• No results found

[PDF] Top 20 Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

Has 10000 "Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method" found on our website. Below are the top 20 most common "Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method".

Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

... shows properties of the GeBi films with vari- ous Bi contents in far-infrared wave ...for GeBi films in the 4–15-μm wave band, see ...of GeBi films from ...Ge films ... See full document

8

Preparation and Characterization of Al-doped Zinc Oxide Films deposited by Ion-beam-Assisted Molecular Beam Epitaxy (MBE) and It's Dye Sensitized Solar Cell (DSSC) Application

Preparation and Characterization of Al-doped Zinc Oxide Films deposited by Ion-beam-Assisted Molecular Beam Epitaxy (MBE) and It's Dye Sensitized Solar Cell (DSSC) Application

... (ion beam assisted molecular beam epitaxy) is one of important skill to obtain the development of a low temperature ...ion beam energy, ion beam types and so ...material ... See full document

15

Low phonon energy Nd:LaF3 channel waveguide lasers fabricated by molecular beam epitaxy

Low phonon energy Nd:LaF3 channel waveguide lasers fabricated by molecular beam epitaxy

... thin films grown by MBE on CaF substrates, finding similar spectroscopic properties to bulk materials and waveguide losses of around 1 dB/cm at ...thin films. The first method involves ion ... See full document

9

Electrical and Optical Properties of Au Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy

Electrical and Optical Properties of Au Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy

... by molecular beam epitaxy (MBE) growth are systematically studied through Au-assisted vapor-liquid-solid (VLS) ...film using scanning electron microscopy (SEM), transmission electron ... See full document

8

Some Properties of Group III Nitride Thin Films Directly Grown on Non Single Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

Some Properties of Group III Nitride Thin Films Directly Grown on Non Single Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

... (MOVPE) method on quartz glass substrate; however, the emission intensity from the LED was not always sufficient ...LEDs using a fused-silica glass substrate ... See full document

9

Effects of shutter transients in molecular beam epitaxy

Effects of shutter transients in molecular beam epitaxy

... Molecular beam epitaxy (MBE) is an ideal method to grow nano-structures. MBE allows for the controlled growth of films with sharp doping profiles and different chemi- cal compositions changing ... See full document

5

Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF MOMBE

Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF MOMBE

... InAlN films were grown on Si sub- strate using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE), although InAlN films often were grown by MOCVD and MBE ...MOCVD ... See full document

7

Structural and Optical Properties of Hydrothermally Grown Zns Thin Films

Structural and Optical Properties of Hydrothermally Grown Zns Thin Films

... and optical properties and extensively potential applications in various ...thin films have been produced using various techniques such as thermal evaporation [6], molecular beam ... See full document

5

Optical Properties of Sb Doped Ge Films Deposited on Silicon Substrate by Molecular Beam Epitaxy

Optical Properties of Sb Doped Ge Films Deposited on Silicon Substrate by Molecular Beam Epitaxy

... Ge films by using molecular beam epitaxy ...Ge films at low temperatures, eliminating the phenomenon of the large Sb-segregation in the Ge ... See full document

7

Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

... Group III-V semiconductors containing small amounts of bismuth (Bi), popularly known as ‘dilute bismide, ’ attracted great attention in the past decade. Bismuth is the largest and the heaviest group V element with its ... See full document

5

Study of Ho doped Bi2Te3 topological insulator thin films

Study of Ho doped Bi2Te3 topological insulator thin films

... on c-plane sapphire substrates using MBE. Prior to growth, cleaned 2 in.-diameter substrates were introduced into the main growth chamber with a base pressure of 5 10 11 Torr. The substrate temperature, determined ... See full document

6

The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy

The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy

... source under metal-rich growth conditions. A layer of molybdenum (Mo) was deposited on the back of the sapphire substrate by sputtering to assist substrate temperature measurement using an optical ... See full document

11

Investigation of Physical Properties of e-Beam Evaporated CdTe Thin Films for Photovoltaic Application

Investigation of Physical Properties of e-Beam Evaporated CdTe Thin Films for Photovoltaic Application

... CdS powder and CdTe granules of 99.99% purity (Merck) were used as source materials in electron beam evaporation technique. Indium thin oxide (ITO) disk supplied from Sigma-Aldrich was used as a target material ... See full document

5

Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties

Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties

... 0 < x < 0.023 using DLTS. We find that incorporating Bi suppresses the formation of GaAs-like electron traps, thus reducing the total trap concentration in dilute GaAsBi layers by over two orders of ... See full document

11

Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature

Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature

... thin films of ZnO have given rise to a great interest, as transparent conducting ...the optical and electrical properties of zinc oxide; it’s very high thermal and chemical stability, its ... See full document

6

Tailoring of polar and nonpolar ZnO planes on MgO (001) substrates through molecular beam epitaxy

Tailoring of polar and nonpolar ZnO planes on MgO (001) substrates through molecular beam epitaxy

... measured by atomic force microscopy evolved as a function of substrate temperature and was correlated with the grain sizes determined by XRD. Synchrotron-based X-ray absorption spectroscopy (XAS) was performed to study ... See full document

7

Molecular beam epitaxy in the lithium-niobium-oxygen system

Molecular beam epitaxy in the lithium-niobium-oxygen system

... Silver films were vacuum-deposited on the crystal of a quartz-crystal thickness monitor ( Intellemetrics , Model ...the beam and recording the mass gain during ... See full document

192

Enhancement of optical and electrical properties of zno thin films using indium doping

Enhancement of optical and electrical properties of zno thin films using indium doping

... The XRD profiles show that the crystalline quality of the ZnO films have deteriorated with indium doping. As the concentration of indium increases the intensity of 002 peak decreases and growth appeared in 100 and ... See full document

5

Self assembled growth of MnSi~1 7 nanowires with a single orientation and a large aspect ratio on Si(110) surfaces

Self assembled growth of MnSi~1 7 nanowires with a single orientation and a large aspect ratio on Si(110) surfaces

... mesh = 4.78 × 10 14 Mn atoms/cm 2 ) [3]. During depos- ition, the substrates were heated by radiation from a tung- sten filament located at the back of the sample holder. The temperature was set from 450°C to 600°C and ... See full document

8

Preparation, Characterization And Optical Properties Of Copper Oxide Thin Films

Preparation, Characterization And Optical Properties Of Copper Oxide Thin Films

... visible and infrared spectrum with values (1.21- 1.51eV) [7]. The Second type of copper oxide is cuprite or cuprous oxide [8], it is less stable than the first type and is a crystalline powder brown depending on the ... See full document

6

Show all 10000 documents...