• No results found

zinc blende

THEORETICAL INVESTIGATION OF THE STRUCTURAL, ELECTRONIC, ELASTIC, AND OPTICAL PROPERTIES OF ZINC- BLENDE BeS UNDER HIGH PRESSURE

THEORETICAL INVESTIGATION OF THE STRUCTURAL, ELECTRONIC, ELASTIC, AND OPTICAL PROPERTIES OF ZINC- BLENDE BeS UNDER HIGH PRESSURE

... BeS is an interesting material with high hardness. It belongs to the beryllium chalcogenides family and crystallizes under normal conditions with the zinc-blende structure. Under high pressure, the ...

12

Raman study on zinc blende single InAs nanowire grown on Si (111) substrate

Raman study on zinc blende single InAs nanowire grown on Si (111) substrate

... Semiconductor nanowires (NWs) have been intensively studied in the last decade due to their novel physical pro- perties and potential applications in high-performance devices, such as field-effect transistors, lasers, ...

7

Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium  Arsenide (Zb GaAs)

Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb GaAs)

... We report accurate, calculated electronic, transport, and bulk properties of zinc blende gallium arsenide (GaAs). Our ab-initio, non-relativistic, self-con- sistent calculations employed a local density ...

16

Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy

Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy

... free-standing zinc-blende GaN as the epi-side for the substrate fabrication is possible unintentional arsenic contamination on this side of the zinc-blende GaN bulk ...of ...

5

Theoretical investigation of electronic and optical properties of zinc blende structure of beryllium sulphide, BeS

Theoretical investigation of electronic and optical properties of zinc blende structure of beryllium sulphide, BeS

... of zinc blende structure of BeS is presented by applying the full-potential linearized augmented plane wave (FP-LAPW) method within density- functional theory (DFT) as implemented in WIEN2k ...

5

Ab Initio Computations of Electronic,  Transport, and Structural Properties of zinc blende Beryllium Selenide (zb BeSe)

Ab Initio Computations of Electronic, Transport, and Structural Properties of zinc blende Beryllium Selenide (zb BeSe)

... We report results from several ab - initio computations of electronic, transport and bulk properties of zinc-blende beryllium selenide ( zb -BeSe). Our nonrela- tivistic calculations utilized a local ...

15

Photoelastic properties of zinc blende (AlGa)N in the UV: picosecond ultrasonic studies

Photoelastic properties of zinc blende (AlGa)N in the UV: picosecond ultrasonic studies

... We have used picosecond ultrasonics for studies of the optical properties of nitride epitaxial layers in the UV spectral range. We have studied zinc-blende (i.e., cubic) (AlGa)N alloys grown by MBE on (001) ...

8

Molecular beam epitaxy as a growth technique for achieving free standing zinc blende GaN and wurtzite AlxGa1 xN

Molecular beam epitaxy as a growth technique for achieving free standing zinc blende GaN and wurtzite AlxGa1 xN

... of zinc-blende phase GaN was observed in layers less than 10 µm ...thick zinc-blende GaN layer as a function of the distance from the GaN/GaAs interface using a ...thick ...

15

Growth of pure zinc blende GaAs(P) core–shell nanowires with highly regular morphology

Growth of pure zinc blende GaAs(P) core–shell nanowires with highly regular morphology

... For example, the NW tips with improper droplet consumption are commonly observed to have a high density of stacking faults.32 These defects extend to the shell and degrade its crystal qu[r] ...

6

Extended photoresponse and multi band luminescence of ZnO/ZnSe core/shell nanorods

Extended photoresponse and multi band luminescence of ZnO/ZnSe core/shell nanorods

... and zinc blende ZnSe for ZnO/ZnSe heterojunctions in the form of ZnO/ZnSe core/shell ...and zinc blende ZnSe shells were fabricated by pulsed laser deposition of ZnSe coatings on the surfaces ...

8

A Study by Ab Initio Calculation of Structural and Electronic Properties of Semiconductor Nanostructures Based on ZnSe

A Study by Ab Initio Calculation of Structural and Electronic Properties of Semiconductor Nanostructures Based on ZnSe

... Our ab-initio calculations are carried out in conditions of zero pressure and tempera- ture 0 K. The volume optimization was performed using the experimental value of the lattice constant of which is 5.667 (Å) for ...

13

Probability of twin formation on self catalyzed GaAs nanowires on Si substrate

Probability of twin formation on self catalyzed GaAs nanowires on Si substrate

... TEM images of GaAs NWs are shown in Figure 1. In the case of low arsenic flux (5.0 × 10 − 6 Torr), wurtzite (WZ) structures are dominant as shown in Figure 1a. On the other hand, when the arsenic flux is high, Figure 1c ...

5

Shape and phase control of CdS nanocrystals using cationic surfactant in noninjection synthesis

Shape and phase control of CdS nanocrystals using cationic surfactant in noninjection synthesis

... reported zinc-blende CdS seed nanoparticles could be transformed to wurtzite nanorods through an Ostwald ripening process induced by Cl - and the surfactants OA and ...The zinc-blende ...

6

Optical and Structural Properties of Pure and Bio-ZnS Using Cucumis Sativus Leaf Extract

Optical and Structural Properties of Pure and Bio-ZnS Using Cucumis Sativus Leaf Extract

... XRD was used for analyzing the crystal information of biosynthesized ZnS nanoparticles. Figure 4 shows the wide angle X-ray diffraction pattern of Pure and Bio-ZnS nanoparticles using Cucumis sativus leaf extract. The ...

5

High-Mobility Toolkit for Quantum Dot Films

High-Mobility Toolkit for Quantum Dot Films

... and zinc blende CdSe dots with ...and zinc blende CdSe dots the total number of atoms is the same (275) and the number of anions and cations in each is almost identical (140 vs ...for ...

28

Comparative Analysis of Nitrides Band Structures Calculated by the Empirical Pseudopotential Method

Comparative Analysis of Nitrides Band Structures Calculated by the Empirical Pseudopotential Method

... of zinc blende and wurtzite GaN and InN are calculated using the empirical pseudopotential method, with the form factors adjusted to reproduce correctly the most important band ...

15

Study of electronic and optical properties of aluminium pnictides (AlX, X = P, As, Sb)

Study of electronic and optical properties of aluminium pnictides (AlX, X = P, As, Sb)

... of zinc blende structure of aluminium pnictides is presented by applying the full- potential linearized augmented plane wave (FP-LAPW) method within density-functional theory (DFT) as implemented in WIEN2k ...

5

Formation mechanisms for the dominant kinks with different angles in InP nanowires

Formation mechanisms for the dominant kinks with different angles in InP nanowires

... induced and resulted to releasing the stress. It is as well noted that an approximately 110° kink consisted of suc- cessive curves is observed in Figure 2e. Noticeable con- trast variations indicated by white arrows in ...

7

Elastic Properties of Rock-salt Structured Transition
Metal Carbides

Elastic Properties of Rock-salt Structured Transition Metal Carbides

... Where e- electronic charge, m-mass of an electron and the Plasmon energy is explained as-   p  28 . 8 Z  W (3) Where Z-the effective no. of electron taking part in plasma oscillation, σ is the density and W- the ...

9

Estimation of Lattice Constants and Band Gaps of Group-III Nitrides Using Local and Semi Local Functionals

Estimation of Lattice Constants and Band Gaps of Group-III Nitrides Using Local and Semi Local Functionals

... and Zinc blende structures using various semilocal exchange correlation functional in generalized gradient approximations (GGA) namely PBE, WC, PBEsol in addition to local density approximation (LDA) ...

7

Show all 4334 documents...

Related subjects