wide-band-gap films
Magnetotransport and lateral confinement in an InSe van der Waals heterostructure
... direct band-gap only in films with one or two layers[6,7], InSe has a direct-band gap over a wide range of layer ...indirect band gap semiconductor, it remains ...
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Investigations of Structure Property Relationships of Hybrids and Wide Band Gap Semiconductors.
... Polycrystalline Film Preparations. Polycrystalline films were prepared by the drop cast method. First, fluorine-doped tin oxide (FTO) glass was cleaned by sonication in deionized water, ethanol, and acetone for 30 ...
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Growth, characterization, and functionalization of wide band gap oxide alloys
... ZnO-based films act as free-electron trapping centres (double-Schottky barriers), strongly degrading the carrier transport properties along the potential barriers and the electrochemical stability ...
199
Optical Studies and Photovoltaic Performance of Nanocrystalline Titanium Dioxide Sensitized with Local Dye
... common wide band gap semiconductor that is used in many applications including pigments, protective coatings and thin film optical devices such as photovoltaics [1, ...a wide band ...
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Characterization of Aluminum Doped Zinc Oxide (Azo) Thin Films Prepared by Reactive Thermal Evaporation for Solar Cell Applications
... (ZnO) films have become technologically important due to their range of electrical and optical properties, together with their high chemical and mechanical stabilities, which make them suitable for a variety of ...
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Optical Characterization of SnxSey /SnO2: Co P-N Junction Deposited by Spray Pyrolysis for Photovoltaic Application
... wide band gap energy ...the band gap are transmitted through the thin films with very low absorption ...than band gap of the thin films which results in ...
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First principles study of structural and electronic properties of CdO
... has wide applications in solar cell [1], liquid crystal display [2] and gas sensor ...of wide band-gap compound semiconductor, has been highlighted in terms of being used as new type of ...
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Wide Band Gap SemiconductorOptical Waveguide
... thin films 7 and p-type ZnO substrates have been sold ...The band gap engineering of ZnO films has been studied by alloying ZnO with Mg and ...
187
Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0 2Ti0 8)O3 thin films
... Ferroelectric (FE) materials have recently attracted extensive attention as promising candidates for use in photo- voltaic devices and for coupling of light with other func- tional properties. 1–4 The immense interest in ...
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Spin Coated Tin Oxide Thin Film For Optical And Optoelectronic Material Applications
... semiconductor with wide energy band gap (3.7 eV) [6] The methodology employed for thin-film deposition ranges from very simple and cheap to complex and very expensive depending on the substrate type, ...
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APPLICATIONS OF CHEMICALLY SYNTHESIZED CUS: PBO ALLOYED THIN FILMS IN MULTILAYER SOLAR CELLS AND OPTOELECTRONICS
... thin films exhibited appreciable good transmittance from the ultraviolet region, through the visible to near infrared regions of electromagnetic ...energy band gap of ...thin films prepared ...
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Electro plating and characterisation of cadmium sulphide thin films using ammonium thiosulphate as the sulphur source
... thin films have a polycrystalline structure and these films transform from zinc blend cubic and hexagonal wurtzite mixed phases to a single hexagonal phase after heat treatment in air at 400 o ...energy ...
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STRUCTURE AND OPTICAL PROPERTIES OF CdSe THIN FILMS AS A FUNCTION OF THE ANNEALING TIME
... CdSe films at 273 K in air for different period of time (0-180) ...the films show an increasing absorbance in the visible regain. Films annealed for 180 minutes have higher absorption values as ...
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Influence of Annealing Temperature on Optical and Electrical Properties of Cu2ZnSnS4 (CZTS) thin Films Deposited by Sputtering Method from a Single Quaternary Target
... Transmittance, reflectance and absorbance data obtained from spectrophotometer (AVANTES AVASPEC-2048 UV-VIS-NIR) was used to determine optical properties such as absorption coefficient extinction coefficient, refractive ...
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Characterization of CuxNy AND CdO:Al thin films for solar cell applications
... Photovoltaic phenomena were discovered in 1839 by a French physicist called Becquerel (Green, 2002). The first solar cell was fabricated by Charles Fritts in 1894, when he coated the semiconductor selenium with an ...
79
Photoelectrochemical investigations of thermally formed films on titanium surfaces
... indirect band gap for rutile is 3 eV [24, ...oxide films are formed which develop slowly their thickness with ...ide films was investigated by ...
8
Influence of Thickness on the Electrical Transport Properties of Exfoliated Bi2Te3 Ultrathin Films
... prepared by means of mechanical exfoliation. The film thickness is manifested ranging from 10 to 200 nm by using scanning electron microscopy, atomic force mi- croscopy, and Raman spectroscopy, as well as its rela- tions ...
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Boron Monochalcogenides; Stable and Strong Two-Dimensional Wide Band-Gap Semiconductors
... 4 band structures of BX monolayers along high symmetry directions predicted by PBE method are ...are wide and indirect band gap ...valence band maximum (VBM) occurs around the Γ ...
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Ultra-Wide Bandwidth Microstrip Monopole Antenna by Using Electromagnetic Band-Gap Structures
... shows the property of a perfect magnetic conductor (PMC). The PMC material does not exist in nature, but an artificial magnetic conductor (AMC) can be realized from the property of the EBG structure [4]. In this paper, ...
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Study of the Optical properties and Optical Band gap for the coumarine – 102 / PMMA thin films
... allowed band gap was ...direct gap was calculated by plotting the relation (αhv) 2/3 with the photon energy (hv) as illustrated in ...of band gap were constant with different thickness ...
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