. Your 6to4 tunnel interface will use an address from this range. Built into the address is an encoding scheme that takes your ...

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